ZnO基稀磁半導體電磁特性的研究
本文關鍵詞: ZnO Co摻雜 Mn摻雜 電輸運性質 磁性 出處:《渤海大學》2017年碩士論文 論文類型:學位論文
【摘要】:本文采用水熱合成法分別制備了Co摻雜和Mn摻雜氧化鋅納米材料,對初始材料以及在空氣中退火材料的電學和磁學性質進行了研究。通過X射線衍射(XRD)、掃描電鏡(SEM)等儀器對制得樣品的結構、形貌進行了表征,通過霍爾效應測試系統(tǒng)對樣品的電輸運性質和磁阻效應進行了分析,研究結果表明:(1)XRD結果顯示Zn_(1-x)Co_xO樣品為六方纖鋅礦結構,鈷元素以Co2+摻入氧化鋅的晶格當中且不改變氧化鋅的物相結構,但是XRD峰位均有不同程度的向右偏移(與摻雜濃度有關);SEM顯示樣品展現(xiàn)了不同形貌。通過XPS、Raman和FTIR分析表明Zn0.9Co0.1O合成材料為純相結構,且沒有其他物相存在;所有樣品均表現(xiàn)為正磁阻效應。(2)Zn_(1-x)Mn_xO為六方纖鋅礦結構,隨著摻雜濃度的改變,XRD峰位有不同程度的向左偏移,晶格常數(shù)變大,退火后樣品的晶粒尺寸變大;SEM測試顯示材料合成形貌均為六棱柱,大小均勻。通過XPS、Raman和FTIR分析表明Zn_(1-x)Mn_xO合成材料有Mn的氧化物形成。未經(jīng)熱處理的樣品均表現(xiàn)為負磁阻效應,這主要是由于電子局域化作用和能帶劈裂效應共同作用的結果,退火后的樣品內(nèi)部晶格缺陷減少,水分子導電作用減弱,致使樣品由負磁阻效應轉變?yōu)檎抛栊;魻栃痛抛栊Y果反應一致。
[Abstract]:In this paper, Co doped and mn doped ZnO nanomaterials were prepared by hydrothermal synthesis. The electrical and magnetic properties of the initial materials and the annealed materials in air were studied. The structure and morphology of the samples were characterized by means of X-ray diffraction (XRD), X-ray diffraction (XRD), scanning electron microscopy (SEM) and so on. The electrical transport properties and magnetoresistive effect of the samples were analyzed by Hall effect test system. The results show that the Zn_(1-x)Co_xO samples are hexagonal wurtzite structure. Cobalt is doped into the lattice of zinc oxide with Co2 and does not change the phase structure of zinc oxide. However, the peak positions of XRD were shifted to the right to different extent. The samples showed different morphologies. The results of FTIR and FTIR analysis showed that the Zn0.9Co0.1O synthesized materials were pure phase structure and no other phase existed. All the samples show positive magnetoresistive effect. The structure of the structure is hexagonal wurtzite. With the change of doping concentration, the peak position of X ray diffraction shifts to the left, and the lattice constant increases. After annealing, the grain size of the samples increased and SEM showed that the synthesized materials were all hexagonal and uniform in size. The results of Zn_(1-x)Mn_xO Raman and FTIR analysis showed that mn oxides were formed in the synthesized materials, and the samples without heat treatment showed negative magnetoresistive effect. This is mainly due to the interaction of electron localization and band splitting effect. The lattice defects in the annealed samples are reduced and the conductivity of water molecules is weakened. The results of Hall effect and magnetoresistive effect are consistent.
【學位授予單位】:渤海大學
【學位級別】:碩士
【學位授予年份】:2017
【分類號】:O472
【參考文獻】
相關期刊論文 前10條
1 孫志剛;龐雨雨;胡靖華;何雄;李月仇;;紫外光輻照對TiO_2納米線電輸運性能的影響及磁阻效應研究[J];物理學報;2016年09期
2 程巖;李文獻;郝維昌;許懷哲;徐忠菲;鄭離榮;張靜;竇士學;王天民;;Manipulating coupling state and magnetism of Mn-doped ZnO nanocrystals by changing the coordination environment of Mn via hydrogen annealing[J];Chinese Physics B;2016年01期
3 吳兆豐;郭磊;程鯤;張峰;關榮鋒;;Influence of Mn-doping concentration on the microstructure and magnetic properties of ZnO thin films[J];Optoelectronics Letters;2016年01期
4 俱海浪;李寶河;陳曉白;劉帥;于廣華;;不同底層對Co/Pt多層膜反;魻栃绊懙难芯縖J];稀有金屬;2016年01期
5 王浩;詹華瀚;陳曉航;周穎慧;王惠瓊;康俊勇;;Ⅱ-Ⅵ比對分子束外延生長的ZnO/ZnMgO超晶格的相結構調控[J];發(fā)光學報;2014年05期
6 許小紅;李小麗;齊世飛;江鳳仙;全志勇;范九萍;馬榮榮;;氧化物稀磁半導體的研究進展[J];物理學進展;2012年04期
7 江銘波;閻旭東;徐國旺;;霍爾效應及霍爾元件在物理量測量中的應用[J];湖北工業(yè)大學學報;2011年02期
8 高家誠;陳飛宏;張敏;;pH值對水熱合成HA晶須形貌的影響[J];功能材料;2010年08期
9 徐慢;夏冬林;趙修建;;透明導電氧化物薄膜材料及其制備技術研究進展[J];材料導報;2006年S2期
10 付三玲;蔡淑珍;張曉軍;王偉偉;韋志仁;;水熱法制備ZnO晶體及納米材料研究進展[J];人工晶體學報;2006年05期
,本文編號:1528928
本文鏈接:http://sikaile.net/shoufeilunwen/benkebiyelunwen/1528928.html