【摘要】： 在薄膜太陽電池研究中,位于N層和P層之間的Ⅰ層的研究顯得格外重要。因?yàn)樵搶邮钦麄�(gè)薄膜電池的核心,是光生載流子的產(chǎn)生區(qū),與薄膜電池的光電轉(zhuǎn)換效率息息相關(guān)。所以為了提高薄膜電池在長波區(qū)域的吸收,拓展對(duì)太陽能光譜的響應(yīng),進(jìn)一步提高薄膜電池的效率,我們對(duì)Ⅰ層薄膜進(jìn)行了深入研究,為疊層太陽電池的研究奠定基礎(chǔ)。 本文采用純度為20%的SiH4和純度為99.999%的GeH4做反應(yīng)氣體,用純度99.99%的H2作為稀釋氣體,采用射頻等離子體增強(qiáng)化學(xué)沉積法(RF-PECVD)制備了四個(gè)工藝條件系列的非晶硅鍺薄膜,包括反應(yīng)氣體濃度、襯底溫度、輝光功率、反應(yīng)氣體壓強(qiáng)。然后對(duì)其結(jié)構(gòu)特性、沉積速率、光學(xué)帶隙和光敏性進(jìn)行了深入的研究和探討。結(jié)果表明：在我們的實(shí)驗(yàn)條件下,沉積速率將隨著輝光功率的減小和反應(yīng)氣體壓強(qiáng)的降低而增大,但隨著溫度的升高和反應(yīng)氣體濃度的增大的變化趨勢并不明顯；光學(xué)帶隙將隨著反應(yīng)氣體濃度的增大和溫度的升高而變窄,但是其受輝光功率和反應(yīng)氣體壓強(qiáng)的影響幾乎可以忽略的；光敏性幾乎不受襯底溫度、輝光功率、反應(yīng)氣體壓強(qiáng)的影響,但與反應(yīng)氣體濃度的聯(lián)系則較為緊密,其先隨著反應(yīng)氣體濃度的增大而增大然后則減小。
[Abstract]:In the study of thin film solar cells, the study of layer I between N layer and P layer is particularly important. Because this layer is the core of the whole thin film battery and the generation region of photogenerated carriers, it is closely related to the photoelectric conversion efficiency of the thin film battery. Therefore, in order to improve the absorption of thin film cells in the long wave region, expand the response to the solar spectrum, and further improve the efficiency of thin film cells, we have carried out a deep study of layer I thin films to lay a foundation for the study of stacked solar cells. In this paper, SiH4 with purity of 20% and GeH4 with purity of 99.999% were used as reaction gas and H2 with purity of 99.99% as dilution gas. Four series of amorphous silicon and germanium films were prepared by radio frequency plasma enhanced chemical deposition (RF-PECVD), including reaction gas concentration, substrate temperature, glow power and reaction gas pressure. Then, the structure, deposition rate, optical band gap and Guang Min property are studied. The results show that the deposition rate increases with the decrease of the glow power and the pressure of the reaction gas under our experimental conditions, but the trend is not obvious with the increase of the temperature and the concentration of the reaction gas. The optical band gap will narrow with the increase of reaction gas concentration and temperature, but the influence of glow power and reaction gas pressure can be neglected. Guang Min is almost independent of substrate temperature, glow power and reaction gas pressure, but is closely related to the concentration of the reaction gas, which increases at first and then decreases with the increase of the concentration of the reaction gas.
【學(xué)位授予單位】：暨南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2010
【分類號(hào)】：O484.1

【參考文獻(xiàn)】

相關(guān)期刊論文 前6條

1 孟強(qiáng);;太陽能光伏發(fā)電技術(shù)現(xiàn)狀及產(chǎn)業(yè)發(fā)展[J];安徽科技;2010年01期

2 吳貴斌;葉志鎮(zhèn);趙星;劉國軍;趙炳輝;;金屬誘導(dǎo)生長法在Ni硅化物上異質(zhì)生長多晶GeSi薄膜[J];半導(dǎo)體學(xué)報(bào);2006年04期

3 谷士斌;胡增鑫;張建軍;孫建;楊瑞霞;;VHF—PECVD法制備微晶SiGe薄膜及太陽電池[J];光電子.激光;2007年05期

4 王光偉;;太陽能電池產(chǎn)業(yè)與半導(dǎo)體鍺硅薄膜的應(yīng)用綜述[J];天津工程師范學(xué)院學(xué)報(bào);2006年01期

5 張鳳鳴;多晶硅薄膜太陽電池[J];太陽能學(xué)報(bào);2003年04期

6 羅靖,姚宏林;鍺硅薄膜的光學(xué)特性研究[J];指揮技術(shù)學(xué)院學(xué)報(bào);2001年05期

相關(guān)博士學(xué)位論文 前1條

1 張宇翔;太陽能電池用多晶硅薄膜的制備研究[D];鄭州大學(xué);2005年

相關(guān)碩士學(xué)位論文 前2條

1 劉國軍;UHVCVD生長鍺硅薄膜及其電學(xué)性能研究[D];浙江大學(xué);2006年

2 谷士斌;反應(yīng)熱CVD法制備微晶硅鍺薄膜及其太陽電池應(yīng)用研究[D];河北工業(yè)大學(xué);2007年

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本文編號(hào)：2330358