鋁離子摻雜氧化鋅薄膜的溶膠—凝膠法制備及性能
發(fā)布時間:2018-10-09 12:09
【摘要】:目前,薄膜材料已成為微電子學、光電子學、材料表面改性、傳感器和太陽能利用等許多新型交叉學科的重要的材料基礎。其中,透明導電氧化物薄膜材料因其大的載流子濃度和光學禁帶寬度而具有優(yōu)良的光學性能和導電性能,應用領域非常廣泛,比如應用于太陽能電池、平板顯示器的透明電極、電磁防護屏等方面。 ZnO薄膜由于具有優(yōu)異的壓電、光電、壓敏等特性,原材料在自然界中的儲量豐富、易于制造、成本低廉、無毒和化學穩(wěn)定性好,近年來受到廣泛的關注,特別是Al3+摻雜的ZnO薄膜(簡稱ZAO或AZO)。 常用的制備氧化物透明導電薄膜的工藝有磁控濺射、化學氣相沉積、真空蒸發(fā)和溶膠-凝膠法。比較這些方法,溶膠-凝膠法具有工藝簡單,成分易于控制,成本低廉和工藝參數(shù)易控等優(yōu)點。 因此,本論文運用室溫溶膠-凝膠技術和熱處理工藝,在載玻片上制備出Al離子摻雜的ZnO薄膜。采用X射線衍射(XRD)和掃描電子顯微鏡(SEM)對薄膜的成分、結構和形貌進行了表征;通過紫外-可見光分光光度計對薄膜的透光性能進行了研究。 結果表明,所制備的氧化鋅薄膜為六方纖鋅礦結構,沿C軸方向擇優(yōu)生長;沒有發(fā)現(xiàn)鋁離子的摻雜對氧化鋅的基本結構的改變;所摻雜的Al離子為取代鋅離子的替位摻雜;熱處理后,氧化鋅顆粒為六角形針(柱)狀形貌;隨著熱處理溫度的升高,薄膜的透光率增加;經(jīng)600℃熱處理后的氧化鋅薄膜,隨著鋁離子摻雜濃度的增加,透光率先增加后變小,并在鋁離子摻雜濃度為2%時,透光率達到最大值;鋁離子摻雜濃度較大時,晶格畸變的影響使薄膜的透光率降低。溶膠濃度為0.6mol/L、鋁與鋅的摩爾比為2%和熱處理溫度為600℃時,所制備的薄膜的質量和性能最好。
[Abstract]:At present, thin film materials have become the important material foundation of many new interdisciplinary disciplines, such as microelectronics, optoelectronics, material surface modification, sensor and solar energy utilization. Among them, transparent conductive oxide thin films have excellent optical properties and conductive properties due to their large carrier concentration and optical band gap. They are widely used in many fields, such as solar cells and transparent electrodes for flat panel displays. Electromagnetic protection screen and other aspects. Due to its excellent piezoelectric, optoelectronic and pressure-sensitive properties, ZnO thin films are widely concerned in recent years because of their abundant reserves in nature, easy to manufacture, low cost, non-toxic and good chemical stability. Especially ZnO films doped with Al3 (ZAO or AZO). For short) The common processes of preparing oxide transparent conductive thin films include magnetron sputtering, chemical vapor deposition, vacuum evaporation and sol-gel method. Compared with these methods, sol-gel method has the advantages of simple process, easy control of composition, low cost and easy control of process parameters. Therefore, in this thesis, Al ion doped ZnO thin films were prepared on glass substrates by using room temperature sol-gel technique and heat treatment. The composition, structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), and the transmittance of the films was studied by UV-Vis spectrophotometer. The results showed that the ZnO thin films were hexagonal wurtzite structure and preferred growth along the C axis, no changes of the basic structure of zinc oxide were found due to the doping of aluminum ions, and the doped Al ions were substituted for zinc ions. After heat treatment, the zinc oxide particles are hexagonal needle (column) shape, the transmittance of the film increases with the increase of heat treatment temperature, and the zinc oxide film after heat treatment at 600 鈩,
本文編號:2259286
[Abstract]:At present, thin film materials have become the important material foundation of many new interdisciplinary disciplines, such as microelectronics, optoelectronics, material surface modification, sensor and solar energy utilization. Among them, transparent conductive oxide thin films have excellent optical properties and conductive properties due to their large carrier concentration and optical band gap. They are widely used in many fields, such as solar cells and transparent electrodes for flat panel displays. Electromagnetic protection screen and other aspects. Due to its excellent piezoelectric, optoelectronic and pressure-sensitive properties, ZnO thin films are widely concerned in recent years because of their abundant reserves in nature, easy to manufacture, low cost, non-toxic and good chemical stability. Especially ZnO films doped with Al3 (ZAO or AZO). For short) The common processes of preparing oxide transparent conductive thin films include magnetron sputtering, chemical vapor deposition, vacuum evaporation and sol-gel method. Compared with these methods, sol-gel method has the advantages of simple process, easy control of composition, low cost and easy control of process parameters. Therefore, in this thesis, Al ion doped ZnO thin films were prepared on glass substrates by using room temperature sol-gel technique and heat treatment. The composition, structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), and the transmittance of the films was studied by UV-Vis spectrophotometer. The results showed that the ZnO thin films were hexagonal wurtzite structure and preferred growth along the C axis, no changes of the basic structure of zinc oxide were found due to the doping of aluminum ions, and the doped Al ions were substituted for zinc ions. After heat treatment, the zinc oxide particles are hexagonal needle (column) shape, the transmittance of the film increases with the increase of heat treatment temperature, and the zinc oxide film after heat treatment at 600 鈩,
本文編號:2259286
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