發(fā)布時(shí)間：2018-02-13 10:30

  本文關(guān)鍵詞： PECVD 計(jì)算流體力學(xué) 多孔介質(zhì) 數(shù)值模擬　出處：《機(jī)械設(shè)計(jì)與制造》2017年05期 　論文類型：期刊論文

【摘要】：利用計(jì)算流體動(dòng)力學(xué)(CFD)軟件,按照現(xiàn)有的工藝參數(shù)對(duì)某管式等離子增強(qiáng)化學(xué)氣相沉積(PECVD)設(shè)備腔體進(jìn)行三維數(shù)值模擬分析,研究了不同流量下工藝參數(shù)下PECVD設(shè)備腔體內(nèi)部流場(chǎng)的整體分布,并對(duì)石英片之間反應(yīng)區(qū)域的速度分布進(jìn)行詳細(xì)分析,并提出了多孔結(jié)構(gòu)在腔體內(nèi)部的應(yīng)用。計(jì)算結(jié)果表明該工藝參數(shù)下腔體內(nèi)部整體流動(dòng)穩(wěn)定,生長(zhǎng)區(qū)流速平緩對(duì)于薄膜生長(zhǎng)非常有利,在反應(yīng)腔前端加入多孔區(qū)有利于增加晶片間的流動(dòng)擴(kuò)散,提高薄膜沉積率。數(shù)值模擬仿真為PECVD設(shè)備制造提供一定的理論指導(dǎo)依據(jù)。
[Abstract]:The three-dimensional numerical simulation of a tube plasma enhanced chemical vapor deposition (PECVD) device cavity was carried out by using the computational fluid dynamics (CFD) software, according to the existing process parameters. The overall distribution of the flow field in the cavity of PECVD equipment under different flow rates is studied, and the velocity distribution of the reaction region between quartz slices is analyzed in detail. The application of porous structure in the cavity is presented. The calculation results show that the overall flow in the cavity is stable under the process parameters, and the smooth growth velocity in the growth zone is very favorable for the growth of the thin film. Adding porous region to the front end of the reactor can increase the flow diffusion between the wafers and increase the deposition rate of the film. The numerical simulation provides a theoretical basis for the manufacture of PECVD equipment.
【作者單位】： 中山大學(xué)物理與工程技術(shù)學(xué)院;
【基金】：國(guó)家自然科學(xué)基金資助項(xiàng)目(51402366,61404177)
【分類號(hào)】：TB43

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