本文關(guān)鍵詞： 碲鎘汞光伏器件 暗電流 亞表面損傷 γ輻照效應(yīng) 浸沒(méi)透鏡　出處：《中國(guó)科學(xué)院研究生院(上海技術(shù)物理研究所)》2016年博士論文　論文類(lèi)型：學(xué)位論文

【摘要】：本論文密切聯(lián)系目前的航天應(yīng)用需求,針對(duì)航天應(yīng)用中的重要化合物半導(dǎo)體光電器件—碲鎘汞光伏器件的制備工藝和暗電流特性展開(kāi)了相關(guān)的研究。碲鎘汞光伏器件的暗電流特性是影響器件性能的關(guān)鍵因素。論文中在對(duì)碲鎘汞光伏器件暗電流的物理機(jī)制進(jìn)行分析的基礎(chǔ)上,就制備擴(kuò)散電流限制的器件為目標(biāo),討論了器件優(yōu)化設(shè)計(jì)中的表面復(fù)合速率的影響和p型碲鎘汞材料摻雜濃度的選擇。針對(duì)大面積光伏器件中耗盡區(qū)太大導(dǎo)致的暗電流過(guò)大現(xiàn)象,討論了子像元結(jié)構(gòu)的應(yīng)用可行性,通過(guò)短波和長(zhǎng)波兩個(gè)波段子像元結(jié)構(gòu)大面積光伏器件的制備,發(fā)現(xiàn)若器件工作于體電流限制下,子像元結(jié)構(gòu)在降低器件暗電流方面表現(xiàn)出明顯的優(yōu)勢(shì),并提出了漏電體積這一參量來(lái)對(duì)不同子像元結(jié)構(gòu)的暗電流抑制效果進(jìn)行對(duì)比評(píng)價(jià)。當(dāng)器件工作于表面漏電流限制的范圍時(shí),由子像元結(jié)構(gòu)引入的過(guò)多邊界而導(dǎo)致的表面漏電會(huì)成為影響器件暗電流的決定性因素,此時(shí)子像元結(jié)構(gòu)器件的暗電流反而會(huì)更大。分析了短波光伏器件制備中電極工藝的金屬-碲鎘汞接觸特性。發(fā)現(xiàn)同樣的接觸金屬結(jié)構(gòu)在不同的溫度下會(huì)表現(xiàn)出不同的接觸特性,并利用激光束誘導(dǎo)電流(LBIC)方法掃描了不同溫度下器件電極區(qū)的變化;通過(guò)理論分析認(rèn)為高溫下p型碲鎘汞形成歐姆接觸是由熱發(fā)射電流和耗盡區(qū)復(fù)合電流共同作用的結(jié)果,而n型碲鎘汞則主要是場(chǎng)發(fā)射所致;給出了碲鎘汞光伏器件制備中電極工藝的改進(jìn)方向,即對(duì)于n型電極,可以通過(guò)增加n型損傷而形成歐姆特性接觸,對(duì)于p型電極一方面可以通過(guò)增加一個(gè)高濃度p型摻雜區(qū)來(lái)實(shí)現(xiàn),另一方面也可以通過(guò)增加金屬-碲鎘汞Schottky結(jié)耗盡區(qū)中的復(fù)合漏電流來(lái)實(shí)現(xiàn)。分析了長(zhǎng)波碲鎘汞光伏器件測(cè)試工藝中背景輻射的影響。由于器件工作波段接近背景輻射的峰值,背景輻射在器件中會(huì)產(chǎn)生大量的光生載流子而影響器件的性能,提出了光生載流子的等效熱激發(fā)模型(低反向偏壓下),并結(jié)合光電流碰撞電離倍增模型(高反向偏壓下),對(duì)于反向偏壓下通過(guò)pn結(jié)的電流進(jìn)行了有效的解釋和擬合。背景輻射的直接影響是導(dǎo)致器件響應(yīng)信號(hào)下降和噪聲增加,對(duì)器件進(jìn)行背景屏蔽后光電性能會(huì)明顯改善。用橢圓偏振光譜方法研究了體晶材料碲鎘汞光伏器件制備中拋光工藝所形成的亞表面損傷層,通過(guò)有效介質(zhì)模型(EMA)擬合發(fā)現(xiàn)化學(xué)機(jī)械拋光會(huì)在碲鎘汞表面形成15微米左右的亞表面損傷層,而溴拋光工藝所形成的亞表面損傷層只有幾微米。通過(guò)MIS器件的制備研究了不同的拋光工藝對(duì)器件表面/界面特性的影響,發(fā)現(xiàn)化學(xué)機(jī)械拋光得到的MIS器件的鈍化層固定正電荷密度為1.2×1012cm-2,而溴拋光工藝器件的鈍化層固定正電荷密度只有2.4×1011cm-2。通過(guò)正向和反向電壓掃描電容測(cè)試,得到對(duì)于化學(xué)機(jī)械拋光工藝制備的器件,其慢界面態(tài)密度為3.76×1010cm-2eV-1,而溴拋光樣品為1.65×1010cm-2 eV-1。通過(guò)變結(jié)面積陣列器件的制備研究了不同的拋光工藝對(duì)器件暗電流特性的影響,發(fā)現(xiàn)對(duì)于化學(xué)機(jī)械拋光工藝制備的器件,暗電流以表面漏電為主,溴拋光工藝器件則主要由體效應(yīng)決定;同樣面積的器件,溴拋光工藝制備的器件具有更低的暗電流,噪聲譜測(cè)試表明其噪聲更小。采用反應(yīng)耦合等離子體(ICP)工藝研究了氫鈍化降低碲鎘汞光伏器件暗電流的物理機(jī)制。發(fā)現(xiàn)氫鈍化后碲鎘汞光伏器件n區(qū)的電子濃度降低,p區(qū)的空穴濃度增加。通過(guò)將氫原子鈍化區(qū)域擴(kuò)展到離子注入?yún)^(qū)之外,發(fā)現(xiàn)對(duì)離子注入?yún)^(qū)之外的區(qū)域進(jìn)行氫鈍化也會(huì)明顯降低器件的暗電流。暗電流擬合分析表明氫原子鈍化使得器件耗盡區(qū)中載流子產(chǎn)生-復(fù)合壽命增加從而導(dǎo)致暗電流變小。通過(guò)對(duì)中波碲鎘汞光伏器件進(jìn)行實(shí)時(shí)γ輻照,研究了其動(dòng)態(tài)γ輻照效應(yīng),發(fā)現(xiàn)器件表現(xiàn)出兩種典型的輻照效應(yīng):電離效應(yīng)和位移效應(yīng)。電離效應(yīng)反映在輻照過(guò)程中產(chǎn)生了類(lèi)似光電流的零偏電流,位移效應(yīng)則通過(guò)輻照過(guò)程中器件串聯(lián)電阻的增加來(lái)體現(xiàn)出來(lái),并利用少子引入和多子去除兩輻照損傷能級(jí)模型進(jìn)行了定性解釋。同時(shí)發(fā)現(xiàn)氫鈍化工藝對(duì)于器件的電離效應(yīng)沒(méi)有明顯的改善作用,但卻有助于改善器件的輻照位移效應(yīng)。研制了可以在室溫及近室溫條件下工作的具有集成浸沒(méi)透鏡結(jié)構(gòu)的碲鎘汞中波紅外單元光伏器件。直徑為1.5mm高度為0.97mm的超半球結(jié)構(gòu)浸沒(méi)透鏡是通過(guò)在碲鋅鎘襯底上采用單點(diǎn)金剛石切削工藝加工得到,帶有集成浸沒(méi)透鏡的器件其黑體探測(cè)率增加了4倍左右;對(duì)于pn結(jié)電學(xué)面積為180μm×180μm的器件,LBIC掃描表明其光學(xué)響應(yīng)區(qū)域接近1300μm×1300μm。
[Abstract]:This paper closely links the current aerospace applications, the preparation process of space in the application of important compound semiconductor optoelectronic devices - HgCdTe photovoltaic devices and dark current characteristics research is launched. The dark current characteristics of HgCdTe photovoltaic devices are the key factors affecting the performance of the device. This paper analyzed the physical mechanism of HgCdTe the dark current of photovoltaic device, device for preparing diffusion current limit as the goal, discusses the selection of doping concentration effect of surface recombination rate in the design and P type HgCdTe devices for optimization. Too large to large area photovoltaic devices in the depletion region of dark current phenomenon, discussed the feasibility of the application of sub pixel the structure of the short wave and long wave band two sub pixel structure for large area photovoltaic device fabrication, if the device works in current limit, like The dual structure in the reduced dark current shows its advantages, and puts forward the leakage volume parameter to evaluate the different sub pixel structure on the dark current suppression effect. When the device works in the range of surface leakage current restrictions, leading to excessive surface leakage and introduced by the boundary pixel structure will become the decisive factors influencing the dark current, the dark current sub-pixel structure devices would be more big. Analysis of the electrode preparation technology for metal - HF photovoltaic device of HgCdTe contact characteristics. It is found that the contact metal structure will show the same contact characteristics at different temperatures, and using laser beam induced current (LBIC) method scanning devices change electrode area at different temperature; through theoretical analysis that the P type high temperature HgCdTe ohmic contact is formed by thermal emission current and the depletion region complex Current common result, while the N type is mainly caused by field emission of HgCdTe; gives the improvement direction of electrode HgCdTe photodiodes in the preparation process, the N type electrode, can form ohmic contact characteristic of the increase of N type P type electrode for damage, one hand can be achieved by adding a high the concentration of P type doping area, on the other hand can also be achieved by increasing the metal HgCdTe Schottky junction composite leakage current in the depletion region. Analysis of the impact of the background of long wave radiation in the photovoltaic device testing technology. As the peak device close to the band of background radiation, background radiation in the device will produce carrier and impact device the performance of a large number of light excitation model equivalent heat photocarrier proposed (low reverse bias), and combined with the photocurrent multiplication model of impact ionization (high reverse bias), the anti To the bias current through the PN junction were explained and fitting effectively. The influence of background radiation is directly lead to the increase of device response signal and noise decreased, the background of the shield on the device after the photoelectric performance will be significantly improved. The sub surface crystalline material tellurium cadmium mercury photovoltaic device in the preparation of polishing process formed by the damage layer study on the spectroscopic ellipsometry method, through effective medium model fitting (EMA) found that chemical mechanical polishing will be formed around 15 micron sub surface damage layer in HgCdTe surface, while bromine polishing process formed by the sub surface damage layer of only a few microns. Through the MIS fabrication of different polishing effect on device surface / interface, MIS device for chemical mechanical polishing of the passivation layer fixed positive charge density is 1.2 * 1012cm-2, and the bromine polishing process device passivation layer fixed positive charge density Only 2.4 * 1011cm-2. by forward and reverse voltage test device for scanning capacitance, process for chemical mechanical polishing preparation, the slow interface states density is 3.76 * 1010cm-2eV-1, and bromine polished samples of 1.65 * 1010cm-2 eV-1. through the junction area array preparation effects of different polishing processes on the dark current characteristics of the device the discovery process of chemical mechanical polishing device for preparation of the dark current to the surface leakage, bromine polishing device is mainly determined by body effect; the same area of the device, the device fabricated with bromine polishing dark current has lower noise spectrum, less noise. The test results show that the reaction coupled plasma (ICP the process of hydrogen passivation) to reduce the physical mechanism of HgCdTe photovoltaic dark current. To reduce the electron concentration of HgCdTe photovoltaic devices n region found that hydrogen passivation, hole concentration of P area increased And through the hydrogen passivation region is extended to the ion implantation area, found the area outside of the ion implanted region of hydrogen passivation will significantly reduce the dark current. The dark current regression analysis show that hydrogen passivation makes depletion region carrier generation recombination lifetime increase resulting in dark current through the smaller. Real time gamma irradiation on MW HgCdTe photovoltaic devices, studies the dynamic effects of gamma irradiation, found that the device exhibits two typical irradiation effects: ionization and displacement. The ionization effect produces zero bias current reflect similar photocurrent during irradiation, displacement effect by increasing the irradiation process in series resistance of the device to reflected, and less use of sub introduction and removal of two multi level model of radiation damage are explained qualitatively. At the same time that the hydrogen passivation process for ionization device no There is obvious improvement, but helps to improve the displacement effect of irradiation device is developed. The infrared HgCdTe photovoltaic device unit can be integrated immersion lens structure has work at room temperature and near room temperature. The diameter is 1.5mm the height of the structure of the 0.97mm super hemisphere immersion lens is obtained by using single point diamond turning in the process of CdZnTe substrate, device with integrated immersion lens of the blackbody detection rate increased by 4 times; the PN junction area of 180 mu m electrical device * 180 m, LBIC scan showed that the optical response region close to 1300 m * 1300 m.

【學(xué)位授予單位】：中國(guó)科學(xué)院研究生院(上海技術(shù)物理研究所)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類(lèi)號(hào)】：TN215

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