本文關(guān)鍵詞：新型可集成橫向功率器件以及分立縱向功率器件的研究　出處：《電子科技大學(xué)》2016年博士論文　論文類(lèi)型：學(xué)位論文

  更多相關(guān)文章： 智能功率集成電路 p-LDMOS SJ-UMOS 反向恢復(fù)電荷 RC-IGBT

【摘要】：電力電子技術(shù)是電能轉(zhuǎn)換的關(guān)鍵技術(shù)。它將一種類(lèi)型的電能轉(zhuǎn)換成另一種類(lèi)型的電能,從而實(shí)現(xiàn)各種場(chǎng)合的應(yīng)用。電力電子系統(tǒng)最為關(guān)鍵的元器件就是功率半導(dǎo)體器件。隨著電力電子技術(shù)的不斷發(fā)展,集成化、智能化、小型化成為了主要的發(fā)展方向。智能功率集成電路應(yīng)運(yùn)而生,它將控制電路,驅(qū)動(dòng)電路,保護(hù)電路以及功率半導(dǎo)體器件等集成到一個(gè)芯片里面,從而增加了系統(tǒng)的智能度和集成度。為了將功率器件集成到同一個(gè)芯片里,橫向功率器件是最常見(jiàn)和最可行的選擇。然而,由于在橫向功率器件中,電流是橫向流過(guò)器件表面附近,所以其電流密度較小,導(dǎo)通功耗較大,通常比較適用于較低電壓和較小功率的應(yīng)用場(chǎng)合。相比于橫向功率器件,分立縱向功率器件電流密度大,導(dǎo)通壓降低,更適合于高電壓,高功率場(chǎng)合的應(yīng)用。同時(shí),為了系統(tǒng)的小型化等因素,通常也需要將兩種或以上的分立器件集成或封裝到一個(gè)芯片或模塊中,例如逆導(dǎo)型絕緣柵雙極性晶體管(Reverse Conducting-Insulated Gate Bipolar Transistor:RC-IGBT)。由此可見(jiàn)橫向和縱向功率半導(dǎo)體器件都有著各自的發(fā)展和應(yīng)用場(chǎng)合。鑒于以上分析,基于陳星弼教授提出的新型高低側(cè)半導(dǎo)體器件以及復(fù)合緩沖層(后來(lái)稱(chēng)為超結(jié):Super-Junction),本文主要對(duì)橫向功率器件和縱向功率器件進(jìn)行了研究和設(shè)計(jì)。本文的主要工作體現(xiàn)在第二章至第五章,其中第二至第三章為橫向功率器件,第四至第五章為縱向功率器件。主要內(nèi)容為:1.研究了橫向功率半導(dǎo)體器件在高壓集成電路中的應(yīng)用,并提出了一種新型的p型橫向雙擴(kuò)散金屬-氧化物-半導(dǎo)體場(chǎng)效應(yīng)晶體管(Lateral Double-diffused MetalOxide-Semiconductor field effect transistor:p-LDMOS)。該新型p-LDMOS被命名為“贗p-LDMOS”。該結(jié)構(gòu)在導(dǎo)電時(shí)不僅利用空穴進(jìn)行導(dǎo)電,同時(shí),通過(guò)一個(gè)簡(jiǎn)單的自動(dòng)控制電路還實(shí)現(xiàn)了電子層導(dǎo)電。由于電子遷移率約是空穴的3倍,從而,該pLDMOS的比導(dǎo)通電阻(specific on-resistance:R_(on,sp))被極大地降低。2.基于上述“贗p-LDMOS”的研究,本文提出了一種主要應(yīng)用在半橋或全橋輸出電路中的改進(jìn)的反型層“贗p-LDMOS”。在改進(jìn)的結(jié)構(gòu)中,首次成功引入了電子的反型層進(jìn)行導(dǎo)電,從而使得該“贗p-LDMOS”的比導(dǎo)通電阻R_(on,sp)進(jìn)一步銳減。改進(jìn)后的“贗p-LDMOS”的導(dǎo)電能力與現(xiàn)有的采用積累層導(dǎo)電的n-LDMOS電流能力相當(dāng)。3.提出了一種體二極管具有低反向恢復(fù)電荷(Reverse Recovery Charge:Q_(rr))的超結(jié)U型柵-金屬-氧化物-半導(dǎo)體場(chǎng)效應(yīng)晶體管(Super-Junction-U-shaped gate MetalOxide-Semiconductor field effect transistor:SJ-UMOSFET或SJ-UMOS)。在功率MOSFET的大部分應(yīng)用中,通常都會(huì)有一個(gè)反并聯(lián)的二極管用于電感續(xù)流。由于MOSFET的結(jié)構(gòu)特性,其本身就帶有一個(gè)反并聯(lián)的二極管,稱(chēng)為體二極管。傳統(tǒng)的SJ-UMOS的體二極管由于存在漂移區(qū)的P柱向N柱注入空穴,使得體二極管的反向恢復(fù)電荷很大,這就極大地增加了系統(tǒng)功耗。本文提出一種新型的SJ-UMOS,該結(jié)構(gòu)成功阻止了P柱向N柱的空穴注入,從而極大地降低了體二極管的反向恢復(fù)電荷。4.提出了一種新型的RC-IGBT。同功率MOSFET一樣,IGBT在多數(shù)應(yīng)用場(chǎng)合需要一個(gè)反并聯(lián)的二極管用于電感續(xù)流。在同一芯片中集成了反并聯(lián)體二極管的IGBT稱(chēng)為RC-IGBT。傳統(tǒng)的RC-IGBT反向?qū)щ姇r(shí)存在嚴(yán)重的電流不均勻現(xiàn)象,從而存在體二極管反向恢復(fù)過(guò)程容易失效等缺點(diǎn)。本文提出的RC-IGBT不僅克服了反向?qū)щ姇r(shí)電流不均勻的缺點(diǎn),同時(shí)還具有更好的導(dǎo)通壓降(V_(on))與關(guān)斷損耗(E_(off))的折中關(guān)系,而且體二極管的反向恢復(fù)電荷更低,反向恢復(fù)損耗更小。
[Abstract]:Power electronic technology is the key technology of power conversion. It converts one type of electric energy into another type of electric energy, so it can be applied in various situations. The most important component of the power electronic system is the power semiconductor device. With the continuous development of power electronics technology, integrated, intelligent, and small into the main direction of development. Intelligent power integrated circuit arises at the historic moment. It integrates control circuit, drive circuit, protection circuit and power semiconductor device into a chip, thus increasing the intelligence and integration of the system. In order to integrate power devices into the same chip, lateral power devices are the most common and most feasible choice. However, because transverse current flows across the device surface in transverse power devices, its current density is relatively small, and its power consumption is large. It is usually suitable for applications with low voltage and low power. Compared with the lateral power device, the vertical power device has large current density and low conduction pressure, which is more suitable for high voltage and high power applications. Meanwhile, for the sake of system miniaturization and other factors, it is usually necessary to integrate two or more discrete devices into a chip or module, such as Reverse Conducting-Insulated Gate Bipolar Transistor:RC-IGBT. It can be seen that both horizontal and longitudinal power semiconductor devices have their own development and application. In view of the above analysis, based on the new high and low side semiconductor devices and composite buffer layer proposed by Prof. Chen Xingbi (later known as super junction: Super-Junction), the transverse power devices and longitudinal power devices were studied and designed. The main work of this paper is from second chapters to fifth chapters, of which second to third chapters are horizontal power devices, and the fourth to fifth are longitudinal power devices. The main contents are as follows: 1. the application of lateral power semiconductor devices in high voltage integrated circuits, and puts forward a new type of P lateral double diffused metal oxide semiconductor field effect transistor (Lateral Double-diffused MetalOxide-Semiconductor field effect transistor:p-LDMOS). The new p-LDMOS is named "pseudo p-LDMOS". The structure is conductive not only by hole, but also by a simple automatic control circuit. Since the electron mobility is about 3 times that of a hole, the specific resistance (specific on-resistance:R_ (on, SP) of the pLDMOS) is greatly reduced. 2. based on the above "pseudopotential" research, a modified reverse layer "pseudo p-LDMOS", which is mainly used in the output circuit of half bridge or full bridge, is proposed in this paper. In the improved structure, the electronic inversion layer is successfully introduced for the first time, so that the "pseudo p-LDMOS" is further reduced than the conduction resistance R_ (on, SP). The improved electrical conductivity of the "pseudo p-LDMOS" is equivalent to the current capacity of the existing n-LDMOS electric current using the accumulating layer. 3. proposed a body diode reverse recovery charge is low (Reverse Recovery Charge:Q_ (RR)) of the super junction U type gate metal oxide semiconductor field effect transistor (Super-Junction-U-shaped gate MetalOxide-Semiconductor field effect transistor:SJ-UMOSFET or SJ-UMOS). In most applications of power MOSFET, an anti - parallel diode is usually used for inductor flow. Due to the structural characteristics of MOSFET, it itself has an anti - parallel diode, called a body diode. Due to the existence of P column in the drift region, the traditional SJ-UMOS diode is injected into the N column, which makes the reverse recovery charge of the TDC diode large, which greatly increases the power consumption of the system. In this paper, a new type of SJ-UMOS is proposed, which successfully prevents the hole injection from the P column to the N column, thus greatly reducing the reverse charge of the body diode. 4. a new type of RC-IGBT is proposed. Like power MOSFET, IGBT needs an anti - parallel diode for inductor flow in most applications. The IGBT, which integrates the antiparallel diode in the same chip, is called RC-IGBT. In the traditional RC-IGBT reverse conduction, there is a serious current inhomogeneous phenomenon, so the reverse recovery process of the body diode is easy to fail and so on. The RC-IGBT proposed in this paper not only overcomes the disadvantage of uneven current in reverse conduction, but also has a better trade-off relationship between conduction voltage drop (V_ (on)) and turn off loss (E_ (off)), and the reverse recovery charge of body diode is lower, and the reverse recovery loss is smaller.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類(lèi)號(hào)】：TN386;TN322.8

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