【摘要】：當前,非晶硅薄膜太陽能電池以其成本低,工藝簡單,能量回收時間短等優(yōu)點得到了廣泛關注。根據(jù)襯底狀況和各層沉積順序的不同,非晶硅薄膜太陽電池可分為p-i-n和n-i-p兩種結(jié)構(gòu)。n層和p層共同構(gòu)建非晶硅薄膜太陽能電池的內(nèi)建電場,兩層直接影響電池的開路電壓(Voc),短路電流密度(Jsc),所以n層對整個電池的性能起著重要的作用。 本文通過射頻等離子增強化學氣相沉積(：RF-PECVD),以氫稀釋的硅烷(SiH4)為反應氣體,磷烷(PH3)為摻雜氣體,制備了n型氫化非晶硅(a-Si:H)薄膜。本論文研究磷摻雜濃度,輝光放電功率,襯底溫度對非晶硅薄膜結(jié)構(gòu)和光電性能的影響,薄膜微結(jié)構(gòu)通過XRD和拉曼散射光譜進行表征,薄膜透過率通過紫外可見光分光度計來測試,折射率和消光系數(shù)通過NKD-7000W光學薄膜系統(tǒng)擬合得出,暗電導率通過高阻儀測試。結(jié)果表明：在本實驗條件下沉積的硅薄膜都是非晶態(tài)；非晶硅薄膜折射率在R=0.8%(R=PH3/SiH4)時最大,消光系數(shù)隨著摻雜濃度增加而增大,暗電導率隨著磷摻雜濃度先增加后降低,薄膜表面粗糙度基本不受摻雜濃度影響；非晶硅薄膜折射率隨著輝光功率增大先增加后減小,功率為70W達到最大值3.7,暗電導率在100W最大,最大值為9.32×10-3S/cm；襯底溫度在60～300℃內(nèi)變化,非晶硅薄膜暗電導率是先上升后下降,200℃時電導率值達到最大,為1.88×10-2S/cm。
[Abstract]:At present, amorphous silicon thin film solar cells have been paid more and more attention due to their advantages of low cost, simple process and short energy recovery time. According to the substrate condition and the different deposition sequence of each layer, the amorphous silicon thin film solar cell can be divided into two kinds of structure: p-i-n and n-i-p. N layer and p layer together construct the built-in electric field of amorphous silicon thin film solar cell. Two layers directly affect the open circuit voltage (Voc), short circuit current density (Jsc), so n layer plays an important role in the performance of the whole battery. N type hydrogenated amorphous silicon (a-Si:H) thin films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) with hydrogen diluted silane (SiH4) as reaction gas and phosphorane (PH3) as doping gas. In this paper, the effects of phosphorus doping concentration, glow discharge power and substrate temperature on the structure and photoelectric properties of amorphous silicon thin films were investigated. The microstructure of the films was characterized by XRD and Raman scattering spectra. The transmittance of the film was measured by UV-Vis spectrophotometer, the refractive index and extinction coefficient were fitted by NKD-7000W optical film system, and the dark conductivity was measured by high resistivity instrument. The results show that all the Si films deposited in this experiment are amorphous, the refractive index of amorphous silicon films is the largest at R _ (0.8%) (R=PH3/SiH4), the extinction coefficient increases with the increase of doping concentration, and the dark conductivity increases first and then decreases with the concentration of phosphorus doping. The surface roughness of amorphous silicon films is not affected by doping concentration, the refractive index of amorphous silicon films increases first and then decreases with the increase of glow power, the maximum power is 70 W and the maximum dark conductivity is 100 W, and the maximum value is 9.32 脳 10 ~ (-3) S / cm; The dark conductivity of amorphous silicon thin films increases first and then decreases at 200 鈩，

本文編號：2157875