發(fā)布時間：2018-03-09 21:59

  本文選題：基片集成波導(dǎo)　切入點：背腔天線　出處：《東南大學(xué)》2016年博士論文　論文類型：學(xué)位論文

【摘要】：社會經(jīng)濟的發(fā)展深刻地改變著人們之間的通信方式。高度集成化和功能的不斷外延,使得手機已不限于人與人之間的通信,而是逐漸成為連接任何人與物的工具。為了應(yīng)對日益增長的通信流量,發(fā)展新一代(5G)無線通信技術(shù)就顯得非常必要。5G將是多種技術(shù)多種體制的融合,而且將擴展到毫米波頻段,因此大幅度提高系統(tǒng)集成度將成為關(guān)鍵技術(shù)途徑。射頻與天線是無線系統(tǒng)中的關(guān)鍵子系統(tǒng)和部件,其性能優(yōu)劣和集成度將直接影響系統(tǒng)的性能和集成度。在毫米波頻段,傳統(tǒng)的立體金屬波導(dǎo)顯然不再適合上述要求。因此,平面化的毫米波無源元件和天線就變得至關(guān)重要。本論文主要基于近十幾年發(fā)展起來的基片集成波導(dǎo)(SIW)技術(shù),針對下一代無線通信技術(shù),研究并實現(xiàn)高性能的毫米波無源元件與天線。論文的安排如下:第一章簡要介紹了一些關(guān)鍵無源射頻元件與天線的背景、當前無線通信所面臨的挑戰(zhàn)和本論文的研究目標與內(nèi)容。第二章提出了一種具有寬帶和高增益特性的背腔互補三角形環(huán)(TCSRS)天線。SIW腔用于激勵TCSRS天線。首先針對單元天線進行了原理研究,然后擴展到陣列。針對28 GHz和45 GHz 5G候選頻段采用0.508mm厚的Rogers5880微波基片進行了設(shè)計和實驗驗證。在28 GHz和45 GHz頻段分別獲得了 16.67%和22.2%的阻抗帶寬;2×2天線陣在30 GHz和50 GHz測得的峰值增益分別為13.5 dBi和15 dBi�；陔p層板結(jié)構(gòu)和縫隙耦合又進一步將TCSRS天線擴展到2 × 4陣列,在48 GHz上獲得的最大增益為16.28 dBi。這部分工作已發(fā)表在IEEE Trans.on Antennas and Propagation.第三章提出了一種45 GHz頻段雙層板縫隙耦合2 × 2和4 × 4微帶天線陣。實測的2× 2陣列天線的阻抗帶寬為25%、3dB增益帶寬為19%、峰值增益為14 dBi;4×4天線陣的阻抗帶寬為30%、3 dB增益帶寬為18%、峰值增益為17.4 dBi.第四章基于SIW技術(shù)提出了一種背腔圓極化圓形貼片(CB-(CP)2)天線,其圓形貼片諧振在TMu主模,SIW矩形腔諧振在其TE101主模。為了產(chǎn)生圓極化,圓形貼片天線與SIW腔的上表面通過兩個幾乎垂直的金屬帶連接。在Ka波段實現(xiàn)了 9.5%的阻抗帶寬和2%的3 dB軸比(AR)帶寬,在33.8 GHz上的峰值增益為8.1 dBi。在此基礎(chǔ)上,通過增加更多的諧振槽又擴展實現(xiàn)了雙頻段雙圓極化天線。這部分工作已錄用并將發(fā)表在Wiley Interscience,Microwave and Optical Technology Letters.第五章提出了一種簡單的寬帶三端口正交模耦合器(OMT)結(jié)構(gòu)。該結(jié)構(gòu)不需要短路銷釘、金屬隔板或金屬角錐等。三端口包括:2.54mm×2.54mm的方波導(dǎo)端口和兩個正交放置的2.54mm× 1.27mm WR-10矩形波導(dǎo)端口。在70-95 GHz頻段進行了設(shè)計和測試,帶寬達到30%,仿真的插損小于0.3dB,極化隔離優(yōu)于35dB。這部分工作發(fā)表在IEEE International Wireless Symposium 2015.第六章利用SIW腔的二階凋落模提出了一種新穎的雙頻段濾波器,采用厚度為0.508mm的Rogers RT/Duroid 5880基片在Ka波段進行了實驗驗證。兩個頻段中心頻率比為(FR)為1.073,測試的兩個頻帶帶內(nèi)回波損耗優(yōu)于-15dB,頻帶隔離度優(yōu)于40dB。這部分工作發(fā)表在IEEE 2015 Asia-Pacific Microwave Conference.
[Abstract]:The economic and social development profoundly changing the means of communication between people. The ever expanding high integration and function, the mobile phone is not confined to the communication between people, but gradually become connected to any people and things of the tool. In order to cope with the growing traffic, the development of a new generation (5G) wireless communication it is very necessary to.5G technology is the integration of a variety of kinds of technology system, and will extend to the millimeter wave band, thus greatly improve the system integration approach will become the key technology. RF and antenna is the key subsystems and components in wireless system, its performance and integration will directly affect the system performance and integration. In millimeter wave band, the traditional stereo metal waveguide is clearly no longer suitable for the above requirements. Therefore, the plane of millimeter wave passive components and antennas is very important. This paper is mainly based on the past The substrate integrated waveguide more than ten years to develop (SIW) technology for the next generation of wireless communication technology, the research and implementation of high performance millimeter wave passive components and antennas. The arrangement of the thesis are as follows: the first chapter briefly introduces some key components and passive RF antenna, the wireless communication and the challenges the research objectives and contents. The second chapter presents a back cavity with broadband and high gain characteristics of complementary triangle ring (TCSRS) antenna.SIW cavity for excitation TCSRS antenna. Firstly according to the principle of the antenna unit, and then extended to the array. For 28 GHz and 45 GHz 5G candidate bands with 0.508mm thick Rogers5880 microwave substrate was designed and verified experimentally. The impedance bandwidth of 16.67% and 22.2% respectively in 28 GHz and 45 GHz band; the peak gain of 2 x 2 array antenna at 30 GHz and 50 GHz measured respectively 13. 5 dBi and 15 dBi. double panel structure and coupling based on TCSRS antenna and further extended to 2 x 4 array, the biggest gain in the 48 GHz 16.28 dBi. for this part of the work has been published in the IEEE Trans.on Antennas and Propagation., the third chapter presents a 45 GHz band double plate slot coupling 2 x 2 and 4 * 4 microstrip antenna array. The measured impedance bandwidth of 2 * 2 array antenna for 25% 3dB, the gain bandwidth is 19%, the peak gain of 14 dBi; 4 * 4 array antenna impedance bandwidth of 30%, 3 dB gain bandwidth is 18%, the peak gain of 17.4 dBi. fourth SIW technology presents a back cavity based on the circularly polarized circular patch (CB- (CP) 2) the circular patch antenna, resonant in TMu mode, SIW rectangular cavity in the TE101 main mode. In order to produce circular polarization, circular patch antenna and the SIW cavity on the surface by two almost vertical metal band at Ka band is connected. The impedance bandwidth of 9.5% and 2% 3 dB axial ratio (AR) bandwidth, the peak gain at 33.8 GHz for 8.1 dBi. on the basis of this, by increasing the resonant tank more and the expansion of the realization of the dual band dual polarized antenna. This work has been accepted and will be published in Wiley Interscience, Microwave and Optical Technology Letters., the fifth chapter puts forward a simple three port broadband orthogonal mode coupler (OMT) structure. This structure does not need the pins, the metal plate or metal pyramid. Three port includes a square waveguide port 2.54mm * 2.54mm and two * 1.27mm 2.54mm placed orthogonal WR-10 rectangular waveguide is designed and port. The test on the 70-95 GHz band, the bandwidth reaches 30%, the insertion loss is less than 0.3dB simulation, polarization isolation is better than 35dB. in which IEEE International Wireless Symposium 2015., the sixth chapter uses SIW cavity two order litter Model presents a novel dual band bandpass filter with a thickness of 0.508mm and Rogers RT/Duroid 5880 substrates were tested in the Ka band. The two frequency band center frequency ratio (FR) was 1.073, the test two band band return loss is better than -15dB, the isolation is better than the 40dB. band of this part of the work: in the IEEE 2015 Asia-Pacific Microwave Conference.

【學(xué)位授予單位】：東南大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2016
【分類號】：TN820;TN713;TN622

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