本文選題：二維原子晶體 + 銻烯��； 參考：《中國科學(xué)院大學(xué)(中國科學(xué)院物理研究所)》2017年博士論文

【摘要】：隨著電子工業(yè)的發(fā)展,集成度的提高,電子器件的尺寸需要進(jìn)一步縮小,因此人們?cè)谔綄ば虏牧系耐瑫r(shí),也在不斷降低電子材料的尺寸和維度。自從2004年,石墨烯被成功的剝離制備以來,二維材料受到了人們的廣泛關(guān)注。石墨烯優(yōu)異的性能,如高熱導(dǎo)率,超高載流子遷移率等,使得石墨烯在未來電子學(xué)領(lǐng)域具有廣泛的應(yīng)用潛力,同時(shí)也激勵(lì)著人們探索更多具有優(yōu)異性能的二維材料。近年來,單元素類石墨烯材料(如硅烯,鍺烯等)以及層狀過渡金屬二硫?qū)倩衔?TMDs,如二硫化鉬)等,以其自身優(yōu)異的物理化學(xué)性質(zhì),成為了材料科學(xué)界的研究熱點(diǎn),受到廣泛關(guān)注。本論文主要工作集中于銻烯,一種新型類石墨烯二維原子晶體,以及二硒化鉑,一種新型層狀過渡金屬二硫?qū)倩衔铩＠梅肿邮庋拥氖侄螌?duì)其進(jìn)行制備,通過低能電子衍射,掃描隧道顯微鏡,自旋極化掃描隧道顯微鏡,X射線光電子能譜等表征手段結(jié)合第一性原理計(jì)算,對(duì)其物理性質(zhì)及結(jié)構(gòu)特性進(jìn)行研究。(1)銻烯(Antimonene),一種新型二維原子晶體被預(yù)言具有優(yōu)良的光電子學(xué)和自旋電子學(xué)性質(zhì),而引起了人們的極大關(guān)注。本文的第一部分主要介紹了過渡金屬二硫?qū)倩衔锒诨Z表面制備和研究單層銻烯的工作。通過晶格匹配篩選,選擇了二碲化鈀作為襯底,來盡可能縮小襯底與銻烯的晶格失配程度。在生長過程中,在對(duì)襯底進(jìn)行加熱的同時(shí)沉積高純銻單質(zhì),從而得到二維有序的單層銻烯。利用原位掃描隧道顯微鏡及低能電子衍射,觀察到在二碲化鈀上,銻烯是(1×1)生長,可以得到清晰的蜂窩狀結(jié)構(gòu)原子分辨。同時(shí)利用X射線光電子能譜結(jié)合第一性原理計(jì)算,揭示了銻烯的二維原子結(jié)構(gòu)以及和襯底的弱相互作用。進(jìn)一步,將銻烯暴露空氣之后,再利用原位STM和XPS測量,探測了銻烯在空氣中的化學(xué)穩(wěn)定性,揭示了其在未來實(shí)際電子器件應(yīng)用中的巨大潛力。(2)二維材料中的一維結(jié)構(gòu),如邊界和納米帶等一直是人們研究的熱點(diǎn),關(guān)于二維材料邊界的磁學(xué)性質(zhì),相關(guān)的理論工作層出不窮,但實(shí)驗(yàn)上的工作卻很稀少,還有大量未解決的問題。本文的第二部分主要介紹了利用自旋極化掃描隧道顯微鏡對(duì)二硒化鉑(PtSe_2)納米帶邊界自旋進(jìn)行測量的工作。利用直接硒化的方法,在Pt(111)基底上生長了PtSe_2納米帶。利用掃描隧道顯微鏡結(jié)合第一性原理計(jì)算,能夠確定納米帶邊界的構(gòu)型。同時(shí),利用掃描隧道顯微譜在實(shí)空間的分布,研究了其邊界處的能帶彎曲,證明了納米帶邊界處未飽和的化學(xué)環(huán)境。進(jìn)一步,進(jìn)行了使用鎳針尖的自旋極化掃描隧道顯微鏡實(shí)驗(yàn),在實(shí)驗(yàn)上觀察到在相反的磁場下,同一邊界上掃描隧道顯微譜的信號(hào)不同,更深一步,從譜圖上也可清晰地得到在邊界處的信號(hào)對(duì)比。結(jié)合使用普通掃描隧道顯微鏡的對(duì)照試驗(yàn),在實(shí)驗(yàn)上首次直接觀測到了PtSe_2納米帶邊界上的自旋結(jié)構(gòu),即在同一邊界上自旋一致,同時(shí)由于其中心反演對(duì)稱性,觀測到納米帶的兩條對(duì)邊自旋相反。該實(shí)驗(yàn)結(jié)果對(duì)未來二維材料邊界及相關(guān)其在自旋電子學(xué)中的應(yīng)用及研究具有重要的意義。(3)PtSe_2作為一種新型過渡金屬二硫?qū)倩衔锊牧?其單層材料以高遷移率和寬帶隙成為了近年來新興的研究熱點(diǎn)。本文的第三部分主要集中在以為石墨為襯底生長單層及雙層PtSe_2,并對(duì)其體態(tài)及邊界處本征能隙進(jìn)行測量。利用分子束外延的方法,成功在石墨上制備了單層及雙層PtSe_2島。利用低溫掃描隧道譜,從實(shí)驗(yàn)上首次對(duì)單層和雙層二硒化鉑的本征能隙進(jìn)行了測量,精確地觀察到了單層和雙層PtSe_2的本征帶隙。同時(shí),實(shí)驗(yàn)中也測量了能隙在單層邊界處的分布,揭示了邊界處能帶彎曲的現(xiàn)象。更進(jìn)一步地,測量了單層和雙層界面處的能隙分布情況,發(fā)現(xiàn)了界面處某些能帶消失。結(jié)合第一性原理計(jì)算,成功揭示了PtSe_2層間軌道對(duì)能隙的影響,進(jìn)一步解釋了單雙層PtSe_2能隙差別的來源,揭示了其與二硒化鉬等傳統(tǒng)六重對(duì)稱過渡金屬二硫?qū)倩衔飳娱g作用的差別。對(duì)于二維材料層間作用的研究在二維半導(dǎo)體物性調(diào)控領(lǐng)域具有重要意義,是將來二維材料走向應(yīng)用過程中十分重要的一步。
[Abstract]:With the development of the electronics industry and the improvement of the degree of integration, the size of the electronic devices needs to be further reduced. As a result, the size and dimension of the electronic materials are constantly reduced while people are exploring new materials. Since the successful peeling of graphene in 2004, the two-dimensional material has attracted wide attention. Such as high thermal conductivity and ultra-high carrier mobility, graphene has a wide application potential in the field of electronics in the future, and it also encourages people to explore more excellent properties of two-dimensional materials. In recent years, single element graphene materials (such as Silene, germanium, etc.) and layered transition metal two sulfur compounds (TMDs, such as two) Molybdenum sulfide, and so on, has become a hot topic in the field of material science for its excellent physical and chemical properties. It has been focused on antimonene, a new type of graphene like two-dimensional atomic crystal, two selenide platinum, a new type of lamellar transition gold, two sulfur compounds. By means of low energy electron diffraction, scanning tunneling microscope, spin polarized scanning tunneling microscope, X ray photoelectron spectroscopy and other characterization methods, the physical properties and structural properties are studied. (1) antimonene (Antimonene), a new type of two-dimensional atomic crystal is predicted to have excellent optoelectronics and self. The first part of this paper mainly introduces the preparation and study of the monolayer antimonene on the surface of the transition metal two sulphur compound, two palladium telluride, and selected two palladium telluride as substrate by lattice matching, to reduce the lattice mismatch between the substrate and antimonene as much as possible. During the process, the high pure antimony monomer was deposited while the substrate was heated. The two-dimensional ordered monolayer antimonene was obtained. Using in situ scanning tunneling microscope and low energy electron diffraction, it was observed that on two palladium telluride, antimonene was (1 x 1) growth, and a clear honeycomb structure could be obtained by atomic resolution. At the same time, X ray photoelectron spectroscopy was used to combine. The first principle calculation reveals the two-dimensional atomic structure of antimonene and the weak interaction with the substrate. Further, after exposing the air to antimonene, the chemical stability of antimonene in the air is detected by the in-situ STM and XPS measurements, and the great potential in the future application of the actual electronic devices is revealed. (2) one dimension in the two-dimensional material. Structures, such as boundary and nanoscale, have always been a hot spot of research. The theoretical work on the magnetic properties of the two-dimensional material boundary is emerging, but the work in the experiment is very few, and there are still a lot of unsolved problems. The second part of this paper mainly introduces the use of spin polarized scanning tunneling microscopy (SPM) for the two selenide platinum (PtSe_2). PtSe_2 nanoribbons were grown on the Pt (111) substrate by direct selenide. Using the scanning tunneling microscope combined with the first principle, the configuration of the nanoscale boundary could be determined. At the same time, the band bending of the boundary was studied by the distribution of the scanning tunneling microscope in the real space. The unsaturated chemical environment at the boundary of the nanoscale is proved. Further, the spin polarization scanning tunneling microscope (SPM) experiment using the nickel tip is carried out. In the experiment, it is observed that the signal of scanning tunnel microspectrum on the same boundary is different under the opposite magnetic field, and the signal contrast at the boundary can be clearly obtained from the spectrogram. The spin structure on the PtSe_2 nanoscale boundary is directly observed in a controlled experiment using a common scanning tunneling microscope (SCM) for the first time. That is, the spin on the same boundary is consistent. At the same time, because of its central inversion symmetry, the two opposite spin of the nanobelts are observed. The experimental results are related to the boundary and correlation of the future two-dimensional material. Its application and research in spintronics are of great significance. (3) PtSe_2 as a new type of transition metal two sulfur compounds, its single layer material has become a new research hotspot in recent years with high mobility and wide band gap. The third parts of this paper mainly focus on the growth of monolayer and double layer PtSe_2 on graphite as the substrate, and The intrinsic energy gap at the body and the boundary is measured. By using the method of molecular beam epitaxy, the monolayer and double PtSe_2 islands are prepared successfully on the graphite. By using the low temperature scanning tunneling spectroscopy, the intrinsic gap of two selenide platinum in single layer and double layer is measured for the first time, and the intrinsic band gap of single layer and double layer of PtSe_2 is observed accurately. At the same time, the distribution of the energy gap at the single layer boundary is measured and the phenomenon of the band bending at the boundary is revealed. Further, the distribution of the energy gap at the single layer and the double layer interface is measured, and some energy bands at the interface are found to disappear. The effect of the PtSe_2 interlayer orbit on the energy gap is successfully revealed by the first principle. Further, the effect of the interlayer orbit on the gap is further revealed. The source of the gap difference between the single and double layers of PtSe_2 is explained, and the difference between the interlayer action of the traditional six heavy symmetric transition metal two sulfur compounds, such as molybdenum selenide, is revealed. The study on the interlayer action of two dimensional material is of great significance in the field of two-dimensional semiconductor property control, and is very important in the application of the two-dimensional material in the future. A step.

【學(xué)位授予單位】：中國科學(xué)院大學(xué)(中國科學(xué)院物理研究所)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2017
【分類號(hào)】：O48

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