【摘要】： 硫錫化合物SnS、SnS2和Sn2S3作為半導(dǎo)體材料,具有直接光學(xué)帶隙窄的特點(diǎn),這使得它們?cè)诠夥l(fā)生器件,近紅外探測(cè)器和光學(xué)記錄介質(zhì)等應(yīng)用方面具有很大的研究?jī)r(jià)值。 本實(shí)驗(yàn)在前人研究的基礎(chǔ)上,使用了一種新的電沉積液,采用恒電位電沉積法,成功制備了Sn2S3和SnS兩種半導(dǎo)體薄膜材料。通過(guò)XRD、SEM、EDS、Mapping、XPS等表征手段,對(duì)沉積電位、退火溫度、電沉積基底等工藝條件對(duì)薄膜結(jié)構(gòu)、形貌及成分的影響進(jìn)行了研究。最后通過(guò)UV-VIS-NIR, Hall test對(duì)制備的薄膜進(jìn)行了光電性能的表征。 采用恒電位電沉積法,在Ni箔基底上研究了沉積電位、退火溫度對(duì)薄膜結(jié)構(gòu)、形貌及成分的影響。發(fā)現(xiàn)當(dāng)沉積電位為-0.80 V時(shí),制備出的薄膜為Sn2S3,而當(dāng)沉積電位為-0.90V時(shí),制備得到了SnS薄膜。經(jīng)過(guò)不同溫度的熱處理,得出兩種薄膜的最佳熱處理溫度為250℃。在同樣條件下,于ITO基底上制備得到了Sn2S3和SnS薄膜,比較兩種基底上制備得到的薄膜的形貌和成分,發(fā)現(xiàn)在ITO基底上得到的薄膜顆粒形貌更規(guī)整,尺寸更小,且Sn／S更加接近化學(xué)計(jì)量比。 對(duì)ITO基底上制備得到的Sn2S3薄膜和SnS薄膜,在氬氣氣氛下,于250℃進(jìn)行了退火處理,得到了Sn2S3和SnS薄膜。發(fā)現(xiàn)經(jīng)過(guò)退火處理后,Sn2S3薄膜的擇優(yōu)取向發(fā)生了改變,形成了由一維納米棒組成的3D網(wǎng)絡(luò)結(jié)構(gòu),薄膜的Sn/S由1／1.2變?yōu)?／1.23；SnS薄膜的擇優(yōu)取向同樣發(fā)生了改變,顆粒形狀由納米顆粒變?yōu)榧{米棒,薄膜的Sn/S由1.02／1變?yōu)?.49／1。 對(duì)退火前后的薄膜進(jìn)行的光電性能表征表明,Sn2S3半導(dǎo)體薄膜退火前的光學(xué)帶隙為1.87 eV,半導(dǎo)體類型為p型,而退火后薄膜的光學(xué)帶隙變?yōu)?.65 eV,半導(dǎo)體類型變?yōu)閚型；SnS半導(dǎo)體薄膜退火前的光學(xué)帶隙為1.75 eV,半導(dǎo)體類型為n型,退火后薄膜的光學(xué)帶隙變?yōu)?.54 eV,半導(dǎo)體類型變?yōu)閜型。
[Abstract]:As semiconductor materials, thiotin compounds SnS,SnS2 and Sn2S3 have the characteristics of narrow direct optical band gap, which makes them have great research value in photovoltaic devices, near infrared detector and optical recording medium. On the basis of previous studies, two kinds of semiconductor thin films, Sn2S3 and SnS, were successfully prepared by potentiostatic electrodeposition. The effects of deposition potential, annealing temperature and electrodeposition substrate on the structure, morphology and composition of the films were studied by XRD,SEM,EDS,Mapping,XPS. Finally, the photoelectric properties of the films were characterized by UV-VIS-NIR, Hall test. The effects of deposition potential and annealing temperature on the structure, morphology and composition of Ni foil were studied by potentiostatic electrodeposition. It is found that when the deposition potential is-0.80V, the prepared thin films are Sn2S3, and when the deposition potential is-0.90V, SnS thin films are prepared. After heat treatment at different temperatures, the optimum heat treatment temperature of the two films is 250 鈩，

本文編號(hào)：2483424