本文關(guān)鍵詞： 熱光效應(yīng)器件 加熱互連線(xiàn) 丟失物缺陷 有限元仿真　出處：《湖北工業(yè)大學(xué)》2017年碩士論文　論文類(lèi)型：學(xué)位論文

【摘要】：隨著金屬薄膜制備技術(shù)和聚合物材料學(xué)科的發(fā)展,熱光效應(yīng)光電器件因其獨(dú)特的工作原理和諸多優(yōu)勢(shì)而備受關(guān)注。然而,由于器件小型化和集成度的不斷提高,熱光效應(yīng)器件加熱互連線(xiàn)的尺寸已達(dá)到納米級(jí)別,增加制造工藝的難度和缺陷發(fā)生的概率,極大的影響了器件的可靠性。本文基于熱光效應(yīng)器件的工作原理,針對(duì)器件失效的薄弱環(huán)節(jié)——加熱互連線(xiàn),結(jié)合理論研究、仿真分析、試驗(yàn)結(jié)果,探究丟失物缺陷對(duì)互連線(xiàn)壽命和器件性能的影響。另外,針對(duì)光纖通道、互連線(xiàn)不斷增加情況,探究多根互連線(xiàn)之間的交互作用,并提出優(yōu)化意見(jiàn)。首先,結(jié)合熱光器件的工作環(huán)境,基于故障物理學(xué)、試驗(yàn)研究,確定其失效機(jī)理為以電遷移為主的多物理場(chǎng)的共同作用。運(yùn)用電遷移理論分析丟失物缺陷對(duì)多物理場(chǎng)下各種遷移機(jī)制的影響,與互連線(xiàn)壽命、失效位置之間的關(guān)系。為接下來(lái)的仿真模型創(chuàng)建和試驗(yàn)設(shè)計(jì)提供依據(jù)。其次,根據(jù)理論研究,運(yùn)用ANSYS有限元仿真軟件建立以硅為襯底的具有丟失物缺陷的互連線(xiàn)工作模式,通過(guò)熱-電耦合仿真結(jié)果,得出電流密度、溫度、溫度梯度分布,對(duì)比完好互連線(xiàn)相關(guān)參數(shù),明確丟失物缺陷大小和位置與互連線(xiàn)壽命和失效位置之間的關(guān)系。另外根據(jù)熱光效應(yīng)器件的實(shí)際結(jié)構(gòu),分析加熱互連線(xiàn)存在丟失物缺陷時(shí),聚合物光波導(dǎo)的溫度分布情況,多根互連線(xiàn)在不同間距下的交互作用。仿真結(jié)果表明:丟失物缺陷缺陷對(duì)互連線(xiàn)壽命和器件性能影響極大;互連線(xiàn)間距越小,交互作用越強(qiáng),在聚合物光波導(dǎo)中添加隔熱材料可有效改善交互作用、優(yōu)化器件尺寸。最后,制備互連線(xiàn)試驗(yàn)樣品,運(yùn)用光鏡等檢測(cè)設(shè)備觀(guān)測(cè)樣品,并對(duì)樣品缺陷類(lèi)型經(jīng)行分類(lèi)。針對(duì)具有丟失物缺陷的樣品進(jìn)行加速壽命試驗(yàn),試驗(yàn)結(jié)果表明:(1)互連線(xiàn)直線(xiàn)部分存在丟失物缺陷時(shí),失效位置也在缺陷處;(2)丟失物缺陷越大,壽命越短;(3)對(duì)于一定深度以?xún)?nèi)的劃痕缺陷,失效是有電遷移導(dǎo)致的,超過(guò)一定范圍失效形式表現(xiàn)為過(guò)電應(yīng)力。
[Abstract]:With the development of metal thin film preparation technology and polymer materials, thermo-optical photovoltaic devices have attracted much attention due to their unique working principles and many advantages. However, due to the miniaturization of the devices and the continuous improvement of integration, The dimension of the heating interconnect of thermo-optical devices has reached the nanometer level, which increases the difficulty of manufacturing process and the probability of defect occurrence, which greatly affects the reliability of the devices. In view of the weak link of device failure, heating interconnect, combined with theoretical research, simulation analysis and test results, the influence of missing object defects on interconnect life and device performance is explored. This paper explores the interaction between multiple interconnects, and puts forward some suggestions for optimization. Firstly, combining with the working environment of thermo-optic devices, based on the fault physics, the experimental research is carried out. It is determined that the failure mechanism is the common action of the multi-physical field which is dominated by electromigration. The influence of the defects of the lost object on the various migration mechanisms under the multi-physical field is analyzed by using the electromigration theory, and the interconnect lifetime is also analyzed. The relationship between the failure locations provides the basis for the following simulation model creation and experimental design. Secondly, according to the theoretical research, the ANSYS finite element simulation software is used to establish the inter-connection operation mode with missing material defects based on silicon substrate. The current density, temperature and temperature gradient distribution are obtained by thermoelectric coupling simulation. The relationship between the size and position of the missing object defect and the life and failure position of the interconnect is clarified. According to the actual structure of the thermo-optic device, the temperature distribution of the polymer optical waveguide is analyzed when the missing material defect exists in the heating interconnect line. The simulation results show that the missing defect has a great influence on the interconnect life and device performance, and the smaller the interconnect distance, the stronger the interaction. Adding heat insulation material to polymer optical waveguide can effectively improve the interaction and optimize the device size. Finally, the interconnect test sample is prepared, and the sample is observed by optical microscope, etc. The accelerated life test for the sample with missing material defect shows that when there is a missing object defect in the linear part of the interconnection line, the failure position is also at the defect point and the loss defect is larger. The shorter the life is, the shorter the life is. For the scratch defect within a certain depth, the failure is caused by electric migration, and the form of failure beyond a certain range is overcurrent stress.
【學(xué)位授予單位】：湖北工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN405.97

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