本文關(guān)鍵詞： IV族半導(dǎo)體材料 硅基光電子學(xué) 二階非線性光學(xué)效應(yīng) 電光效應(yīng) 光整流效應(yīng) 載流子色散效應(yīng)　出處：《吉林大學(xué)》2017年博士論文　論文類型：學(xué)位論文

【摘要】：硅和鍺都是第一代半導(dǎo)體材料,在微電子學(xué)和光電子技術(shù)領(lǐng)域獲得了重要應(yīng)用。特別是硅材料,由于其價(jià)格低廉,工藝成熟,利于集成,在1.3μm和1.55μm通訊波段是透明的,因而在集成光學(xué)和光電子學(xué)領(lǐng)域廣受青睞。近年來,由于鍺材料與硅的CMOS工藝兼容性良好,且對(duì)中紅外光具有良好的透過性,可將現(xiàn)有的通訊波長(zhǎng)擴(kuò)展至中紅外波段,因此鍺基光電器件在硅基光電子學(xué)中的應(yīng)用也引起了人們的關(guān)注。所以,本論文重點(diǎn)開展了硅和鍺材料表面層中的Pockels效應(yīng)和光整流效應(yīng)的研究工作,并將鍺材料的Franz-Keldysh效應(yīng)和載流子色散效應(yīng)作為廣義電光效應(yīng)進(jìn)行了理論研究。這些研究工作為拓展硅和鍺材料在光電子學(xué)及非線性光學(xué)領(lǐng)域中的應(yīng)用提供了實(shí)驗(yàn)和理論依據(jù)。論文的主要研究?jī)?nèi)容及取得的主要研究結(jié)果如下:(1)基于經(jīng)典非線性極化理論,對(duì)硅和鍺材料晶面表層中電場(chǎng)誘導(dǎo)的Pockels效應(yīng)和光整流效應(yīng)進(jìn)行了理論分析。測(cè)量了Si(001)和Si(110)晶面表層中的Pockels信號(hào)和光整流信號(hào)。Pockels信號(hào)與外加調(diào)制電壓呈良好的線性關(guān)系,比Kerr信號(hào)大得多;光整流信號(hào)隨線偏振光的偏振方位角呈周期為π的余弦變化關(guān)系。這些實(shí)驗(yàn)結(jié)果與理論預(yù)期符合得很好。利用光整流信號(hào)隨線偏振光偏振方位角變化的擬合函數(shù),計(jì)算了Si(001)、Si(110)晶面表層中等效二階極化率張量元的比值。(2)研究了Si(001)和Si(110)晶面表層中光整流信號(hào)沿晶面法線方向上的分布,證明光整流信號(hào)大小與硅表面性質(zhì)是密切相關(guān)的。建立了光整流信號(hào)與表層中的自建電場(chǎng)及光波電場(chǎng)關(guān)系的理論模型,用自建電場(chǎng)與高斯光束光波電場(chǎng)的重疊積分解釋了光整流信號(hào)的分布結(jié)果,理論模型與實(shí)驗(yàn)數(shù)據(jù)很好地符合。證明了利用光整流效應(yīng)和Pockels效應(yīng)研究硅晶面表層中自建電場(chǎng)強(qiáng)度與分布、空間電荷區(qū)寬度等表面性質(zhì)的可行性。此外,還對(duì)Si(001)和Si(110)晶面表層的二階非線性性質(zhì)進(jìn)行了比較。(3)首次研究了Ge(001)、Ge(110)晶面表層中電場(chǎng)誘導(dǎo)的光整流效應(yīng),測(cè)量了光整流信號(hào)隨線偏振光偏振方位角的關(guān)系,以及光整流信號(hào)沿晶面法線方向上的分布。利用(2)中所述的理論模型也能很好地解釋Ge(001)與Ge(110)晶面表層中光整流分布的實(shí)驗(yàn)結(jié)果。證明利用光整流效應(yīng)研究晶面表層性質(zhì)的方法對(duì)其它具有反演對(duì)稱性的材料也適用。此外,還對(duì)Ge(111)晶面表層中電場(chǎng)誘導(dǎo)的Pockels效應(yīng)和光整流效應(yīng)進(jìn)行了初步研究。(4)將鍺的Franz-Keldysh效應(yīng)和載流子色散效應(yīng)作為廣義電光效應(yīng)進(jìn)行了系統(tǒng)的理論研究。給出了不同波長(zhǎng)下鍺材料的吸收系數(shù)改變量、折射率改變量與電場(chǎng)強(qiáng)度,以及與載流子濃度改變量之間關(guān)系的理論公式。結(jié)果表明,載流子濃度的變化會(huì)引起鍺材料的折射率的顯著改變,因而載流子色散效應(yīng)有望作為鍺基光調(diào)制器的潛在工作機(jī)制。
[Abstract]:Silicon and germanium, both of the first generation semiconductor materials, have been widely used in the field of microelectronics and optoelectronic technology. It is transparent in 1.3 渭 m and 1.55 渭 m communication bands, so it is widely used in the field of integrated optics and optoelectronics. In recent years, germanium materials have good compatibility with silicon CMOS process. And has good transmission to the infrared light, can extend the existing communication wavelength to the mid-infrared band, so the application of germanium based optoelectronic devices in silicon-based optoelectronics has also attracted people's attention. In this thesis, the Pockels effect and optical rectification effect in the surface layer of silicon and germanium are studied. The Franz-Keldysh effect and carrier dispersion effect of germanium are studied theoretically as generalized electro-optic effects. These studies aim to expand the optoelectronics and nonlinear optics of silicon and germanium materials. The application in the field provides experimental and theoretical basis. The main research contents and the main results obtained are as follows:. (. 1) based on classical nonlinear polarization theory. The Pockels effect and optical rectification effect induced by electric field in the surface layer of silicon and germanium are theoretically analyzed. There is a good linear relationship between Pockels signal and optical rectifier signal. Pockels signal in the surface of crystal surface and the applied modulation voltage. The signal is much larger than the Kerr signal. The polarization azimuth of the optical rectifier signal varies with the polarization azimuth angle of the line polarized light. These experimental results are in good agreement with the theoretical expectation. The fitting function of the optical rectifier signal with the polarization azimuth angle of the line polarized light is obtained. . The Si-001) is calculated. The ratio of equivalent second-order polarizability Zhang Liang element in the surface layer of Si-110) and the distribution of optical rectifier signal along the normal direction of crystal plane are studied. It is proved that the size of the optical rectifier signal is closely related to the surface properties of silicon. The theoretical model of the relationship between the optical rectifier signal and the self-built electric field and the photowave electric field in the surface layer is established. The distribution of optical rectifier signal is explained by the overlap integral of self-built electric field and Gao Si beam light wave electric field. The theoretical model is in good agreement with the experimental data. It is proved that the intensity and distribution of self-built electric field in the surface layer of silicon crystal surface are studied by using optical rectification effect and Pockels effect. The feasibility of surface properties such as the width of space charge region. The second order nonlinear properties of the surface layer of Si-001) and Si-110) have been studied for the first time by comparing the second-order nonlinear properties of the surface layer of Si-001) and Si-110). The optical rectification effect induced by electric field in the surface layer of GE _ (110) crystal plane is measured. The relationship between the polarization azimuth of the optical rectifier signal and the polarization of the line polarized light is measured. And the distribution of optical rectifier signal along the normal direction of crystal plane. The experimental results of optical rectifying distribution in the surface layer of crystal plane prove that the method of using optical rectification effect to study the properties of surface layer of crystal plane is also suitable for other materials with inverse symmetry. The Pockels effect and optical rectification effect induced by electric field in the surface layer of Gei _ (111) are also studied. The Franz-Keldysh effect and carrier dispersion effect of germanium as generalized electro-optic effects are systematically studied. The change of absorption coefficient of germanium materials at different wavelengths is given. The theoretical formula of the relationship between refractive index change and electric field intensity and carrier concentration change. The results show that the change of carrier concentration can cause significant change of refractive index of germanium material. Therefore, carrier dispersion effect is expected to be the potential working mechanism of germanium based optical modulator.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN304

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