本文選題：磁控濺射　切入點(diǎn)：金屬摻雜　出處：《延邊大學(xué)》2017年碩士論文

【摘要】：Y_2O_3是一種稀土氧化物,其薄膜具有優(yōu)良的物理、化學(xué)性能,而且高溫抗氧化能力強(qiáng),可用作金剛石的抗氧化保護(hù)涂層。此外,Y_2O_3薄膜的透射率和介電常數(shù)較高,因此廣泛應(yīng)用于光電設(shè)備和半導(dǎo)體設(shè)備中。本文利用磁控濺射的方法在Si(100)襯底和玻璃襯底上制備了 Y_2O_3薄膜,并利用X射線衍射(XRD),掃描電子顯微鏡(SEM),能量色散X射線光譜(EDX)和紫外可見近紅外分光光度計分別對薄膜的結(jié)構(gòu),表面形貌,成分和光學(xué)特性進(jìn)行了研究。在最佳制備條件下,兩種襯底上生長的Y_2O_3薄膜都具有單斜相結(jié)構(gòu),但擇優(yōu)生長方向和結(jié)晶性存在一定差異。玻璃襯底上沉積的Y_2O_3薄膜,擇優(yōu)生長方向?yàn)?202),結(jié)晶性稍差;而Si襯底上沉積的Y_2O_3薄膜,擇優(yōu)生長方向?yàn)?111),結(jié)晶性良好,在退火后發(fā)生了由單斜相向立方相的結(jié)構(gòu)相變,且結(jié)晶性和化學(xué)計量都有明顯改善。利用磁控共濺射的方法制備了 Sn摻雜Y_2O_3(Sn:Y_2O_3)薄膜薄膜和V摻雜Y_2O_3(V:Y_2O_3)薄膜。在一定條件下Sn和V的摻雜都使Y_2O_3薄膜的結(jié)晶性得到改善;V摻雜后Y_2O_3薄膜的表面形貌由原來的片狀轉(zhuǎn)變?yōu)橹鶢?而且晶粒排布更加緊密,當(dāng)摻雜時間為15min時,薄膜中出現(xiàn)了立方相結(jié)構(gòu),這個發(fā)現(xiàn)對于提高玻璃襯底上的Y_2O_3薄膜的穩(wěn)定性具有重要的意義。Sn和V摻雜對Y_2O_3薄膜的光學(xué)特性也產(chǎn)生了一定影響,Sn摻雜后Y_2O_3薄膜近紅外區(qū)域內(nèi)的透射率增加,另外Sn和V的摻雜都使Y_2O_3薄膜的帶隙值明顯增加,經(jīng)計算Sn:Y_2O_3薄膜和V:Y_2O_3薄膜的帶隙變化范圍分別為4.94-5.06 eV和5.06-5.14 eV。
[Abstract]:Y_2O_3 is a rare earth oxide with excellent physical and chemical properties, strong oxidation resistance at high temperature, and can be used as a protective coating for diamond oxidation. In addition, the transmittance and dielectric constant of Y _ 2O _ 3 thin films are high. Therefore, it is widely used in optoelectronic and semiconductor devices. In this paper, Y_2O_3 thin films were prepared on Si Si 100 substrates and on glass substrates by magnetron sputtering. The structure, surface morphology, composition and optical properties of the thin films were studied by X-ray diffraction, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and UV-Vis near infrared spectrophotometer, respectively. The Y_2O_3 films grown on two kinds of substrates have monoclinic phase structure, but the preferred growth direction and crystallinity of Y_2O_3 thin films are different. The preferred growth direction of Y_2O_3 thin films on glass substrates is 2022, and the crystallinity of Y_2O_3 films on Si substrates is slightly poor. The preferred growth direction is 111g, and the crystallization is good. After annealing, the phase transition from monoclinic phase to cubic phase occurs. Both crystallization and stoichiometry have been improved obviously. Sn-doped YS _ 2O _ 3SnW _ Y _ 2O _ 3) thin films and V doped Y _ 2O _ 3 / V _ S _ I _ 2O _ 3) thin films have been prepared by magnetron co-sputtering. Under certain conditions, the crystallinity of Y_2O_3 thin films has been improved by Sn and V doping. The surface morphology of Y_2O_3 films was changed from flake to columnar. Moreover, the grain distribution is more compact. When the doping time is 15min, the cubic phase structure appears in the film. This finding has important significance for improving the stability of Y_2O_3 thin films on glass substrates. The optical properties of Y_2O_3 films are also affected by the doping of Sn and V, and the transmittance of Y_2O_3 thin films increases in the near infrared region after doping with Sn. In addition, the band gap values of Y_2O_3 thin films were obviously increased by doping Sn and V, and the band gap ranges of Sn:Y_2O_3 thin films and V:Y_2O_3 thin films were calculated to be 4.94-5.06 EV and 5.06-5.14 EV, respectively.
【學(xué)位授予單位】：延邊大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：O484

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