硅基聚合物微環(huán)諧振光開關(guān)及陣列的分析模擬
本文選題:集成光電子學(xué) 切入點(diǎn):光波導(dǎo)器件 出處:《吉林大學(xué)》2016年博士論文 論文類型:學(xué)位論文
【摘要】:光開關(guān)及陣列是光交叉連接設(shè)備、光分叉復(fù)用設(shè)備以及光路由設(shè)備中的關(guān)鍵器件,在光通信網(wǎng)絡(luò)中起著非常重要的作用。相比無機(jī)電光材料,極化聚合物材料具有電光系數(shù)高、響應(yīng)時(shí)間短、折射率易調(diào)整、價(jià)格低廉、制備工藝簡(jiǎn)單等優(yōu)點(diǎn),在電光開關(guān)、電光調(diào)制器等電光器件的制備中具有潛在的應(yīng)用前景。微環(huán)諧振器(MRR)具有結(jié)構(gòu)緊湊、相位易匹配等優(yōu)點(diǎn),從而廣泛應(yīng)用于光濾波器、波分復(fù)用/解復(fù)用器等器件的設(shè)計(jì)和制備中。鑒于上述考慮,本論文主要研究MRR輔助的MZI電光開關(guān)以及基于MRR濾波特性的波長選擇性無源光開關(guān)陣列,設(shè)計(jì)新型器件結(jié)構(gòu),給出其分析理論和參數(shù)優(yōu)化方法,計(jì)算并模擬器件性能,為實(shí)驗(yàn)室制備該類以及同類器件提供依據(jù)。本論文介紹了開展聚合物微環(huán)諧振光開關(guān)及陣列研究的意義。概述了光開關(guān)及陣列在光通信網(wǎng)絡(luò)中的主要作用,介紹了光開關(guān)的分類。重點(diǎn)闡述了兩種非諧振型波導(dǎo)光開關(guān)的研究進(jìn)展,包括非諧振型電光開關(guān)和非諧振型熱光開關(guān),并進(jìn)一步給出了微環(huán)諧振型光開關(guān)及陣列的研究現(xiàn)狀和特點(diǎn)。其次,針對(duì)本論文所設(shè)計(jì)器件用到的矩形波導(dǎo)結(jié)構(gòu),應(yīng)用微擾法和微分法分析了高折射率襯底上的五層平板波導(dǎo)、雙金屬包層型平板波導(dǎo)、介質(zhì)吸收型矩形波導(dǎo)的模式特性,通過詳細(xì)的理論推導(dǎo),得到了各波導(dǎo)結(jié)構(gòu)的模式特征方程和振幅衰減系數(shù)的表達(dá)式。分析了雙矩形波導(dǎo)的定向耦合和彎曲耦合特性、矩形波導(dǎo)的彎曲損耗特性。給出了微環(huán)諧振理論,為微環(huán)諧振光開關(guān)及陣列的優(yōu)化設(shè)計(jì)和分析模擬奠定了理論基礎(chǔ)。采用耦合模理論、微環(huán)諧諧振理論和電光調(diào)制理論,本論文重點(diǎn)設(shè)計(jì)并分析模擬了三種結(jié)構(gòu)可擴(kuò)展型光開關(guān)及陣列器件:一、設(shè)計(jì)并優(yōu)化了一種基于N階側(cè)向耦合微環(huán)諧振器的馬赫-曾德爾干涉儀(MRR-SC-MZI)電光開關(guān)。推導(dǎo)了器件的輸出光功率、插入損耗、串?dāng)_、3 dB帶寬等表達(dá)式。在1550 nm工作波長下,優(yōu)化了器件的結(jié)構(gòu)參數(shù),分析模擬了器件性能,并重點(diǎn)總結(jié)了開關(guān)特性隨其擴(kuò)展參數(shù)N的關(guān)系式。計(jì)算結(jié)果表明,所有N≥1的器件均可執(zhí)行正常的開關(guān)功能,當(dāng)要求驅(qū)動(dòng)電壓小于5V時(shí),要求8≥N≥2。針對(duì)N=2-8的7個(gè)MRR電光開關(guān),交叉態(tài)的驅(qū)動(dòng)電壓范圍為0-2.32 V,直通態(tài)電壓的范圍為0.96-4.83 V;直通態(tài)的插入損耗為0.85-0.35dB,交叉態(tài)的插入損耗為0.14-1.70 dB;直通態(tài)的串?dāng)_范圍為-20.79--31.11dB,交叉態(tài)的串?dāng)_范圍為-13.86--20.36 dB。7個(gè)器件的3-dB的電學(xué)調(diào)制帶寬范圍為18.5-28.0 GHz;兩個(gè)輸出端口的3-dB光學(xué)調(diào)制帶寬分別為18.1-40.0GHz和32.0-55 GHz。在相同的電光區(qū)長度和結(jié)構(gòu)參數(shù)下,該MRR-SC-MZI電光開關(guān)的驅(qū)動(dòng)電壓比傳統(tǒng)結(jié)構(gòu)的MZI電光開關(guān)的驅(qū)動(dòng)電壓小10~250倍。二、設(shè)計(jì)并優(yōu)化了一種2N+1階串聯(lián)耦合微環(huán)諧振馬赫-曾德爾干涉儀(MRR-MZI)電光開關(guān)。給出了器件結(jié)構(gòu),推導(dǎo)了器件的傳輸光功率、插入損耗、串?dāng)_等表達(dá)式。在1550 nm工作波長下,優(yōu)化了器件的結(jié)構(gòu)參數(shù),研究了器件性能與階數(shù)N的關(guān)系。分析模擬結(jié)果表明,除了N=0對(duì)應(yīng)的的一階MRR-MZI電光開關(guān)外,其它N≥1的器件均可執(zhí)行正常的開關(guān)功能。為了將此類電光開關(guān)的電壓降至1.0 V以下,應(yīng)選取5≥N≥2。針對(duì)N=2-5對(duì)應(yīng)的4種MRR-MZI電光開關(guān),其開關(guān)電壓分別為0.99、0.73、0.57和0.47 V;直通狀態(tài)的插入損耗范圍為1.15~2.26 dB,交叉狀態(tài)的插入損耗范圍為1.95~2.42 dB;直通狀態(tài)的串?dāng)_范圍為-11.04~-17.82 dB,交叉狀態(tài)的串?dāng)_范圍為-10.34~-12.51 dB。該器件的電壓-長度乘積約為0.21 V·mm。當(dāng)波導(dǎo)和電極參數(shù)完全相同時(shí),傳統(tǒng)MZI電光開關(guān)電壓-長度積(23.45 V·mm)約為該類器件的111.7倍。三、利用三種不同的基本開關(guān)單元,包括交叉耦合單環(huán)諧振器(CCO-MRR),交叉耦合雙環(huán)諧振器(CCT-MRR)和平行耦合單環(huán)諧振器(PCO-MRR),設(shè)計(jì)了具有相同開關(guān)功能的三種4×4波長選擇性開關(guān)陣列,且三種器件均具有N級(jí)級(jí)聯(lián)特性,從而可將工作波長擴(kuò)展至3N個(gè)。首先,優(yōu)化了開關(guān)單元的結(jié)構(gòu)參數(shù)。然后,給出了三種4×4波長選擇性開關(guān)陣列的拓?fù)浣Y(jié)構(gòu),對(duì)其開關(guān)性能做了詳細(xì)的對(duì)比分析。結(jié)果顯示,基于CCO-MRR和PCO-MRR的開關(guān)陣列的微環(huán)數(shù)量(4個(gè))是基于CCT-MRR的開關(guān)陣列的一半(8個(gè)),基于PCO-MRR的開關(guān)陣列呈現(xiàn)出最小的插入損耗(0.02-0.6 dB);基于CCT-MRR的開關(guān)陣列顯示出最小的串?dāng)_(-38 dB)和最好的波長選擇性;基于CCT-MRR和CCO-MRR的開關(guān)陣列具有相同的N級(jí)級(jí)聯(lián)結(jié)構(gòu),然而,基于PCO-MRR的開關(guān)陣列由于很多的不可避免的波導(dǎo)交叉難以級(jí)聯(lián)。針對(duì)微環(huán)諧振光開關(guān)及陣列,本論文所給出的具有可擴(kuò)展性的通用結(jié)構(gòu)模型、相關(guān)公式和分析方法均未見詳細(xì)報(bào)道,具有一定的新意,為人們?cè)O(shè)計(jì)、模擬和制備具體器件提供了模型和理論依據(jù)。本論文的創(chuàng)新點(diǎn)如下:(1)提出一種基于側(cè)向耦合N階微環(huán)諧振器的馬赫-曾德爾干涉儀電光開關(guān)的通用結(jié)構(gòu)模型和理論推導(dǎo),總結(jié)了器件性能隨級(jí)數(shù)N的關(guān)系。在相同的電光區(qū)長度和結(jié)構(gòu)參數(shù)下,該器件的驅(qū)動(dòng)電壓比傳統(tǒng)的MZI電光開關(guān)小10-250倍。(2)提出了一種基于2N+1階串聯(lián)耦合微環(huán)諧振器的馬赫-曾德爾干涉儀(MRR-MZI)電光開關(guān)的通用結(jié)構(gòu)模型和理論推導(dǎo),總結(jié)了器件性能隨級(jí)數(shù)N的關(guān)系。N=2-5所對(duì)應(yīng)的4種電光開關(guān)的開關(guān)電壓均可小于1.0V。當(dāng)波導(dǎo)和電極參數(shù)完全相同時(shí),該器件的電壓-長度積比傳統(tǒng)MZI電光開關(guān)小111.7倍。(3)利用三種不同結(jié)構(gòu)的MRR基本開關(guān)單元,設(shè)計(jì)了具有相同開關(guān)功能的三種4×4波長選擇性光開關(guān)陣列,并給出了該類器件的N級(jí)級(jí)聯(lián)拓?fù)浣Y(jié)構(gòu),其工作波長可由單級(jí)器件的3個(gè)擴(kuò)展至級(jí)聯(lián)器件的3N個(gè),從而使得該器件在復(fù)雜光片上網(wǎng)絡(luò)中寬光譜信號(hào)的路由及開關(guān)操作方面具有潛在的價(jià)值。
[Abstract]:Is the array optical switch and optical cross connect equipment, optical branching key device multiplex equipment and optical routing equipment, plays a very important role in the optical communication network. Compared to inorganic electro-optic materials, poled polymer materials with high electro-optic coefficient, short response time, easy to adjust the refractive index, the price is low, the advantages of the preparation process simply, in the electro-optical switch, have potential applications such as electro-optic modulator electro-optic devices. In the preparation of micro ring resonator (MRR) has advantages of compact structure, easy matching phase, which is widely used in optical filter, wavelength division multiplexing / demultiplexing device design and preparation. In view of the above considerations MZI, this paper mainly researches the MRR electro optic switch and auxiliary wavelength selective passive MRR filter based on the characteristics of optical switch array, design of a new type of device structure, gives the analysis of optimization theory and the method of parameter calculation and The performance of analog devices, provide the basis for the preparation of the laboratory and similar devices. This paper introduces the development of polymer switch and optical micro ring resonant array research significance. Summarizes the main function and optical switch array in optical communication network, this paper introduces the classification of optical switch. Focuses on the research progress of two kinds of non resonant waveguide optical switch, including non resonant and non resonant electro-optical switch type thermo optic switch, and further gives the research status and characteristics of micro ring resonator and optical switch array. Secondly, the rectangular waveguide structure is designed in this paper used the device, using the perturbation method and differential method to analyze the high refractive index of five slab waveguide substrate, dual metal clad planar waveguide, mode characteristics of rectangular waveguide type dielectric absorption, through detailed theoretical derivation, the waveguide mode characteristic equations and amplitude attenuation The reduction factor expression. Analysis of the double rectangular waveguide directional coupling and bending coupling characteristics, bending loss characteristics of rectangular waveguide micro ring resonator is given. The theory laid the theoretical foundation for the optimization design and simulation analysis of micro ring resonator and optical switch array. By using the coupled mode theory, micro ring resonant harmonic theory and electro-optic modulation this paper focuses on the theory, design and simulation analysis of three kinds of structure can be extended and the optical switch array device: first, design and optimize a N order side coupled micro ring resonator based on Maher interferometer was Del (MRR-SC-MZI) electro-optic switch is deduced. The output light power device, the insertion loss and crosstalk. 3 dB bandwidth expression. At 1550 nm wavelength, the device structure optimization, simulation analysis of the performance of the device, and summarized the relationship with the switching characteristics of expanded parameter N. The calculation results show that the There are more than 1 N devices can execute normal switching function, when the driving voltage is less than 5V, 8 = N = 2. for 7 MRR optical switch N=2-8, the drive voltage range of cross state is 0-2.32 V, the range of direct state voltage for 0.96-4.83 V; through the state of the insertion loss is 0.85-0.35dB, insert the loss of cross state is 0.14-1.70 dB; range for -20.79--31.11dB state through the crosstalk and crosstalk range cross state for electrical modulation bandwidth of -13.86--20.36 dB.7 devices 3-dB 18.5-28.0 GHz; 3-dB optical modulation bandwidth of two output ports respectively for 18.1-40.0GHz and 32.0-55 GHz. in length and structure parameters of electro optic under the same the driving voltage than the conventional MZI electro optic switch with low driving voltage 10~250 times the MRR-SC-MZI optical switch. Two, the design and optimization of a 2N+1 order series coupled microring Maher had de Seoul interferometer (MRR-MZI) electro-optic switch is given. The device structure is derived, the optical transmission power device, insertion loss, crosstalk and other expressions. In the 1550 nm wavelength, the structure parameters of the device were optimized, studied the relationship between the performance of the device and the order of N. Simulation results show that in addition to the first order MRR-MZI optical switch N=0 corresponding to the N = 1, other devices can execute normal switching function. In order to make such voltage electro-optic switch is below 1 V, 5 N or greater than or equal to 2. should be selected according to the 4 MRR-MZI optical switch N=2-5, the switch voltage were 0.99,0.73,0.57 and 0.47 V; through state insertion the loss range is 1.15 ~ 2.26 dB, insertion loss range of cross state is 1.95 ~ 2.42 dB; through the crosstalk is -11.04 ~ -17.82 range of state dB, crosstalk is -10.34 to cross state range of -12.51 dB. voltage of the device length product About 0.21 V mm. when the waveguide and electrode parameters are identical, the traditional MZI optical switch voltage - length product (23.45 V mm) is about 111.7 times of the devices. In three, the three basic switch units, including cross coupled single ring resonator (CCO-MRR), cross coupled double ring resonator (CCT-MRR) and parallel coupled single ring resonator (PCO-MRR), three 4 * 4 wavelength selective switch array with the same switch function is designed, and the three kinds of devices have N cascade characteristics, can be extended to the working wavelength of 3N. Firstly, the optimization of structure parameters of the switch unit. Then, given the topology of three 4 x 4 wavelength selective switch array, the performance of the switch to do a detailed analysis. The results showed that the number of micro ring switch array based on PCO-MRR and CCO-MRR (4) is based on the half switch array CCT-MRR (8), based on PCO-MRR The switch array showed a minimum insertion loss (0.02-0.6 dB); CCT-MRR switch array showed minimal Crosstalk Based on (-38 dB) and the best wavelength selective switch array; CCT-MRR and CCO-MRR based on N cascade structure of the same, however, based on the switch array PCO-MRR because many of the inevitable difficult to cross the cascade for micro ring resonator optical switch and array, with a scalable general structure model of this paper gives the related formulas and analysis methods have not been reported in detail, and have some new ideas, for people to design, simulation and preparation of specific devices provide model and theoretical basis. The innovations of this thesis are as follows: (1) proposed a N order side coupled micro ring resonator based on Maher interferometer was Del electro-optic switch general structure model and theory, with the N series device performance summary. The length and structure of electro-optical system. Under the same parameters, the driving voltage of this device is 10-250 times smaller than the traditional MZI optical switch. (2) proposed a series coupled microring resonator Maher had Del interferometer based on order 2N+1 (MRR-MZI) electro-optic switch general structure model and theoretical derivation, switch 4 kinds of electro-optic voltage can be.N=2-5 corresponding relationship with the N series device performance summary of the switch is less than 1.0V. when the waveguide and electrode parameters are identical, the length of the product - voltage of the device is 111.7 times smaller than the traditional MZI electro-optic switch. (3) using three different structure of the MRR switch unit is designed optical switch array three 4 x 4 has the same wavelength selective switch function, and N cascade topology structure of this kind of devices are given, the working wavelength of 3 3N can be extended to the cascade device single stage device, which makes the device in the complex The potential value of optical network on chip wide spectrum signal routing and switching operation.
【學(xué)位授予單位】:吉林大學(xué)
【學(xué)位級(jí)別】:博士
【學(xué)位授予年份】:2016
【分類號(hào)】:TN929.1
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