【摘要】： 硫錫化合物SnS、SnS2和Sn2S3作為半導體材料,具有直接光學帶隙窄的特點,這使得它們在光伏發(fā)生器件,近紅外探測器和光學記錄介質(zhì)等應用方面具有很大的研究價值。 本實驗在前人研究的基礎上,使用了一種新的電沉積液,采用恒電位電沉積法,成功制備了Sn2S3和SnS兩種半導體薄膜材料。通過XRD、SEM、EDS、Mapping、XPS等表征手段,對沉積電位、退火溫度、電沉積基底等工藝條件對薄膜結(jié)構(gòu)、形貌及成分的影響進行了研究。最后通過UV-VIS-NIR, Hall test對制備的薄膜進行了光電性能的表征。 采用恒電位電沉積法,在Ni箔基底上研究了沉積電位、退火溫度對薄膜結(jié)構(gòu)、形貌及成分的影響。發(fā)現(xiàn)當沉積電位為-0.80 V時,制備出的薄膜為Sn2S3,而當沉積電位為-0.90V時,制備得到了SnS薄膜。經(jīng)過不同溫度的熱處理,得出兩種薄膜的最佳熱處理溫度為250℃。在同樣條件下,于ITO基底上制備得到了Sn2S3和SnS薄膜,比較兩種基底上制備得到的薄膜的形貌和成分,發(fā)現(xiàn)在ITO基底上得到的薄膜顆粒形貌更規(guī)整,尺寸更小,且Sn／S更加接近化學計量比。 對ITO基底上制備得到的Sn2S3薄膜和SnS薄膜,在氬氣氣氛下,于250℃進行了退火處理,得到了Sn2S3和SnS薄膜。發(fā)現(xiàn)經(jīng)過退火處理后,Sn2S3薄膜的擇優(yōu)取向發(fā)生了改變,形成了由一維納米棒組成的3D網(wǎng)絡結(jié)構(gòu),薄膜的Sn/S由1／1.2變?yōu)?／1.23；SnS薄膜的擇優(yōu)取向同樣發(fā)生了改變,顆粒形狀由納米顆粒變?yōu)榧{米棒,薄膜的Sn/S由1.02／1變?yōu)?.49／1。 對退火前后的薄膜進行的光電性能表征表明,Sn2S3半導體薄膜退火前的光學帶隙為1.87 eV,半導體類型為p型,而退火后薄膜的光學帶隙變?yōu)?.65 eV,半導體類型變?yōu)閚型；SnS半導體薄膜退火前的光學帶隙為1.75 eV,半導體類型為n型,退火后薄膜的光學帶隙變?yōu)?.54 eV,半導體類型變?yōu)閜型。
[Abstract]:As semiconductor materials, thiotin compounds SnS,SnS2 and Sn2S3 have the characteristics of narrow direct optical band gap, which makes them have great research value in photovoltaic devices, near infrared detector and optical recording medium. On the basis of previous studies, two kinds of semiconductor thin films, Sn2S3 and SnS, were successfully prepared by potentiostatic electrodeposition. The effects of deposition potential, annealing temperature and electrodeposition substrate on the structure, morphology and composition of the films were studied by XRD,SEM,EDS,Mapping,XPS. Finally, the photoelectric properties of the films were characterized by UV-VIS-NIR, Hall test. The effects of deposition potential and annealing temperature on the structure, morphology and composition of Ni foil were studied by potentiostatic electrodeposition. It is found that when the deposition potential is-0.80V, the prepared thin films are Sn2S3, and when the deposition potential is-0.90V, SnS thin films are prepared. After heat treatment at different temperatures, the optimum heat treatment temperature of the two films is 250 鈩，

本文編號：2483424