本文關(guān)鍵詞：雙烯烴四甲基二硅氧烷環(huán)化聚合物結(jié)晶以及介電性能研究　出處：《中國科學(xué)技術(shù)大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 雙烯烴二硅氧烷 聚合物原子晶體 聚合物介電材料

【摘要】：現(xiàn)代電子器件正在不斷地向小型化、柔性化和低成本化發(fā)展。未來的電子器件很可能是柔性可穿戴的,這樣就要求其組成材料必須具有一定的柔韌性,并且要易于加工。而傳統(tǒng)的無機材料由于其相對的脆性以及相對苛刻的加工條件,逐漸不能滿足這些需求。聚合物雖然相對柔韌,具有良好的延展性,但是需要在其結(jié)構(gòu)上引入相應(yīng)的功能基團,或者進行摻雜,才能具備相應(yīng)的電學(xué)性能。由于熱力學(xué)熵增原理,聚合物鏈段自發(fā)蜷曲,會形成無定型區(qū)域,導(dǎo)致功能基團在空間中無序排布,嚴重影響聚合物材料的電學(xué)性能。所以控制聚合的有序度,使功能基團可以在空間有序排布,對研發(fā)和制備下一代聚合物電子材料至關(guān)重要。環(huán)化聚合具有提高聚合物熱穩(wěn)定性的優(yōu)點,熱穩(wěn)定性對電子材料非常重要。環(huán)化聚合物的特殊拓撲結(jié)構(gòu),往往有利于分子進行自組裝,有利于提高材料的有序度,并形成具有特殊理化性質(zhì)的結(jié)構(gòu)。這些對制備聚合物電子材料都是有幫助的。我們制備的雙烯烴四甲基二硅氧烷環(huán)化聚合物就可以在一些界面上自組裝形成原子晶體。在這篇工作中我們研究了雙烯烴四甲基二硅氧烷環(huán)化聚合物的結(jié)晶性能以及介電性能。論文分為聚合物的合成表征、結(jié)晶性能研究和介電性能研究三個部分。(1)在合成部分,我們通過RAFT自由基環(huán)化聚合手段聚合雙烯烴四甲基二硅氧烷單體(bMA與bSt),得到了雙烯烴四甲基二硅氧烷環(huán)化聚合物(PbMA)以及嵌段聚合物(PbMA-b-PbSt),通過核磁共振檢測證明了環(huán)化聚合的成功。(2)在結(jié)晶性能研究部分,我們摸索了 PbMA結(jié)晶薄膜的成膜條件,并通過偏光顯微鏡觀察,確定了最佳的結(jié)晶條件。之后我們通過多種成膜手段制備PbMA薄膜,并使用X射線衍射、廣角X射線散射、掠入射X射線衍射和高分辨透射電子顯微觀察和研究了 PbMA薄膜的結(jié)晶結(jié)構(gòu),發(fā)現(xiàn)其在水面自組裝形成薄膜具有埃米級有序的原子晶體結(jié)構(gòu)。(3)在介電性能研究部分,我們將PbMA溶液旋涂在高摻雜單晶硅片表面,再鍍上電極,制備了簡單的器件。通過器件測試了 PbMA薄膜的介電常數(shù)以及I-V曲線。發(fā)現(xiàn)PbMA有較低的介電常數(shù),表明其有作為高頻介電材料的潛力。通過I-V曲線,我們發(fā)現(xiàn)PbMA器件具有二極管的特性,并且其導(dǎo)通方向可以通過蒸鍍在薄膜表面的金屬電極種類(金和鋁)進行控制。
[Abstract]:Modern electronic devices have been miniaturized, flexible and low cost. The development of electronic devices in the future is likely to be flexible and wearable, this requires the material must have a certain degree of flexibility, and easy processing. But the traditional inorganic materials due to its relative brittleness and relatively harsh processing conditions gradually, do not meet these needs. Although a relatively flexible polymer, has good ductility, but need the corresponding introduction of functional groups in its structure, or by doping can have electrical properties accordingly. Due to the thermodynamic entropy principle, the polymer chain will form spontaneously curled, amorphous regions, leading to functional groups in space the disordered arrangement, seriously affect the electrical properties of polymer materials. So the control of polymerization degree of order of the functional groups in the space can be arranged in order, the research and preparation of A generation of electronic polymer material is essential. Ring polymerization has the advantages of increasing the polymer thermal stability, thermal stability is very important for electronic materials. The special topology cyclopolymer, often in favor of molecular self-assembly, is conducive to improve the order of the materials, and the formation of structure with special physical and chemical properties of these preparation. Polymer electronic materials are helpful. Double olefin four methyl siloxane we prepared two cyclopolymer can in some interface self-assembly to form atomic crystal. In this blog work we studied four methyl siloxane ring two double olefin polymer crystallization properties and dielectric properties. The thesis is divided into synthesis and characterization the three part of the polymer, crystallization properties and dielectric properties were studied. (1) in the synthesis part, we through the RAFT free radical cyclization polymerization polymerization of dienes four methyl two silicon Siloxane monomers (bMA and bSt), the double four methyl siloxane ring two olefin polymer (PbMA) and block copolymer (PbMA-b-PbSt), detected by nuclear magnetic resonance proved cyclopolymerization success. (2) in the part of research of crystallization, we explored the film-forming conditions of crystallization of PbMA thin film and, through the microscope, the optimum conditions for crystallization. After we have adopted a variety of PbMA thin film coating method, and using X ray diffraction, wide angle X ray scattering, the crystal structure of grazing incidence X - ray diffraction and high resolution transmission electron microscopic observation and study of the PbMA film on the surface of the water, found its self assembly to form a film with a crystal structure. Amy order (3) on the dielectric properties of the part, we will PbMA solution spin coating on high doped silicon wafer surface, and then plated on the electrode, a simple device was fabricated. The test device through the thin PbMA Film dielectric constant and I-V curve. It is found that PbMA has a low dielectric constant, indicating that it has as high frequency dielectric material potential. Through the I-V curve, we found that the characteristics of PbMA devices with a diode, and the conduction direction can be plated on the metal electrode type film surface by evaporation (gold and aluminum) control.

【學(xué)位授予單位】：中國科學(xué)技術(shù)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：O634.41

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