本文選題：VO_2薄膜　切入點(diǎn)：緩沖層　出處：《深圳大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：現(xiàn)代城市的樓宇建筑中,為了美觀和提高采光率,玻璃門窗及幕墻占用面積不斷提高。為了避免普通玻璃節(jié)能性差、耗能嚴(yán)重的問題,使用節(jié)能鍍膜玻璃成為現(xiàn)代玻璃大廈最常見的節(jié)能措施,其中最常見的為Low-e鍍膜玻璃。然而Low-e鍍膜玻璃對太陽光譜的調(diào)節(jié)是固定的,其節(jié)能效果也是有限的。由于VO_2薄膜高低溫相變前后對紅外光透射率的突變性質(zhì),且其相變溫度在室溫附近,成為近年來人們冬暖夏涼“夢之窗”的研究熱點(diǎn)。本論文圍繞降低相變溫度、提升可見光透過率及太陽光紅外調(diào)節(jié)率等問題,研究了緩沖層、減反射層以及夾層結(jié)構(gòu)對VO_2薄膜光電性能的影響。采用電子束熱蒸發(fā)在常溫下分別沉積了100nm Al_2O_3和TiO_2薄膜作為緩沖層,通過直流反應(yīng)磁控濺射在不同緩沖層上分別制備了VO_2薄膜。結(jié)果表明,緩沖層誘導(dǎo)了VO_2薄膜的生長,提高了VO_2的結(jié)晶質(zhì)量,光電性能得到一定改善,且一定程度上降低了薄膜的相變溫度。其中采用TiO_2緩沖層所沉積VO_2薄膜在微結(jié)構(gòu)和相變性能方便表現(xiàn)最好。通過磁控濺射沉積了不同時(shí)間Ti預(yù)制層,在Ti預(yù)制層上生長VO_2薄膜,研究了薄膜樣品的光電特性。結(jié)果表明,Ti預(yù)制層改變了VO_2薄膜的c軸長度,大大降低了VO_2薄膜的相變溫度至45°C。高溫沉積VO_2薄膜過程生成TiO_2層,引起膜層間干涉,可見光透過率較單層VO_2薄膜有明顯提升。通過將透明度高的MgF_2,Al_2O_3,TiO_2薄膜沉積于良好光電性能的VO_2薄膜以作為減反射層,提高VO_2薄膜的可見光透射率。結(jié)果表明,沉積減反層的薄膜樣品可見光最大透過率及太陽光調(diào)控效果明顯提升,且沉積雙層減反層優(yōu)于單層減反層的薄膜樣品。其中,VO_2/TiO_2/Al_2O_3光學(xué)透過率波形與夢之窗最為相近,太陽光的調(diào)控能力最好,通過計(jì)算,太陽能調(diào)節(jié)率接近10%,其近紅外調(diào)節(jié)率接近35%,相比單層VO_2薄膜提升高達(dá)13%。在結(jié)晶效果較好的MgF_2膜表面沉積了VO_2薄膜。研究發(fā)現(xiàn),高溫沉積VO_2薄膜過程導(dǎo)致MgF_2中的部分Mg~(2+)和F-摻雜進(jìn)入薄膜。一方面,薄膜相變溫度下降,光譜吸收邊發(fā)生藍(lán)移,可見光最大透過率提升。另一方面,藍(lán)移導(dǎo)致薄膜太陽能調(diào)節(jié)效果有所下降。沉積MgF_2/VO_2/MgF_2夾層結(jié)構(gòu)的多層膜。結(jié)果表明,薄膜可見光最大透過率及太陽光調(diào)控效果比單層VO_2和單層MgF_2緩沖層樣品有明顯提升。其可見光最大透過率達(dá)55%,太陽能及近紅外調(diào)控效果分別為7.64%和27.46%。
[Abstract]:In modern urban buildings, the area occupied by glass doors, windows and curtain walls has been continuously increased in order to improve the lighting efficiency and beauty. In order to avoid the problem of poor energy saving and serious energy consumption of ordinary glass, The use of energy-efficient coated glass has become the most common energy-saving measure in modern glass buildings, the most common of which is Low-e coated glass. However, the regulation of solar spectrum by Low-e coated glass is fixed. The energy saving effect is also limited. Due to the abrupt properties of infrared transmittance before and after the phase transition at high and low temperatures, the phase transition temperature of VO_2 thin films is near room temperature. In recent years, it has become a hot topic in the study of "window of dreams" in winter, summer and cool. In this paper, the buffer layer is studied around lowering the temperature of phase transition, increasing the transmittance of visible light and adjusting the infrared rate of solar light, etc. The effect of antireflection layer and interlayer structure on the optical and electrical properties of VO_2 thin films was investigated. The 100nm Al_2O_3 and TiO_2 films were deposited as buffer layers by electron beam thermal evaporation at room temperature, respectively. VO_2 thin films were prepared on different buffer layers by DC reactive magnetron sputtering. The results show that the buffer layer induces the growth of VO_2 thin films, improves the crystallization quality of VO_2, and improves the optoelectronic properties to some extent. The phase transition temperature of the film is reduced to a certain extent, among which the VO_2 films deposited by TiO_2 buffer layer have the best microstructures and phase transformation properties. VO_2 thin films have been deposited on Ti prefabricated layers at different times by magnetron sputtering, and VO_2 thin films have been grown on Ti prefabricated layers. The optical and electrical properties of the thin film samples are studied. The results show that the C axis length of VO_2 films is changed by Ti prefabricated layers, and the phase transition temperature of VO_2 thin films is greatly reduced to 45 擄C. the formation of TiO_2 layers during the deposition of VO_2 films at high temperature results in interlayer interference. The transparent MgF2Al2O3TiO2 thin film was deposited on the VO_2 thin film with good photoelectric properties to improve the visible light transmittance of the VO_2 thin film as a antireflection layer. The results show that the visible light transmittance of the VO_2 thin film can be improved by the addition of the MgF2Al2O3TiO2 thin film to the VO_2 thin film with good optoelectronic properties. The maximum transmittance of visible light and the control effect of solar light of the thin film sample deposited by the anti-reflection layer were improved obviously, and the double layer anti-reflection layer was better than the thin film sample of the single-layer anti-reflection layer, and the optical transmittance waveform of the thin film sample deposited by the anti-reflection layer was the most similar to that of the dream window. The solar power is the best. By calculation, the solar energy regulation rate is close to 10, and the near infrared regulation rate is close to 35. Compared with the monolayer VO_2 film, the solar energy regulation rate is up to 13%. The VO_2 film was deposited on the surface of the MgF_2 film with better crystallization effect. The deposition of VO_2 films at high temperature results in partial Mg~(2) and F- doping in MgF_2. On the one hand, the phase transition temperature of the films decreases, the absorption edge of the films is blue shifted, and the maximum transmittance of visible light increases, on the other hand, The blue shift results in a decrease in the effect of solar energy regulation on the thin films. The results show that the multilayer films with MgF_2/VO_2/MgF_2 intercalation structure are deposited. The maximum transmittance of visible light and the control effect of solar light in the thin film were significantly improved than those in the single layer VO_2 and single layer MgF_2 buffer layer. The maximum visible light transmittance of the film was 55 and that of solar energy and near infrared was 7.64% and 27.46, respectively.
【學(xué)位授予單位】：深圳大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TQ135.11;TB383.2

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