本文選題：薄膜/基底結(jié)構(gòu)　切入點(diǎn)：屈曲脫粘　出處：《天津大學(xué)》2014年碩士論文

【摘要】：薄膜/基底結(jié)構(gòu)有效地實(shí)現(xiàn)了系統(tǒng)微型化和信息化,被廣泛地應(yīng)用在微電子、航天、生物、醫(yī)學(xué)等領(lǐng)域。在外載的作用下,膜/基結(jié)構(gòu)在工作過(guò)程中會(huì)出現(xiàn)薄膜斷裂、屈曲、脫粘等失效模式。膜/基結(jié)構(gòu)界面的破壞,會(huì)極大地影響結(jié)構(gòu)的在役性能。本文將結(jié)合實(shí)驗(yàn)與數(shù)值分析,基于屈曲脫粘對(duì)基底上沉積的納米薄膜的力學(xué)性能及界面性能進(jìn)行研究。原位觀察了薄膜/有機(jī)玻璃基底結(jié)構(gòu)在單軸壓縮加載下薄膜表面直線型屈曲的生成和擴(kuò)展過(guò)程,采用屈曲擴(kuò)展理論對(duì)實(shí)驗(yàn)現(xiàn)象進(jìn)行研究。在卸載過(guò)程中,觀察到了直線型屈曲模式轉(zhuǎn)化為電話線型屈曲,后轉(zhuǎn)化為泡狀屈曲。研究結(jié)果表明:直線型屈曲失穩(wěn)及模式轉(zhuǎn)化與薄膜殘余應(yīng)力、薄膜應(yīng)力釋放、薄膜和基底泊松比等因素相關(guān)。采用納米壓痕法研究了界面影響下泡狀屈曲的力學(xué)性能。通過(guò)對(duì)泡狀屈曲的原子力掃描結(jié)果與壓痕結(jié)果進(jìn)行對(duì)比分析,實(shí)現(xiàn)對(duì)泡狀屈曲高度的測(cè)量。對(duì)300nm和400nm厚度薄膜,測(cè)量和研究了泡狀結(jié)構(gòu)的彈性模量及剛度。研究表明:泡狀屈曲剛度隨高度的增加減小,隨厚度的增加而增加。界面的作用使得薄膜/基底結(jié)構(gòu)的彈性模量測(cè)試值更大,結(jié)構(gòu)剛度、承載效果更強(qiáng)。薄膜/基底結(jié)構(gòu)的界面粘接能是薄膜器件最重要的性能參數(shù)之一。本文基于界面對(duì)膜/基結(jié)構(gòu)的影響,提出了表征界面性能的理論模型。采用壓痕法分別在脫粘區(qū)域和粘接良好區(qū)域進(jìn)行壓痕�；诤暧^力學(xué)能量法,利用兩個(gè)區(qū)域等位移的塑性功差值來(lái)確定界面能量釋放率。根據(jù)硬度/彈性模量隨壓痕位移的變化情況,來(lái)確定脫粘臨界位移。采用內(nèi)聚力模型來(lái)描述薄膜基底間的粘接關(guān)系,通過(guò)有限元方法來(lái)模擬薄膜的屈曲脫粘及擴(kuò)展過(guò)程。研究界面參數(shù)對(duì)界面破壞行為的影響。通過(guò)對(duì)比實(shí)驗(yàn)和模擬中的界面脫粘長(zhǎng)度及壓痕曲線對(duì)實(shí)驗(yàn)測(cè)得的界面性能參數(shù)進(jìn)行驗(yàn)證、完善。
[Abstract]:The thin film / substrate structure has been widely used in the fields of microelectronics, spaceflight, biology, medicine and so on.Failure modes such as film fracture buckling and debonding will occur in the working process of the membrane / base structure under the action of external loading.The destruction of the membrane / substrate interface will greatly affect the in-service performance of the structure.In this paper, the mechanical properties and interfacial properties of nanocrystalline films deposited on substrates are studied based on buckling debonding and numerical analysis.In situ the formation and propagation of linear buckling of thin film / plexiglass substrate structure under uniaxial compression loading were observed. The experimental phenomena were studied by buckling propagation theory.During the unloading process, the linear buckling mode was observed to be transformed into telephone line buckling mode and later to bubble buckling mode.The results show that the linear buckling instability and mode transformation are related to the residual stress of the film, the release of the film stress, the Poisson's ratio of the film to the substrate, and so on.The mechanical properties of bubble buckling under the influence of interface were studied by nano indentation method.The height of bubble buckling is measured by comparing the results of atomic force scanning and indentation.The elastic modulus and stiffness of 300nm and 400nm thin films were measured and studied.The results show that the bubble buckling stiffness decreases with the increase of height and increases with the increase of thickness.The effect of interface makes the measured value of elastic modulus of thin film / substrate structure larger, the structure stiffness and bearing effect stronger.The interface bonding energy of thin film / substrate structure is one of the most important performance parameters of thin film device.Based on the influence of the interface on the structure of the film / substrate, a theoretical model is proposed to characterize the properties of the interface.Indentation method was used to indentation in debonding area and good bonding area respectively.Based on the macroscopic mechanical energy method, the plastic work difference between the two regions is used to determine the energy release rate of the interface.According to the change of hardness / elastic modulus with indentation displacement, the critical displacement of debonding is determined.The cohesive force model is used to describe the adhesion relationship between the film substrates and the buckling debonding and propagation process are simulated by finite element method.The influence of interface parameters on interface failure behavior is studied.The interface performance parameters are verified by comparing the interfacial debonding length and indentation curve in the experiment and simulation.
【學(xué)位授予單位】：天津大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：O484.2

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