發(fā)布時(shí)間：2018-03-24 20:54

  本文選題：霍爾磁傳感器　切入點(diǎn)：CMOS工藝　出處：《南京大學(xué)》2017年博士論文

【摘要】：隨著社會(huì)智能化的推進(jìn),傳感器作為感知層的重要組成部分,在智能系統(tǒng)中有著舉足輕重的作用。磁傳感器不僅可用來(lái)探測(cè)磁場(chǎng),還可以通過(guò)一系列轉(zhuǎn)換來(lái)測(cè)量壓力、位置、位移、速度、加速度、角度、角速度、電流等,在全球每年擁有數(shù)十億美元的市場(chǎng),其中霍爾效應(yīng)磁傳感器占據(jù)絕大部分份額。主要原因是霍爾效應(yīng)磁傳感器覆蓋的磁感應(yīng)強(qiáng)度范圍和各種永磁材料產(chǎn)生的磁感應(yīng)強(qiáng)度范圍吻合,另外,霍爾效應(yīng)磁傳感器的最大優(yōu)勢(shì)是能與CMOS(Complementary Metal Oxide Semiconductor,互補(bǔ)金屬氧化物半導(dǎo)體)工藝無(wú)縫結(jié)合,相對(duì)其它磁傳感器能以更低成本在單一芯片實(shí)現(xiàn)傳感單元、信號(hào)調(diào)理、數(shù)字化輸出等各種功能的集成。在以往CMOS三維霍爾磁傳感的研究開(kāi)發(fā)中,由于研究工具及方法的脫節(jié),器件結(jié)構(gòu)、電路模型以及版圖設(shè)計(jì)這幾個(gè)影響傳感器性能的重要環(huán)節(jié)往往不能融合,帶來(lái)的問(wèn)題就是研究流程很長(zhǎng),優(yōu)化經(jīng)驗(yàn)及數(shù)據(jù)很難傳遞參與設(shè)計(jì)迭代環(huán)節(jié)。本論文主要針對(duì)以上問(wèn)題從器件建模、仿真優(yōu)化、精確電路模型研究到版圖設(shè)計(jì)、流片、性能表征,然后多次迭代驗(yàn)證及優(yōu)化傳感器設(shè)計(jì),同時(shí)形成一套較為完整的單芯片霍爾磁傳感器快速研究開(kāi)發(fā)方法。本論文主要圍繞如何提高3D霍爾器件的性能展開(kāi)研究。第一步,對(duì)其中重要的部件水平霍爾器件做了詳細(xì)研究,基于GLOBALFOUNDRIES的0.18μm BCDliteTM工藝三次流片實(shí)現(xiàn)多種架構(gòu)的十字形水平霍爾器件,并通過(guò)Silvaco TCAD分析實(shí)驗(yàn)數(shù)據(jù),對(duì)每種結(jié)構(gòu)的優(yōu)缺點(diǎn)做了詳細(xì)的分析。然后通過(guò)優(yōu)化工藝參數(shù),提高了器件靈敏度,并對(duì)器件進(jìn)行變溫測(cè)試,分析了不同溫度下的電阻、靈敏度以及失調(diào)特性。提出了一種90°對(duì)稱的水平霍爾器件的電路模型,用Verilog-A描述該模型,并集成在Spectre中仿真驗(yàn)證�；�2脈沖旋轉(zhuǎn)電流法設(shè)計(jì)出十字形霍爾器件的調(diào)理電路;第二步,對(duì)5CVHD(5電極垂直霍爾器件)結(jié)構(gòu)的垂直霍爾器件進(jìn)行了研究,基于GLOBALFOUNDRIES的0.18μm BCDliteTM工藝借助COMSOL從長(zhǎng)度、寬度、電極位置以及工藝等方面研究并改進(jìn)了器件的結(jié)構(gòu),提出一種5CVHD的電路模型,通過(guò)JFET來(lái)模擬電阻和電容特性,并充分考慮了各種物理效應(yīng)。該模型被描述成Verilog-A,并能夠順利在Spectre中仿真驗(yàn)證。根據(jù)4脈沖旋轉(zhuǎn)電路法設(shè)計(jì)出適合5CVHD結(jié)構(gòu)的調(diào)理電路;最后,對(duì)3D霍爾器件進(jìn)行研究,提出了兩種3D霍爾器件結(jié)構(gòu),第一種是借鑒兩種分立器件的研究成果,采用水平霍爾器件與垂直霍爾器件相配合的多器件結(jié)構(gòu)方案。第二種是單器件結(jié)構(gòu),提出了一種十字形3D霍爾單器件結(jié)構(gòu),該結(jié)構(gòu)具有下列優(yōu)點(diǎn):面積小,為120μm2;器件集中在微小的一點(diǎn),有效消除非正交誤差;兼容性強(qiáng)。設(shè)計(jì)了十字形3D霍爾器件的電路模型,精確模擬了電阻、霍爾電壓等基本特點(diǎn)外,還充分考慮了非線性、幾何效應(yīng)、溫度效應(yīng)以及交流特性等物理效應(yīng)。借助電路模型對(duì)十字形3D霍爾器件進(jìn)行分析,并設(shè)計(jì)出相應(yīng)的調(diào)理電路。論文的主要?jiǎng)?chuàng)新點(diǎn)如下:1、通過(guò)設(shè)計(jì)流程的多次迭代,對(duì)水平霍爾器件結(jié)構(gòu)進(jìn)行優(yōu)化,將靈敏度從81.6V/AT提高到402V/AT的同時(shí),提取出器件靈敏度、失調(diào)以及電阻的溫度系數(shù),為后面垂直霍爾器件以及3D霍爾器件的研究做準(zhǔn)備。在垂直霍爾器件和3D霍爾器件的研究中,基于水平霍爾器件的研究經(jīng)驗(yàn)在COMSOL工具中建模,通過(guò)COMSOL工具迭代優(yōu)化及生成對(duì)應(yīng)的電路模型及優(yōu)化的器件結(jié)構(gòu),來(lái)替代原來(lái)多次流片迭代優(yōu)化的工作(2～3年迭代3～4次),將研發(fā)時(shí)間縮短到可按月來(lái)計(jì)。2、提出一種十字形3D霍爾器件結(jié)構(gòu),具有以下優(yōu)點(diǎn):面積小,為120μm2;器件集中在微小的一點(diǎn),有效消除非正交誤差;兼容性強(qiáng)。通過(guò)工藝和器件結(jié)構(gòu)的優(yōu)化,在提高了整體性能的基礎(chǔ)上,平衡三個(gè)方向的性能,x、y、z三個(gè)方向的靈敏度分別為:90.7V/AT,90.7V/AT 以及 86.9V/AT。3、針對(duì)于十字形水平霍爾器件,5CVHD以及十字形3D型霍爾器件,設(shè)計(jì)出與之對(duì)應(yīng)的高精度電路模型,三種電路模型均具有以下優(yōu)點(diǎn):充分考慮了電壓相關(guān)的非線性、幾何效應(yīng),以及溫度效應(yīng)等物理效應(yīng);將有源區(qū)上下的耗盡層厚度都考慮其中,提高了模型的精度;采用JFET來(lái)模擬器件的電阻以及電容效應(yīng),提高了模型的交流特性。
[Abstract]:With the advance of social intelligence, sensor as an important part of the perception layer, which plays an important role in the intelligent system. The magnetic sensor not only can be used to detect a magnetic field can also through a series of transformations to measure pressure, position, velocity, acceleration, displacement, angle, angular velocity, current, with billions of dollars in the global market each year, the Holzer effect of magnetic sensor to occupy the majority share. The main reason is that the magnetic induction intensity range have a Holzer effect of magnetic induction intensity range of magnetic sensor coverage and all kinds of permanent magnetic materials with, in addition, the biggest advantage is the Holzer effect of magnetic sensor with CMOS (Complementary Metal Oxide Semiconductor, a complementary metal oxide semiconductor) technology of seamless integration, relative to other magnetic sensors to achieve lower cost in the single chip sensing unit, signal conditioning, digital output The integration of various functions. In the research and development of 3D magnetic sensor in CMOS Holzer, because of disconnection, tools and methods for research of device structure, circuit model and layout design an important part of the impact performance of the sensor is often not fusion, the problem is caused by the research process is very long, it is difficult to transfer data and optimization experience in the design of iterative link. This dissertation is mainly to solve the above problems from the device modeling, simulation and optimization research, accurate circuit model to the layout design flow, performance characterization, and iterative verification and optimization of sensor design, while the formation of rapid research and development of a complete set of single chip Holzer magnetic sensor. This paper focuses on how to to improve the performance of 3D Holzer devices. The first step, the component level Holzer key device are studied in detail, the 0.18 m B based on GLOBALFOUNDRIES Implementation of cross horizontal Holzer devices a variety of architecture three CDliteTM chip technology, and the analysis of experimental data by Silvaco TCAD, of the advantages and disadvantages of each structure are analyzed in detail. Then by optimizing process parameters and improve the sensitivity of the device, and the device of temperature testing, analysis of the resistance under different temperature sensitivity. And the misalignment characteristics is proposed. The circuit model of a Holzer device level 90 degree symmetry, the model described by Verilog-A, and integrated in the Spectre simulation verification. The 2 pulse rotating current method to design the circuit device based on the cross of Holzer; the second step, the 5CVHD (5 vertical electrode device of vertical Holzer Holzer) the device structure is studied, 0.18 m BCDliteTM GLOBALFOUNDRIES process with COMSOL in length, width and position based on the electrode process, study and improve the structure of the device, put forward 涓，

本文編號(hào)：1659989