本文選題：濾波器 + BAW��； 參考：《西南科技大學(xué)》2017年碩士論文

【摘要】：由FBAR組成的BAW濾波器能夠滿足目前高性能射頻前端濾波的要求,是一種全新的射頻濾波器解決方案�；赬X機(jī)構(gòu)給出的技術(shù)指標(biāo),結(jié)合工藝約束條件,設(shè)計(jì)了一個(gè)滿足各項(xiàng)指標(biāo)的,中心頻率為2.460 GHz,帶寬為41MHz,帶內(nèi)插損為-1.154 d B,帶內(nèi)紋波為0.9 d B,帶外抑制為-42.5d B@2.390 GHz;-45.5d B@2.500 GHz的S波段窄帶帶通BAW濾波器。所設(shè)計(jì)的濾波器的各項(xiàng)指標(biāo)值均優(yōu)于設(shè)計(jì)指標(biāo)中的要求。設(shè)計(jì)的濾波器具有較低的帶內(nèi)插損、較高的帶外抑制,能夠滿足當(dāng)前S波段無(wú)線通信的應(yīng)用。具體工作包括:在第三章中,通過(guò)調(diào)節(jié)電極/壓電層厚度設(shè)計(jì)了一個(gè)具有較高k2eff,同時(shí)可以獲得較小平面尺寸的FBAR各膜層厚度參數(shù)。通過(guò)電極變跡的方法設(shè)計(jì)了各FBAR形狀,該方法能夠抑制寄生模式,提高FBAR的Q值。在第四章中,使用Mason模型設(shè)計(jì)并優(yōu)化得到了一個(gè)滿足各項(xiàng)指標(biāo)(帶寬、中心頻率、帶外抑制和帶內(nèi)插損以及紋波)的S波段BAW濾波器的結(jié)構(gòu)參數(shù)。并通過(guò)一個(gè)電感有效改善了BAW濾波器的帶外抑制。在第五章中,設(shè)計(jì)并驗(yàn)證了一個(gè)BAW濾波器的布局結(jié)構(gòu)。該布局結(jié)構(gòu)能夠減少寄生電感、寄生電容、歐姆損耗對(duì)BAW濾波器性能的影響。為了評(píng)估使用Mason模型設(shè)計(jì)的S波段BAW濾波器的性能,建立了BAW濾波器的聲-電磁協(xié)同仿真模型。由于仿真得到的帶內(nèi)紋波不滿足指標(biāo)要求,因此重新設(shè)計(jì)了BAW濾波器的結(jié)構(gòu)參數(shù),直到成功通過(guò)聲-電磁協(xié)同仿真模型的性能驗(yàn)證。根據(jù)該布局結(jié)構(gòu),設(shè)計(jì)了BAW濾波器的加工工藝流程以及光刻掩膜版圖。主要?jiǎng)?chuàng)新點(diǎn)為:1.研究得到了“當(dāng)電感串聯(lián)在面積最大的并聯(lián)FBAR支路,使用的電感值最小”的結(jié)論。2.提出并驗(yàn)證了一種BAW濾波器的布局準(zhǔn)則及方法。3.建立了BAW濾波器的聲-電磁協(xié)同仿真模型。
[Abstract]:The BAW filter composed of FBAR can meet the requirements of high performance RF front-end filter and is a new RF filter solution. Based on the technical index given by XX mechanism and combined with the process constraint condition, a new method is designed to meet the requirements. The center frequency is 2.460 GHz, the bandwidth is 41 MHz, the band insertion loss is -1.154 dB, the in-band ripple is 0.9 dB, and the out-of-band suppression is -42.5 dB 2.390 GHz -45.5 dB 2.500 GHz narrow band bandpass BAW filter. All the index values of the designed filter are better than the requirements of the design index. The designed filter has lower band interpolation loss and higher out-of-band suppression, which can meet the current S-band wireless communication applications. The main work includes: in chapter 3, the thickness parameters of FBAR films with high k2effs are designed by adjusting the thickness of the electrode / piezoelectric layer, and the thickness parameters of each layer of FBAR are obtained at the same time. The shapes of FBAR were designed by the method of electrode apodization. This method can suppress the parasitic mode and increase the Q value of FBAR. In chapter 4, a S-band BAW filter is designed and optimized by using Mason model, which meets the requirements of bandwidth, central frequency, out-of-band suppression and insertion loss, and ripple. An inductor is used to effectively improve the out-of-band suppression of BAW filters. In chapter 5, we design and verify the layout of a BAW filter. The structure can reduce the influence of parasitic inductance, parasitic capacitance and ohmic loss on the performance of BAW filter. In order to evaluate the performance of S-band BAW filter designed with Mason model, the acousto-electromagnetic cooperative simulation model of BAW filter is established. Because the in-band ripple obtained by simulation does not meet the requirements of the target, the structural parameters of the BAW filter are redesigned until the performance of the acousto-electromagnetic cooperative simulation model is successfully verified. According to the layout, the processing process and photolithographic mask layout of BAW filter are designed. The main innovation point is: 1. The conclusion that "the inductance is minimum when the inductance is in series at the parallel FBAR branch with the largest area" is obtained. A layout criterion and method of BAW filter. 3. The acousto-electromagnetic cooperative simulation model of BAW filter is established.
【學(xué)位授予單位】：西南科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN713

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9 劉s，

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