本文選題：襯底溫度 + 硅量子點(diǎn)�。� 參考：《人工晶體學(xué)報(bào)》2016年08期

【摘要】：采用磁控共濺射沉積法,以Si靶和SiC靶為靶材,單晶Si(100)和石英為襯底,在不同襯底溫度下沉積了富硅SiC_x薄膜。在氮?dú)夥障掠?100℃退火,得到包含硅量子點(diǎn)的SiC_x薄膜。采用傅立葉變換紅外吸收光譜、拉曼光譜、掠入射X射線(xiàn)衍射和吸收譜對(duì)退火后的SiC_x薄膜進(jìn)行了表征。結(jié)果表明:當(dāng)襯底溫度從室溫(25℃)升至300℃時(shí),薄膜的晶化率增至71.3%,硅量子點(diǎn)尺寸增至8.9 nm,而光學(xué)帶隙則減至2.42 e ;隨著襯底溫度進(jìn)一步升高,薄膜的晶化率降至63.1%,硅量子點(diǎn)尺寸減小至7.3 nm,而光學(xué)帶隙卻增加至2.57 e ;當(dāng)襯底溫度從室溫(25℃)升至400℃時(shí),薄膜的吸收系數(shù)呈先增大后減小趨勢(shì)。在本實(shí)驗(yàn)條件下,最佳襯底溫度為300℃。
[Abstract]:Si-rich SiC_x thin films were deposited on Si target and SiC target by magnetron co-sputtering deposition on Si target and SiC target, single crystal Si-100) and quartz substrate. SiC_x thin films containing silicon quantum dots were obtained by annealing at 1100 鈩，

本文編號(hào)：1819596