本文選題：NiOx多晶薄膜　切入點(diǎn)：電阻開關(guān)特性　出處：《科學(xué)通報(bào)》2017年11期

【摘要】：利用射頻磁控濺射方法沉積制備了Ag/NiO_x/Pt存儲單元,研究了其微結(jié)構(gòu)、電阻開關(guān)特性隨測試溫度的變化.微結(jié)構(gòu)觀測分析發(fā)現(xiàn),沉積制備薄膜為富氧的NiO_x多晶薄膜.Ag/NiO_x/Pt存儲單元的電流-電壓測試曲線呈現(xiàn)閾值型電阻開關(guān)特性:分別在2.1~2.4 V的正偏壓范圍和-2~-2.2 V的負(fù)偏壓范圍內(nèi)觀測到了高低電阻態(tài)之間的穩(wěn)定可逆跳變.隨著測試溫度的升高,負(fù)偏壓范圍的電阻開關(guān)現(xiàn)象在140℃基本消失,而正偏壓范圍內(nèi)的電阻開關(guān)現(xiàn)象可維持到270℃.運(yùn)用指數(shù)定律擬合室溫電流-電壓曲線結(jié)果表明,薄膜隧穿電流屬于缺陷主導(dǎo)的空間限制電流;運(yùn)用Arrhenius作圖法擬合的電流-溫度曲線滿足線性關(guān)系,表明薄膜隧穿電流隨測試溫度的變化符合肖特基熱激發(fā)隧穿機(jī)制.在周期性電場作用下,從銀電極擴(kuò)散進(jìn)入薄膜內(nèi)的Ag離子的氧化還原反應(yīng)導(dǎo)致存儲單元呈現(xiàn)閾值型電阻開關(guān)特性.
[Abstract]:The Ag/NiO_x/Pt memory cells were deposited by RF magnetron sputtering. The microstructure and the change of the resistance switch characteristics with the measured temperature were studied.The microstructural observation analysis shows that,The current-voltage test curves of oxygen-enriched NiO_x polycrystalline films. Agr / nio / Pt memory cells showed threshold resistance switching characteristics: high and low voltages were observed in the positive bias range of 2.1V / 2.4V and the negative bias voltage range of -2V / 2.2V, respectively.Stable reversible jump between resistance states.With the increase of test temperature, the resistance switch phenomenon in the negative bias range basically disappears at 140 鈩，

本文編號：1682711