本文選題：TiN　切入點(diǎn)：電極薄膜　出處：《功能材料》2017年08期 　論文類型：期刊論文

【摘要】：二氧化鉿基新型鐵電薄膜器件等研究提出了在低襯底溫度下制備高導(dǎo)電性和低表面粗糙度納米超薄TiN電極薄膜的迫切需求。利用直流反應(yīng)磁控濺射方法在單晶硅基片上制備TiN薄膜,襯底溫度范圍從室溫~350℃,以XPS、XRD、AFM以及XRR等為主要手段對(duì)薄膜樣品的成分、物相、表面粗糙度以及厚度和密度等進(jìn)行了表征分析。結(jié)果表明在350℃的較低襯底溫度下,通過減少濺射沉積時(shí)間可獲得厚度30nm的高導(dǎo)電性TiN電極薄膜。
[Abstract]:New ferroelectric thin film devices based on hafnium oxide have been studied and the urgent need to fabricate nanocrystalline ultrathin TiN thin films with high conductivity and low surface roughness at low substrate temperature has been put forward. DC reactive magnetron sputtering method has been used in monocrystalline silicon. TiN thin films were prepared on substrates. The substrate temperature ranges from room temperature to 350 鈩，

本文編號(hào)：1556468