【摘要】：氧化鋅鋁(ZAO)薄膜是六角纖鋅礦結(jié)構(gòu)(Wurzite hexagonal structure)的多晶體,為N型半導(dǎo)體薄膜材料。ZAO薄膜導(dǎo)電主要是靠摻雜的鋁和氧空位作用提供電子。ZAO薄膜具有光學(xué)帶隙寬(3.34eV),可見(jiàn)光透過(guò)率高,電阻率低的特點(diǎn),是薄膜太陽(yáng)電池透明電極的理想材料。 制備具有類金字塔絨面結(jié)構(gòu)鋁摻雜氧化鋅(ZAO)薄膜,目前流行的做法是用MOCVD法和磁控濺射結(jié)合濕法刻蝕方法,前者設(shè)備昂貴成本高,而后者在刻蝕過(guò)程中不易控制。本論文采用二步法首先以石英為襯底,用溶膠-凝膠方法制備一層鋁摻雜氧化鋅(ZAO)薄膜,再用磁控濺射方法,在ZAO薄膜上低溫濺射制備得到了絨面結(jié)構(gòu)鋁摻雜氧化鋅(ZAO)薄膜,實(shí)現(xiàn)了絨面結(jié)構(gòu)ZAO薄膜的廉價(jià)制備。 本文首先探索了溶膠-凝膠法在石英玻璃襯底上制備ZAO薄膜工藝條件對(duì)薄膜結(jié)晶性能的影響,獲得制備自支撐ZAO薄膜的最佳工藝條件:溶液濃度為0.80mol/L;鋁摻雜濃度為4at%;陳化時(shí)間為5天(120h);干燥溫度為150℃,干燥時(shí)間為10min;預(yù)處理溫度為300℃;退火溫度為800℃;鍍膜層數(shù)為8層;然后探索了用磁控濺射法在石英襯底上濺射沉積ZAO薄膜,通過(guò)對(duì)薄膜微結(jié)構(gòu)、電阻率、表面形貌以及紫外可見(jiàn)光的透過(guò)率進(jìn)行了分析,沒(méi)有得到具有優(yōu)良絨面結(jié)構(gòu)的ZAO薄膜。結(jié)合以上兩種方法我們?cè)O(shè)計(jì)了實(shí)驗(yàn)方案,利用二步法制備絨面結(jié)構(gòu)的ZAO薄膜,以溶膠-凝膠法制備的薄膜作為誘導(dǎo)自支撐襯底,利用磁控濺射沉積一層薄膜,通過(guò)實(shí)驗(yàn)分析,得到了性能優(yōu)良的絨面ZAO薄膜,四探針和紫外透射譜測(cè)試,絨面結(jié)構(gòu)的ZAO薄膜電阻率為10-3?·cm量級(jí)、可見(jiàn)光透過(guò)率大于85%,表面形貌顯示絨面結(jié)構(gòu)均勻排布。 將具有絨面結(jié)構(gòu)的ZAO薄膜應(yīng)用于非晶硅薄膜太陽(yáng)電池的前電極,發(fā)現(xiàn)電池性能與用FTO導(dǎo)電膜做前電極的電池有基本相近的效果,是一種具有陷光性能、能用于非晶硅太陽(yáng)能薄膜電池透明導(dǎo)電膜的理想材料。有望替代FTO廣泛運(yùn)用于非晶硅太陽(yáng)電池。
[Abstract]:Zinc oxide aluminum (ZAO) thin film is a polycrystal of hexagonal wurtzite structure (Wurzite hexagonal structure). The conduction of N-type semiconductor thin film. ZAO thin film mainly depends on the interaction of doped aluminum and oxygen vacancy. ZAO thin film has optical band gap width (3.34eV) and high visible light transmittance. The characteristic of low resistivity is the ideal material for transparent electrode of thin film solar cell. Aluminum-doped zinc oxide (ZAO) thin films with pyramidal suede structure have been prepared. At present, MOCVD method and magnetron sputtering combined with wet etching method are widely used. The former is expensive and the latter is difficult to control in the etching process. In this paper, a layer of Al-doped zinc oxide (ZAO) thin films was prepared by sol-gel method on quartz substrate, and then deposited on ZAO thin films by magnetron sputtering at low temperature. Aluminum-doped ZnO (ZAO) thin films with suede structure were prepared by magnetron sputtering. The cheap preparation of suede structure ZAO films was realized. In this paper, the effect of process conditions on the crystalline properties of ZAO thin films prepared on quartz glass substrates by sol-gel method was investigated. The optimum technological conditions for the preparation of self-supporting ZAO thin films were obtained as follows: solution concentration 0.80 mol / L; aluminum doping concentration 4 attic; aging time 5 days (120h); drying temperature 150 鈩，

本文編號(hào)：2225410