本文選題：光伏效應(yīng) + 超導(dǎo)相關(guān)異質(zhì)結(jié)��； 參考：《中國(guó)科學(xué)技術(shù)大學(xué)》2017年博士論文

【摘要】：與傳統(tǒng)的半導(dǎo)體異質(zhì)結(jié)相比,過渡金屬氧化物異質(zhì)結(jié)有著非常豐富的物理性能,尤其在強(qiáng)關(guān)聯(lián)體系中,其特殊的物理性質(zhì),如:超導(dǎo)電性、鐵電性等,對(duì)異質(zhì)結(jié)的電輸運(yùn)性質(zhì)有著顯著地調(diào)控作用,并可以實(shí)現(xiàn)一些非常有應(yīng)用價(jià)值的功能。不僅如此,這些強(qiáng)關(guān)聯(lián)材料及其異質(zhì)結(jié)對(duì)光輻照也有著非常奇特的效應(yīng)。這些效應(yīng)對(duì)于研究光電薄膜器件有著拓展性的意義,尤其對(duì)于功能性的光電器件有著很多的應(yīng)用價(jià)值。在本論文中,我們對(duì)高溫超導(dǎo)材料及其異質(zhì)結(jié)、鐵電異質(zhì)結(jié)等光、電相關(guān)的效應(yīng)進(jìn)行了系統(tǒng)研究。整個(gè)論文包含六章,內(nèi)容概括如下:第一章從異質(zhì)結(jié)的基本性質(zhì)和光電相關(guān)的特性出發(fā),介紹了在半導(dǎo)體Nb-摻雜的SrTiO3上構(gòu)建的超導(dǎo)、鐵電以及金屬異質(zhì)結(jié)及其界面狀態(tài)、光電過程的原理與特征的物理現(xiàn)象,并探討了最新的研究相關(guān)研究進(jìn)展。第二章中設(shè)計(jì)了一種測(cè)量金屬或半導(dǎo)體等材料的電磁及光電性能的多功能樣品桿,尤其是使材料受電場(chǎng)、磁場(chǎng),特別是光場(chǎng)的同時(shí)作用,測(cè)量固體材料在外場(chǎng)作用下的介電、鐵電以及光電輸運(yùn)等物理性質(zhì)及其變化。第三章中,系統(tǒng)的研究了 YBa2Cu307-δ/Nb-dopedSrTi03異質(zhì)結(jié)在不同波長(zhǎng)下的光伏效應(yīng),當(dāng)光子能量為2.4eV時(shí)(遠(yuǎn)低于Nb-dopedSrTi03的能隙)也會(huì)有一定的光生電壓大小。并通過I-V特性隨溫度的變化,發(fā)現(xiàn)光生電壓和光生電流隨溫度的變化在120K附件有明顯跳變行為,這與SNTO單晶襯底在低溫下結(jié)構(gòu)相變有密切關(guān)系。第四章中,研究了 Pt/BiFe03(BFO)/SNTO異質(zhì)結(jié)(BFO厚度分別為60 nm和200 nm)在不同波長(zhǎng)激光照射下的光伏效應(yīng)和二極管整流行為。并且兩種波長(zhǎng)照射下的短路電流表現(xiàn)出了兩個(gè)量級(jí)大小的差別,表明其有著不同的光激發(fā)機(jī)制。隨著光強(qiáng)的增加,光輔助的二極管特性的整流比逐漸變大,但是開啟電壓保持不變。第五章中,Au(Pt)/SNTO肖特基結(jié)在不同波長(zhǎng)的激光輻照下,都觀察到了明顯的光伏響應(yīng),且光伏的結(jié)果與入射的光子能量存在著密切的關(guān)系。通過研究該類肖特基結(jié)的光生電壓與光生電流隨光子能量的變化,發(fā)現(xiàn)該異質(zhì)結(jié)表現(xiàn)出較好的符合肖特基結(jié)的特性,尤其對(duì)于Au/0.7wt%Nb-dopedSTO樣品,還通過I-V特性的肖特基擬合,以及室溫下的C-V特性,分別擬合得到了溫室下肖特基勢(shì)壘的大小并比較。此外變溫的光伏測(cè)試表明,其光生電壓的變化明顯的受到電子熱激發(fā)作用調(diào)制。第六章,研究了在不同溫度、不同磁場(chǎng)大小和角度下BaFe1.8Co0.2As2單晶的I-V特性,并根據(jù)渦旋玻璃理論進(jìn)行了標(biāo)度,其結(jié)果滿足3D渦旋玻璃轉(zhuǎn)變理論。并且角度依賴的渦旋玻璃轉(zhuǎn)變場(chǎng)Hg和臨界電流密度Jc可以較好地滿足各向異性的Ginzburg-Landau模型。我們還構(gòu)建了 BaFe1.8Co0.2As2單晶的三維磁通相圖,得到了磁通玻璃態(tài)、磁通液態(tài),以及正常態(tài)隨磁場(chǎng)角度的變化。
[Abstract]:Compared with the traditional semiconductor heterojunction, the transition metal oxide heterostructure has very rich physical properties, especially in the strongly correlated system, its special physical properties, such as superconductivity, ferroelectricity, etc.It can regulate the electrical transport properties of heterojunction and realize some very valuable functions.Not only that, these strongly related materials and their heterogeneity also have very peculiar effects on light irradiation.These effects are of great significance for the study of optoelectronic thin film devices, especially for functional optoelectronic devices.In this thesis, the optical and electrical effects of high temperature superconducting materials and their heterostructures, ferroelectric heterostructures are systematically studied.The whole thesis consists of six chapters, which are summarized as follows: in the first chapter, the superconducting, ferroelectric and metal heterojunctions and their interface states are introduced based on the basic properties of heterojunction and optoelectronic properties.The principle and characteristic physical phenomena of optoelectronic process are discussed.In the second chapter, a multifunctional sample rod is designed to measure the electromagnetic and optoelectronic properties of metals or semiconductors, especially to measure the dielectric properties of solid materials under the action of electric field, magnetic field, especially light field at the same time.Physical properties and changes of ferroelectricity and photoelectric transport.In chapter 3, the photovoltaic effect of YBA _ 2Cu _ 307- 未 / Nb-doped SrTi03 heterojunction at different wavelengths is systematically studied. When the photon energy is 2.4eV (far lower than the energy gap of Nb-dopedSrTi03), there is also a certain photogenerated voltage in YBA _ 2Cu _ 307- 未 / Nb-dopedSrTi03 heterojunction.Through the change of I-V characteristics with temperature, it is found that the variation of photovoltage and current with temperature has obvious jump behavior at 120K accessory, which is closely related to the structural phase transition of SNTO single crystal substrate at low temperature.In chapter 4, the photovoltaic effect and diode rectifying behavior of Pt/BiFe03(BFO)/SNTO heterojunction with thickness of 60 nm and 200 nm respectively under different wavelengths of laser irradiation are studied.The short circuit current of the two wavelengths is different in order of magnitude, which indicates that the short-circuit current has different photoexcitation mechanism.With the increase of light intensity, the rectifying ratio of photo-assisted diodes becomes larger, but the switching voltage remains the same.In chapter 5, the photovoltaic response of Au-PtN / SNTO Schottky junction is observed under different wavelengths of laser irradiation, and the photovoltaic results are closely related to the incident photon energy.By studying the variation of photogenerated voltage and photogenerated current with photon energy, it is found that the heterojunction exhibits good Schottky junction characteristics, especially for Au/0.7wt%Nb-dopedSTO samples, and is fitted by Schottky fitting of I-V characteristic.The size of Schottky barrier in greenhouse was fitted and compared with the C-V characteristic at room temperature.In addition, the photovoltaic measurements show that the change of photovoltage is obviously modulated by the electron-thermal excitation.In chapter 6, the I-V characteristics of BaFe1.8Co0.2As2 single crystals at different temperatures and different magnetic field sizes and angles are studied, and the results are calibrated according to the theory of vortex glass. The results satisfy the 3D vortex glass transition theory.The angle-dependent vortex glass transition field Hg and critical current density J _ c can well satisfy the anisotropic Ginzburg-Landau model.The three-dimensional flux phase diagram of BaFe1.8Co0.2As2 single crystal is also constructed. The flux glass state, flux liquid state and normal state vary with the angle of magnetic field.
【學(xué)位授予單位】：中國(guó)科學(xué)技術(shù)大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2017
【分類號(hào)】：O484.4;O611.62

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