本文選題：MgNiO薄膜　切入點：磁控濺射　出處：《哈爾濱工業(yè)大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：近年來,由于紫外探測器可以應(yīng)用在火焰探測、導(dǎo)彈預(yù)警及制導(dǎo)、空間通信等領(lǐng)域而受到了極大的關(guān)注。Mgx Ni1-xO三元合金材料通過調(diào)節(jié)材料中Mg組分大小可以實現(xiàn)帶隙從3.6 eV-7.8 eV變化,可實現(xiàn)紫外區(qū)的應(yīng)用。目前,關(guān)于MgNiO紫外探測器的研究較少,且大部分研究集中于薄膜的生長。本研究采用磁控濺射的方法,從薄膜生長入手,研究MgNiO薄膜生長規(guī)律,對生長過程中出現(xiàn)的相分離和組分偏離進行詳細(xì)的分析,致力于薄膜質(zhì)量的提高以及MSM結(jié)構(gòu)的探測器件制備。本文的研究內(nèi)容主要包括:首先本文對石英襯底上磁控濺射生長MgNiO薄膜的進行了研究。詳細(xì)研究了濺射工藝參數(shù)對MgNiO薄膜性質(zhì)的影響,包括濺射功率、濺射壓強、氧氬比、退火溫度和MgO緩沖層。利用X射線衍射、掃描電子顯微鏡、紫外-可見光譜測試手段分析不同條件對MgNiO薄膜晶體性質(zhì)和光學(xué)性質(zhì)的影響。最終得到優(yōu)化濺射工藝參數(shù):濺射功率190 W、濺射壓強1.5 Pa、氧氬比15:25。發(fā)現(xiàn)退火溫度不宜超過700°C,以控制薄膜表面裂紋。初步得到了較優(yōu)的MgO緩沖層生長參數(shù):濺射功率150 W、濺射壓強0.5 Pa、氬氣流量40 sccm、濺射時間30 min。然后詳細(xì)地分析了相分離產(chǎn)生的原因,以及MgNiO薄膜中Mg組分偏離靶材Mg組分的原因。相分離的原因有:a)在較低的生長溫度下,Mg原子和O原子在襯底的遷移率要比Ni原子低,容易形成Mg團簇,造成局部區(qū)域的Mg元素含量升高;b)退火處理也會對晶體中的組分分布有影響。在退火過程中,間隙Mg原子在獲得足夠能量之后向Ni空位遷移;c)NiO的飽和蒸氣壓要比MgO高,退火過程中就會有更多的Ni蒸出,這是退火處理之后元素組分發(fā)生變化的主要原因。在濺射過程中,同一時間內(nèi)會有較多的Ni原子到達(dá)襯底使得薄膜的Ni組分要高于靶材。之后通過在Si襯底上MgNiO薄膜的生長,研究了不同緩沖層對MgNiO薄膜生長的影響。通過對Cu緩沖層和MgO緩沖層生長的MgNiO薄膜的性質(zhì)分析,發(fā)現(xiàn)MgO是比較合適的緩沖層。引入緩沖層后,生長的MgNiO薄膜只出現(xiàn)了(200)衍射峰。并且緩沖層極大的抑制了相分離現(xiàn)象,提高了MgNiO的結(jié)晶質(zhì)量。最后在部分晶體質(zhì)量比較好的樣品上通過光刻的方法制備插指電極,制備了MSM結(jié)構(gòu)的MgNiO基光電器件。在8 V偏壓下,入射光波長為289 nm下樣品的響應(yīng)度到最大值134.1μA/W。
[Abstract]:In recent years, because ultraviolet detectors can be used in flame detection, missile warning and guidance, Great attention has been paid to the field of space communication. Mg x Ni1-xO ternary alloy materials can change the band gap from 3.6 eV-7.8 EV to 3.6 eV-7.8 EV by adjusting the size of mg component in the material, and can realize the application of ultraviolet region. At present, there are few researches on MgNiO ultraviolet detector. Most of the research is focused on the growth of MgNiO thin films. In this study, the growth law of MgNiO thin films is studied by magnetron sputtering, and the phase separation and component deviation during the growth process are analyzed in detail. The main contents of this paper are as follows: firstly, the magnetron sputtering growth of MgNiO thin films on quartz substrates has been studied. The sputtering process has been studied in detail. The influence of parameters on the properties of MgNiO films, Including sputtering power, sputtering pressure, oxygen / argon ratio, annealing temperature and MgO buffer layer. The effects of different conditions on the crystal and optical properties of MgNiO thin films were analyzed by UV-Vis spectroscopy. The optimized sputtering parameters were obtained as follows: sputtering power 190W, sputtering pressure 1.5 Pa., oxygen / argon ratio 15: 25.The annealing temperature was not found to be high. The optimum growth parameters of MgO buffer layer are obtained: sputtering power 150W, sputtering pressure 0.5 Pa., argon flow rate 40sccm, sputtering time 30 min.Then the reason of phase separation is analyzed in detail. And the reason why mg component deviates from the target mg component in MgNiO thin film. The reason of phase separation is: a) the mobility of mg atom and O atom on substrate is lower than that of Ni atom at lower growth temperature, so mg cluster can be formed easily. During the annealing process, mg atoms in the gap migrate to the Ni vacancy after sufficient energy, and the saturated vapor pressure of the gap mg atoms to the Ni vacancy is higher than that of the MgO, which results in the increase of mg content in the local region and the effect of annealing treatment on the distribution of the components in the crystals, and during the annealing process, the saturated vapor pressure of the gap mg atoms to the Ni vacancies is higher than that of MgO. There will be more Ni evaporation during annealing, which is the main reason for the change of element composition after annealing. At the same time, more Ni atoms arrive on the substrate so that the Ni component of the film is higher than that of the target material. The effects of different buffer layers on the growth of MgNiO thin films were studied. By analyzing the properties of MgNiO films grown by Cu buffer layer and MgO buffer layer, it was found that MgO was a more suitable buffer layer. The phase separation phenomenon was greatly inhibited by the buffer layer, and the crystallization quality of MgNiO was improved. Finally, the interleaved electrode was prepared by photolithography on some samples with better crystal quality. MgNiO based optoelectronic devices with MSM structure have been fabricated, and the responsivity of the sample is up to a maximum of 134.1 渭 A / W at the incident wavelength of 289nm at 8V bias voltage.
【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TB383.2;TQ132.2

【參考文獻】

相關(guān)期刊論文 前2條

1 劉大博;;MSM結(jié)構(gòu)ZnO紫外探測器的制備及光電性能研究[J];航空材料學(xué)報;2012年03期

2 朱麗虹;蔡加法;李曉瑩;鄧彪;劉寶林;;In組分漸變提高InGaN/GaN多量子阱發(fā)光二極管發(fā)光性能[J];物理學(xué)報;2010年07期

相關(guān)博士學(xué)位論文 前4條

1 劉通;AlInGaN多量子阱發(fā)光材料的制備與光電性能研究[D];哈爾濱工業(yè)大學(xué);2015年

2 薛俊俊;高In組分InGaN化合物半導(dǎo)體的生長與表征[D];南京大學(xué);2014年

3 楊國鋒;InGaN/GaN低維量子阱結(jié)構(gòu)的制備及其發(fā)光性質(zhì)研究[D];南京大學(xué);2013年

4 王東博;AlInGaN半導(dǎo)體薄膜的MOVPE生長和光電特性研究[D];哈爾濱工業(yè)大學(xué);2013年

，

本文編號：1613007