本文選題：GaN + HEMT��； 參考：《電子科技大學(xué)》2016年博士論文

【摘要】：氮化鎵(GaN)高電子遷移率晶體管(HEMT)以其高頻、大功率、高效率等特性優(yōu)勢,成為近年來國內(nèi)外半導(dǎo)體器件方面研究的熱點(diǎn)。GaN HEMT的大信號(或非線性)特性及其模型的研究,在優(yōu)化器件工藝及結(jié)構(gòu)、指導(dǎo)電路設(shè)計(jì)和提高電路性能等方面具有重要的指導(dǎo)作用。傳統(tǒng)Si及GaAs基場效應(yīng)晶體管模型及其建模方法,難以精確表征GaN HEMT器件的一些特殊物理特性,如陷阱、自熱、諧波和環(huán)境溫度等特性。精確的微波毫米波GaN HEMT大信號模型對提高器件性能、縮短電路及系統(tǒng)的研發(fā)周期、提高成品率、降低成本及推動其大規(guī)模系統(tǒng)集成與應(yīng)用等方面具有重要意義。隨著GaN HEMT器件特征尺寸進(jìn)一步縮小、工作頻率和輸出功率的提升,以及對電路設(shè)計(jì)成品率的進(jìn)一步需求等因素的影響,開展微波毫米波GaN HEMT建模研究對GaN器件和電路的發(fā)展有著重要意義。因此,本文針對國產(chǎn)GaN HEMT工藝線,圍繞器件工作機(jī)理,采用經(jīng)驗(yàn)基等效電路建模方法,系統(tǒng)地研究了微波毫米波GaN HEMT大信號模型的建模技術(shù)。主要研究內(nèi)容包括:1.超寬帶GaN HEMT小信號等效電路模型研究。針對微波毫米波GaN HEMT器件的寄生特性,在傳統(tǒng)的晶體管小信號等效電路模型拓?fù)浠A(chǔ)上,增加了柵漏間寄生電阻Rpgd和柵極及漏極端的T型寄生電感,建立了改進(jìn)的寬帶等效電路模型結(jié)構(gòu),改善了頻率低端及高端范圍內(nèi)的小信號S參數(shù)擬合精度。在模型元件參數(shù)直接提取法基礎(chǔ)上,采用了一種基于偏置相關(guān)的多維目標(biāo)誤差函數(shù)的參數(shù)優(yōu)化方法,克服了傳統(tǒng)優(yōu)化法陷入局部最小值及單一偏置點(diǎn)下優(yōu)化得出參數(shù)值無物理意義的缺點(diǎn)。建立的小信號模型應(yīng)用于三種不同結(jié)構(gòu)GaN HEMT器件的小信號S參數(shù)預(yù)測結(jié)果表明,在40 GHz寬頻帶范圍內(nèi),模型具有較好的精度和通用性。2.微波毫米波GaN HEMT大信號電熱模型研究。針對器件材料的非線性熱導(dǎo)率特性,采用有限元熱仿真方法,建立了以功耗為函數(shù)的非線性熱子電路模型。針對GaN HEMT非對稱跨導(dǎo)等特性,在傳統(tǒng)Angelov經(jīng)驗(yàn)基大信號模型基礎(chǔ)上,改進(jìn)和修正了非線性漏源電流模型和非線性柵電容模型對柵電壓的依賴特性,采用了脈沖動態(tài)I-V測試技術(shù)對GaN HEMT的陷阱效應(yīng)進(jìn)行表征,建立了包含自熱和陷阱效應(yīng)的大信號電熱模型。與傳統(tǒng)大信號模型相比,該大信號模型對DC I-V、輸出功率和效率等性能具有更高的預(yù)測精度。并基于該建模方法,對不同場板結(jié)構(gòu)的GaN HEMT進(jìn)行了建模和大信號輸出特性分析,進(jìn)一步驗(yàn)證了模型的準(zhǔn)確性和建模方法的有效性。3.高低溫GaN HEMT大信號熱電模型研究。GaN HEMT常應(yīng)用于高低溫環(huán)境的電路與系統(tǒng)中,其電性能不僅受自熱效應(yīng)影響,還隨環(huán)境溫度的變化而改變。本文針對高低溫環(huán)境電熱效應(yīng),基于器件電熱效應(yīng)的物理機(jī)理及熱傳遞理論,利用有限元熱穩(wěn)態(tài)和瞬態(tài)仿真方法,分析了自熱效應(yīng)和環(huán)境溫度對GaN HEMT溝道溫度的影響,提取了等效的溝道熱阻和熱容參數(shù),建立了以環(huán)境溫度為函數(shù)的雙熱子電路模型,在-55到175 oC環(huán)境溫度下對溝道溫度具有更精確的預(yù)測結(jié)果。并根據(jù)該高低溫電熱特性,改進(jìn)了非線性漏源電流和柵電容公式。測試和仿真結(jié)果對比表明,該大信號電熱模型對高低溫環(huán)境的小信號S參數(shù)、大信號基波、二次諧波和三次諧波輸出功率及效率等特性具有較高的預(yù)測精度。4.GaN HEMT大信號縮放模型研究。大信號模型的可縮放性是對大尺寸器件建模的重要手段,針對多指器件的熱耦合效應(yīng)和復(fù)雜的寄生特性,本文以中等柵寬尺寸的經(jīng)驗(yàn)基大信號模型為參考,根據(jù)GaN HEMT器件柵指數(shù)和單位柵寬的物理幾何特點(diǎn),提出了基于器件尺寸大小的熱子電路模型和分區(qū)域結(jié)構(gòu)的大信號模型縮放規(guī)則,建立了完整的大信號縮放模型。與不同柵指數(shù)和單位柵寬的GaN HEMT在片測試結(jié)果驗(yàn)證表明,該大信號縮放模型能準(zhǔn)確地預(yù)測基波及高次諧波的負(fù)載牽引阻抗特性,以及不同匹配狀態(tài)下的基波及高次諧波輸出功率和效率等特性,并且在大功率高效率功放單片電路(MMIC)中的預(yù)測結(jié)果精度較高。為大柵寬和高效率功率放大器MMIC設(shè)計(jì)與優(yōu)化提供了準(zhǔn)確的大信號可縮放模型,同時(shí)為大柵寬器件及其模型研究提供了一定的指導(dǎo)作用。
[Abstract]:Gallium nitride (GaN) high electron mobility transistor (HEMT), with its high frequency, high power, high efficiency and so on, has become a hot spot (or nonlinear) characteristic and model of.GaN HEMT, a hot spot in the field of semiconductor devices both at home and abroad in recent years, to optimize the process and structure of the device, guide the circuit design and improve the performance of the circuit. The traditional Si and GaAs based field effect transistor models and their modeling methods are difficult to accurately characterize some special physical properties of GaN HEMT devices, such as traps, heat, harmonic and ambient temperature. Accurate microwave millimeter wave GaN HEMT large signal model is used to improve the performance of devices and shorten the development week of circuits and systems. It is of great significance to improve the rate of finished products, reduce the cost and promote its large-scale system integration and application. With the further reduction of the feature size of GaN HEMT devices, the improvement of the working frequency and output power, and the further demand for the product rate of the circuit design, the research on the modeling of the microwave millimeter wave GaN HEMT is carried out to G The development of aN devices and circuits is of great significance. Therefore, this paper systematically studies the modeling technology of microwave millimeter wave GaN HEMT large signal model based on the mechanism of domestic GaN HEMT technology and the method of empirical based equivalent circuit modeling. The main research contents include: 1. ultra wideband GaN HEMT small signal equivalent circuit model research In view of the parasitism of the microwave millimeter wave GaN HEMT device, on the basis of the traditional transistor small signal equivalent circuit model topology, the gate leakage parasitic resistance Rpgd and the T type parasitic inductance of the gate and the leakage extremes are added. The improved broadband equivalent circuit model structure is established, and the small signal S parameter in the low frequency and the high-end range is improved. On the basis of the direct extraction of model element parameters, a parameter optimization method based on the bias dependent multi-dimensional objective error function is adopted to overcome the shortcomings of the traditional optimization method being trapped in the local minimum and the single bias point to optimize the parameter value without physical meaning. The small signal model is applied to the three kinds. The small signal S parameter prediction results of the same structure GaN HEMT show that the model has good accuracy and universal.2. microwave millimeter wave GaN HEMT large signal electrothermal model in the wide band range of 40 GHz. In view of the nonlinear thermal conductivity of the device material, the nonlinear finite element thermal imitation method is used to establish the nonlinearity of the power as a function. For the asymmetric transconductance of GaN HEMT, based on the traditional Angelov empirical based large signal model, the dependence characteristic of the nonlinear drain current model and the nonlinear gate capacitance model on the grid voltage is improved and modified. The pulse dynamic I-V test technique is used to characterize the trap effect of GaN HEMT, and the inclusion is included. The large signal electrothermal model of heat and trap effect. Compared with the traditional large signal model, the large signal model has higher prediction accuracy for the performance of DC I-V, output power and efficiency. Based on this modeling method, the modeling and large signal output characteristics of different field plate structures are modeled and the large signal output characteristics are analyzed, and the accuracy of the model is further verified. .3. high temperature GaN HEMT large signal thermoelectric model study on high temperature and low temperature HEMT large signal thermoelectric model;.GaN HEMT is often applied to the circuit and system of high and low temperature environment. Its electrical properties are not only influenced by the effect of self heat, but also with the change of ambient temperature. The effect of heat effect and ambient temperature on the GaN HEMT channel temperature is analyzed by using the finite element thermal stability and transient simulation method. The equivalent heat resistance and heat capacity parameters are extracted. The double thermo circuit model with the function of the environment temperature is established. The channel temperature is more accurate at the temperature of -55 to 175 oC. According to the high and low temperature electric heating characteristics, the nonlinear leakage current and the gate capacitance formula are improved. The test and simulation results show that the large signal electric heating model has a high prediction precision of.4.GaN HEM for small signal S parameters, large signal base wave, two harmonic and three harmonic output power and efficiency. T large signal scaling model research. The scalability of large signal model is an important means of modeling large size devices. In view of the thermal coupling effect and complex parasitic characteristics of multi finger devices, this paper takes the medium wide size of the empirical base large signal model as reference, and proposes the physical and geometric characteristics of the gate index and the unit gate width of the GaN HEMT devices. The whole large signal scaling model is established based on the thermo circuit model of the device size and the large signal model of the sub region structure. The GaN HEMT with the different gate index and the unit gate width shows that the large signal scaling model can accurately predict the load traction impedance of the fundamental and high harmonic waves. The accuracy of the prediction results in the high power and high efficiency amplifier monolithic circuit (MMIC) is high. It provides an accurate large signal scalable model for the design and optimization of large grid width and high efficiency power amplifier MMIC. The model research provides a certain guiding role.

【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2016
【分類號】：TN386

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相關(guān)期刊論文 前1條

1 任春江;李忠輝;焦剛;董遜;李肖;陳堂勝;李拂曉;;4W/mm藍(lán)寶石襯底AlGaN/GaN HEMT[J];固體電子學(xué)研究與進(jìn)展;2007年03期

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本文編號：1822504