【摘要】：本文以SiC為高輻射填料,分別以硅溶膠和正硅酸乙酯(TEOS)為溶劑采用粉漿法在GH4099薄板表面制備了紅外高輻射涂層,研究了涂層的制備工藝,并對涂層的性能進(jìn)行了表征。 首先采用等離子噴涂法在GH4099上制備ZrO_2過渡層,之后采用粉漿法在ZrO_2過渡層上制備高輻射層,優(yōu)化設(shè)計(jì)后得出了高輻射涂層的最佳制備工藝:硅溶膠為溶劑的涂層按配比100:8:2:0.25、100:4:2:0.25、100:0:2:0.25:0.8逐層涂刷;干燥制度是先室溫干燥,再300℃燒結(jié)脫水;燒結(jié)工藝是首先用硅溶膠浸漬2 min后燒結(jié)1h,燒結(jié)之后再用硅溶膠浸漬,之后再300℃燒結(jié)0.5h,升溫速率均為1℃/min。 TEOS為溶劑的涂層按配比16:3:1:0.2、16:1.5:1:0.2、16:0:1:0.2:0.4逐層涂刷;采取干燥制度是先40℃水蒸氣干燥,再室溫干燥;燒結(jié)工藝為涂層首先300℃預(yù)燒結(jié),保溫30min。自然冷卻后利用硅溶膠浸漬2 min后燒結(jié)1h,升溫速率均是1℃/min。 研究表明:硅溶膠為溶劑的涂層干燥過程中出現(xiàn)微裂紋,燒結(jié)溫度對涂層的表面與截面形貌并無明顯影響,而TEOS為溶劑的涂層干燥過程涂層基本不產(chǎn)生裂紋,燒結(jié)溫度提高后涂層的致密性提高,900℃燒結(jié)后的涂層表層中出現(xiàn)了玻璃相;在涂層界面處存在成分突變,高輻射層內(nèi)ZrO_2存在成分梯度,并且表層的XRD只有YSZ、m-ZrO_2和?-SiC的衍射峰;高輻射層的硬度與彈性模量的值均隨著燒結(jié)溫度的升高而增加,不同溫度燒結(jié)的涂層在900℃ 室溫進(jìn)行100次抗熱震性試驗(yàn)后均沒有產(chǎn)生宏觀裂紋;隨著燒結(jié)溫度與測量溫度的升高,涂層的發(fā)射率增大,可達(dá)0.92,降低涂層厚度發(fā)射率降低,TEOS為溶劑的涂層發(fā)射率整體上高于硅溶膠為溶劑的涂層發(fā)射率;1050℃保溫2h后,TEOS為溶劑的涂層表面出現(xiàn)了玻璃相,封填了涂層表面的微裂紋。
[Abstract]:In this paper, infrared high radiation coating was prepared on the surface of GH4099 sheet by slurry method using silica sol and ethyl orthosilicate (TEOS) as solvent, using SiC as high radiation filler. The preparation process of the coating was studied and the properties of the coating were characterized. First, plasma spraying method was used to prepare ZrO_2 transition layer on GH4099, and then high radiation layer was prepared on ZrO_2 transition layer by slurry method. After optimized design, the optimum preparation technology of high radiation coating was obtained: the coating with silica sol as solvent was brushed layer by layer according to the ratio of 100: 8: 2: 2: 0.25: 100: 4: 2: 0.25: 100: 0: 0: 0: 0: 0.25: 0.8; the drying system was first dry at room temperature and then dewatered at 300 鈩，

本文編號：2285517