本文關(guān)鍵詞：P型柵極高電子遷移率晶體管可靠性研究　出處：《浙江大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 氮化鎵 電荷俘獲 P型柵極高電子遷移率晶體管 可靠性

【摘要】：氮化鎵基高電子遷移率晶體管(HEMT)是實(shí)現(xiàn)高效節(jié)能與小型化、輕量化電力電子變換器的下一代功率器件。一方面這是由氮化鎵材料本身的優(yōu)異特性所決定的,如寬禁帶寬度(3.4 eV),高臨界擊穿電場(chǎng)(3500 kV/cm)。另一方面,鋁氮化鎵與氮化鎵異質(zhì)結(jié)的自發(fā)極化和壓電極化效應(yīng)可以在異質(zhì)結(jié)界面處形成高電子濃度(10~(13)cm~(-~2)),高電子遷移率(1~200cm~2/V·s)與高電子飽和漂移速度(3.0×10~7cm/s)的二維電子氣導(dǎo)電溝道。然而,鋁氮化鎵/氮化鎵異質(zhì)結(jié)結(jié)構(gòu)的HEMT通常是常通型器件,其閾值電壓范圍在-6 V到-2V。為了使HEMT能具有電路故障保護(hù)功能并與傳統(tǒng)硅基功率器件柵極驅(qū)動(dòng)IC兼容,需要實(shí)現(xiàn)增強(qiáng)型HEMT。全球科研工作者已提出多種實(shí)現(xiàn)增強(qiáng)型HEMT的技術(shù)手段,包括采用幾個(gè)納米厚的AlGaN勢(shì)壘層,級(jí)聯(lián)拓?fù)浣Y(jié)構(gòu),氟化物等離子體處理,肖特基柵極的柵極凹槽結(jié)構(gòu),金屬絕緣體氧化物柵極凹槽結(jié)構(gòu)(MIS)與P型柵極結(jié)構(gòu)。在這些方法中,MIS-HEMT是實(shí)現(xiàn)可同時(shí)具備高閾值電壓與高柵極電壓擺幅HEMT的可行方案。然而MIS-HEMT柵極氮化物/電介質(zhì)界面態(tài)的存在也帶來(lái)了相應(yīng)的可靠性問(wèn)題,例如器件閾值電壓的偏移。而P型柵極HEMT不僅可以實(shí)現(xiàn)高閾值電壓與高柵極電壓擺幅,同時(shí)還可以利用柵極空穴注入的電導(dǎo)調(diào)制效應(yīng)進(jìn)一步降低器件溝道導(dǎo)通電阻,這使其成為工業(yè)界與學(xué)術(shù)界研究者的關(guān)注熱點(diǎn)。近十年,P型柵極器件在高漏壓開(kāi)關(guān)條件下出現(xiàn)的電流崩塌或動(dòng)態(tài)導(dǎo)通電阻變化已經(jīng)得到了全世界研究者的深入研究,然而由P型HEMT柵極電流注入所導(dǎo)致的器件可靠性問(wèn)題仍有待進(jìn)一步研究。本文對(duì)商用P型柵極HEMT在不同大小柵極電壓應(yīng)力與不同器件溫度下無(wú)自發(fā)熱的導(dǎo)通電阻大小變化進(jìn)行了觀測(cè)分析。器件在額定柵極電壓應(yīng)力下導(dǎo)通電阻變化,閾值電壓的偏移以及耐壓能力的退化都指向了由于HEMT柵極區(qū)域電荷俘獲所引發(fā)的可靠性問(wèn)題。本文提出并詳述了 HEMT由于柵極區(qū)域空穴電子分別被施主陷阱與受主陷阱俘獲而導(dǎo)致器件溝道電導(dǎo)不穩(wěn)定的潛在機(jī)理,并通過(guò)器件仿真從能帶變化對(duì)此做了進(jìn)一步探究。
[Abstract]:Gallium nitride based high electron mobility transistor (HEMT) is an efficient energy saving and miniaturized transistor. The next generation of power devices for lightweight power electronic converters. On the one hand, this is determined by the excellent properties of gallium nitride materials, such as the wide bandgap width of 3.4 EV). A high critical breakdown electric field of 3500 kV / cm, on the other hand. The spontaneous polarization and piezoelectric polarization effects of Al Gallium nitride and Gallium nitride heterojunction can form high electron concentration (10 ~ (10) C ~ (13) C ~ (-1) cm ~ (-1) ~ (-1)) at the interface of the heterojunction. Two-dimensional electron gas conduction channel with high electron saturation drift velocity of 3.0 脳 10 ~ (7) cm ~ (-1) and 2 / 2 / V 路s of high electron mobility ~ (200) cm ~ (-1). Aluminum gallium nitride / gallium nitride heterojunction HEMT is usually a common type device. The threshold voltage ranges from -6 V to -2 V. in order to enable HEMT to have circuit fault protection function and compatible with traditional silicon based power device gate drive IC. It is necessary to realize enhanced HEMT. Researchers all over the world have put forward a variety of techniques to realize enhanced HEMT, including several nanometer-thick AlGaN barrier layers and cascaded topology. Fluoride plasma treatment, Schottky gate gate groove structure, metal insulator oxide gate groove structure (MISS) and P-type gate structure. In these methods. MIS-HEMT is a feasible scheme to realize both high threshold voltage and high gate voltage swing HEMT. However, the existence of MIS-HEMT gate nitride / dielectric interface state also brings about the corresponding results. The question of reliability. For example, the shift of device threshold voltage, and P-type gate HEMT can not only achieve high threshold voltage and high gate voltage swing. At the same time, the conductivity modulation effect of gate hole injection can be used to further reduce the channel on-resistance of the device, which makes it become the focus of attention of researchers in industry and academia. The current collapse or dynamic on-resistance change of P-type gate devices under the condition of high leakage voltage switch has been deeply studied by researchers all over the world. However, the reliability problems caused by P-type HEMT gate current injection still need to be further studied. In this paper, the commercial P-type gate HEMT is not spontaneous at different gate voltage stress and different device temperature. The change of the thermal on-resistance is observed and analyzed. The on-resistance of the device changes under the rated gate voltage stress. The shift of threshold voltage and the degradation of voltage resistance all point to the reliability problems caused by charge capture in HEMT gate region. The potential mechanism of channel conductance instability in HEMT is due to the capture of hole electrons in the gate region by the donor trap and the acceptor trap respectively. And through the device simulation from the energy band change to further explore this.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN386

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 ;Amantys加快在中國(guó)的發(fā)展[J];中國(guó)電子商情(基礎(chǔ)電子);2013年11期

2 ;高速柵極驅(qū)動(dòng)集成電路系列[J];電子制作;2005年11期

3 John Hargenrader;;應(yīng)用廣泛的車用柵極驅(qū)動(dòng)器[J];集成電路應(yīng)用;2013年05期

4 王志堅(jiān);;H橋IGBT柵極驅(qū)動(dòng)設(shè)計(jì)與應(yīng)用[J];太原科技;2009年01期

5 王瑞;;大功率IGBT柵極驅(qū)動(dòng)電路的研究[J];電氣自動(dòng)化;2014年03期

6 HenryE.Santana,冰;帶快速?gòu)?fù)位的光電隔離柵極驅(qū)動(dòng)[J];電子產(chǎn)品世界;1996年12期

7 李正中,孫德剛;高壓浮動(dòng)MOSFET柵極驅(qū)動(dòng)技術(shù)[J];通信電源技術(shù);2003年03期

8 ;安捷倫推出符合軍用標(biāo)準(zhǔn)的IGBT柵極光電耦合器[J];電子元器件應(yīng)用;2004年09期

9 ;MAX17075:高度集成升壓調(diào)節(jié)器[J];世界電子元器件;2009年06期

10 盛祖權(quán);張立;;IGBT模塊驅(qū)動(dòng)及保護(hù)技術(shù)[J];電力電子;2004年01期

相關(guān)重要報(bào)紙文章 前1條

1 記者 馬麗元 實(shí)習(xí)記者 唐燾逸;CISSOID與上海諾衛(wèi)卡簽訂經(jīng)銷協(xié)議 宣布正式進(jìn)軍中國(guó)市場(chǎng)[N];中國(guó)航空?qǐng)?bào);2014年

相關(guān)博士學(xué)位論文 前1條

1 祝靖;高壓柵極驅(qū)動(dòng)芯片可靠性研究[D];東南大學(xué);2015年

相關(guān)碩士學(xué)位論文 前7條

1 趙帥;一種雙通道柵極驅(qū)動(dòng)電路設(shè)計(jì)[D];電子科技大學(xué);2015年

2 席赫;MOSFET并聯(lián)驅(qū)動(dòng)技術(shù)的研究[D];吉林大學(xué);2016年

3 王發(fā)剛;智能功率驅(qū)動(dòng)芯片IGBT柵極控制方法研究與實(shí)現(xiàn)[D];東南大學(xué);2016年

4 李雪陽(yáng);P型柵極高電子遷移率晶體管可靠性研究[D];浙江大學(xué);2017年

5 王志軍;非晶硅集成柵極驅(qū)動(dòng)器在TFT-LCD中的應(yīng)用[D];上海交通大學(xué);2009年

6 陳永淑;IGBT的可靠性模型研究[D];重慶大學(xué);2010年

7 陳功;大功率IGBT串并聯(lián)技術(shù)研究[D];湖南大學(xué);2014年

，

本文編號(hào)：1365854