發(fā)布時(shí)間：2018-03-12 10:16

  本文選題：CIGS薄膜太陽(yáng)電池　切入點(diǎn)：底層Mo薄膜　出處：《安徽工程大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：銅銦鎵硒(Cu(In,Ga)Se2,CIGS)薄膜太陽(yáng)電池具有光電轉(zhuǎn)換效率高、弱光性好、禁帶寬度可調(diào)等優(yōu)點(diǎn),備受光伏界的關(guān)注。該電池由Mo背接觸電極、CIGS光吸收層、CdS緩沖層、ZnO/ZnO:Al窗口層、金屬前柵線電極和MgF2減反層等多層功能材料構(gòu)成。電池器件的光電轉(zhuǎn)換效率、穩(wěn)定性等性能,直接受每層薄膜質(zhì)量的影響。本論文對(duì)部分薄膜層進(jìn)行優(yōu)化,以期得到高效穩(wěn)定的CIGS薄膜太陽(yáng)電池。主要開展了以下幾個(gè)方面的研究:(1)研究了濺射底層Mo薄膜的工作氣壓以及底層Mo薄膜的膜厚對(duì)Mo薄膜及其CIGS薄膜太陽(yáng)電性能的影響。結(jié)果顯示,高濺射氣壓(7.9 Pa)制備的Mo薄膜具有較高的電阻率和較低的反射率。低濺射氣壓(1.2 Pa)和較厚的膜厚(531.7 nm)有助于獲得較致密、結(jié)晶性好的Mo薄膜。在1.2 Pa的工作氣壓下制備的Mo電極應(yīng)用于CIGS薄膜太陽(yáng)電池上獲得14.4%的轉(zhuǎn)換效率。(2)研究在鈉鈣玻璃(SLG)和聚酰亞胺(PI)襯底上采用低襯底溫度制備CIGS薄膜并研究其相應(yīng)的太陽(yáng)電池性能。結(jié)果表明,隨著襯底溫度的降低,CIGS薄膜材料的XRD衍射圖譜中(112)、(220)/(204)和(116)/(312)均呈現(xiàn)出"雙峰劈裂"現(xiàn)象。PI襯底和SLG襯底上制備的CIGS薄膜皆出現(xiàn)分層結(jié)構(gòu),薄膜表層及底層呈現(xiàn)出小尺寸晶粒層,而中間層則為大尺寸晶粒。在器件方面,兩種襯底上的CIGS薄膜太陽(yáng)電池表現(xiàn)出相近的光電轉(zhuǎn)換效率,PI襯底上制備的CIGS薄膜太陽(yáng)電池具有較低的Voc和FF,但Jsc較高。制備的柔性CIGS薄膜太陽(yáng)電池(PI襯底)最高轉(zhuǎn)換效率為6.4%。(3)CIGS吸收層中摻入微量的堿金屬元素可以有效改善電池性能。本論文將堿金屬鉀摻入到不同襯底CIGS吸收層中,研究了 K元素的摻雜對(duì)薄膜材料及其電池性能的影響。結(jié)果發(fā)現(xiàn),鉀元素的摻入并未對(duì)薄膜晶粒結(jié)構(gòu)和尺寸產(chǎn)生影響,但提升了有阻擋層的玻璃襯底上電池器件的開路電壓,而對(duì)PI襯底太陽(yáng)電池并未起到理想中的效果。這是因?yàn)镻I襯底上CIGS薄膜質(zhì)量對(duì)摻雜效果具有較大的影響,同時(shí)堿金屬摻入量和電池的劃線工藝同樣也影響著電池的性能。
[Abstract]:CIGS thin film solar cells have many advantages, such as high photoelectric conversion efficiency, good weak light, adjustable band gap and so on, which have attracted much attention in photovoltaic field. This cell is composed of CIGS buffer layer and ZnO / ZnO: al window layer, which is composed of Mo back contact electrode and CIGS optical absorption layer. The multilayer functional materials such as metal front gate electrode and MgF2 antireflection layer are constructed. The photoelectric conversion efficiency and stability of the battery device are directly affected by the quality of each layer. In this paper, some thin film layers are optimized. In order to obtain CIGS thin film solar cells with high efficiency and stability, the following aspects have been studied: 1) the working pressure of Mo thin films deposited on the substrate and the solar electrical properties of Mo thin films and CIGS thin films on the substrate thickness of Mo thin films have been studied. The effect of energy. The results show that, Mo thin films prepared at high sputtering pressure (7.9 Pa) have higher resistivity and lower reflectivity. Low sputtering pressure (1.2 Pa) and thicker film thickness (531.7 nm) contribute to the compactness of Mo films. Mo thin Films with good Crystallization. The conversion efficiency of Mo electrode prepared at 1.2Pa working pressure for CIGS thin film solar cells has been obtained by 14.4%) the low substrate temperature was used to prepare the Mo film on sodium calcareous glass (SLG) and polyimide (Pi) substrates. The CIGS thin film and its corresponding solar cell performance are studied. The results show that, With the decrease of substrate temperature, the XRD diffraction patterns of CIGS thin films show "bimodal splitting" phenomenon in the XRD diffraction patterns. Both Pi substrates and SLG substrates have layered structures, and the surface and bottom layers of the films exhibit small grain layers. The middle layer is a large grain. In the case of devices, The CIGS thin film solar cells on two kinds of substrates show similar photoelectric conversion efficiency. The CIGS thin film solar cells prepared on Pi substrates have lower Voc and FFF, but higher Jsc. The prepared flexible CIGS thin film solar cells have the highest Pi substrates. The conversion efficiency is 6. 4%. The incorporation of trace alkali metal elements into the absorption layer of CIGS can effectively improve the performance of the battery. In this paper, potassium alkalinity is doped into the CIGS absorption layer on different substrates. The effect of K doping on the properties of thin films and their batteries was studied. It was found that the addition of potassium had no effect on the crystal structure and size of the films, but increased the open circuit voltage of the cell devices on the glass substrate with a barrier layer. This is because the quality of CIGS film on Pi substrate has a great influence on the doping effect, and the addition of alkali metal and the marking process of the cell also affect the performance of the cell.
【學(xué)位授予單位】：安徽工程大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TB383.2;TM914.4

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 趙穎;戴松元;孫云;馮良桓;;薄膜太陽(yáng)電池的研究現(xiàn)狀與發(fā)展趨勢(shì)[J];自然雜志;2010年03期

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本文編號(hào)：1601122