水熱法制備納米ZnO晶體及其發(fā)光性質(zhì)研究
發(fā)布時(shí)間：2018-07-24 07:49
【摘要】： 近年來(lái),信息技術(shù)應(yīng)用發(fā)展迅猛,計(jì)算機(jī)等電子設(shè)備日新月異,新型光電材料作為其載體,受到科研工作者空前關(guān)注。納米ZnO室溫下帶隙寬度3.37eV,激子束縛能60meV,在短波長(zhǎng)發(fā)光器件、壓電傳感器、透明導(dǎo)電極、太陽(yáng)能電池等領(lǐng)域廣闊的應(yīng)用前景。納米ZnO形貌豐富,如量子點(diǎn)、納米線、納米棒、納米管、納米環(huán)以及量子阱等,隨著結(jié)構(gòu)的不同,納米ZnO表現(xiàn)出許多優(yōu)異的光電性能,因此,納米ZnO可控生長(zhǎng)具有重要意義。本文以獲得不同形貌的納米ZnO材料為出發(fā)點(diǎn),以典型形貌的可控制備為重點(diǎn),進(jìn)一步研究其微觀結(jié)構(gòu)與宏觀性質(zhì)的關(guān)系。 首先,概述納米ZnO材料的研究進(jìn)展,簡(jiǎn)要介紹納米ZnO材料的各種制備方法,比較各種方法之間的優(yōu)缺點(diǎn)。重點(diǎn)介紹本小組采用低溫水熱法,在此基礎(chǔ)上添加多種可溶性離子鹽,制備不同形貌的納米ZnO顆粒。以六水硝酸鋅(Zn(N03)2·6H20)和六甲基四胺(C6H12N4)的混合水溶液為母液,添加多種可溶性離子鹽(NaCl,、NaF,、KCl,、C6H5Na3O7、Na2SO4、K2SO4,、NiNO3Na2CH3COOH、Na2CO3等),控制反應(yīng)溫度和離子鹽的濃度,分別得到六棱柱狀、花狀、球狀、帶狀、片狀等形貌納米ZnO晶體。通過(guò)改變實(shí)驗(yàn)條件,研究離子鹽種類(lèi)、濃度、溫度等制備工藝參數(shù)對(duì)形貌生長(zhǎng)的影響。分析實(shí)驗(yàn)結(jié)果后得出結(jié)論：可溶性離子鹽的引入,對(duì)納米ZnO的形貌生長(zhǎng)有重要影響,利用此方法有望實(shí)現(xiàn)納米ZnO形貌的可控生長(zhǎng)。 其次,納米ZnO材料的光電性能與其生長(zhǎng)過(guò)程和結(jié)晶質(zhì)量有著密切的聯(lián)系。利用多種表征手段對(duì)不同形貌的納米ZnO材料進(jìn)行結(jié)構(gòu)分析,結(jié)合晶體結(jié)晶成核理論,分析樣品生長(zhǎng)機(jī)理和缺陷來(lái)源。通過(guò)測(cè)量各種形貌納米ZnO的拉曼圖譜,分析各個(gè)樣品特征峰的強(qiáng)度,位置和峰位的移動(dòng),達(dá)到對(duì)其內(nèi)部結(jié)構(gòu)的認(rèn)識(shí)。通過(guò)測(cè)量各種形貌納米ZnO的光致發(fā)光譜,對(duì)發(fā)光峰的強(qiáng)度,位置和峰位的移動(dòng),結(jié)合發(fā)光理論,定性分析表明,晶體內(nèi)的缺陷類(lèi)型主要為氧空位,氧空位的濃度不同造成發(fā)光強(qiáng)度發(fā)生變化,同時(shí),摻入的離子鹽種類(lèi)不同,缺陷的包裹環(huán)境不同,發(fā)光峰位出現(xiàn)移動(dòng)。進(jìn)一步的研究將解釋發(fā)光性質(zhì)與缺陷之間的關(guān)系。
[Abstract]:In recent years, with the rapid development of information technology and the rapid development of electronic equipment such as computers, new optoelectronic materials have been paid more and more attention by researchers. The band gap width of nanometer ZnO is 3.37 EV at room temperature, and the exciton binding energy is 60 MEV. It has a wide application prospect in the field of short-wavelength luminescent devices, piezoelectric sensors, transparent conductors, solar cells and so on. The morphology of nanocrystalline ZnO is abundant, such as quantum dots, nanowires, nanorods, nanotubes, nanometers and quantum wells, etc. With the different structures, nanocrystalline ZnO exhibits many excellent optoelectronic properties. Therefore, the controllable growth of nanocrystalline ZnO is of great significance. In this paper, the relationship between microstructure and macroscopical properties of nanosized ZnO materials with different morphologies is further studied by focusing on the controllable preparation of typical morphologies. Firstly, the research progress of nano ZnO materials is summarized, and the preparation methods of nano ZnO materials are briefly introduced, and the advantages and disadvantages of different methods are compared. This paper focuses on the preparation of ZnO nanoparticles with different morphologies by using low temperature hydrothermal method and adding various soluble ionic salts. The mixed aqueous solution of zinc nitrate hexahydrate (Zn (N03) 2 6H20) and hexamethyltetramine (C6H12N4) was used as the mother liquor. The hexagonal column, flower, globular, banded, hexagonal columnar, flower-shaped, globular, banded, hexagonal columnar, flower-like, globular, banded, and so on were obtained by controlling the reaction temperature and the concentration of ionic salt, respectively. Nanocrystalline ZnO crystals with flake morphology. By changing the experimental conditions, the effects of the kinds of ionic salts, the concentration and the temperature on the morphology growth were studied. After analyzing the experimental results, it is concluded that the introduction of soluble ionic salts has an important effect on the morphology growth of nanometer ZnO, and this method is expected to realize the controllable growth of nanometer ZnO morphology. Secondly, the optoelectronic properties of nanometer ZnO materials are closely related to their growth process and crystallization quality. The structure of nanocrystalline ZnO materials with different morphologies was analyzed by various characterization methods. The growth mechanism and defect source of the samples were analyzed based on the crystal crystallization nucleation theory. By measuring the Raman spectra of various morphologies of nanometer ZnO, the intensity, position and movement of the characteristic peaks of each sample were analyzed, so that the internal structure of the samples could be understood. By measuring the photoluminescence spectra of various morphologies of nanometer ZnO, the intensity, position and shift of the luminescence peaks are measured. Combined with the luminescence theory, the qualitative analysis shows that the defect types in the crystals are mainly oxygen vacancies. The concentration of oxygen vacancy causes the change of luminescence intensity, at the same time, different kinds of ion salts doped, the surrounding environment of defects are different, and the peak position of luminescence shift. Further research will explain the relationship between luminous properties and defects.
【學(xué)位授予單位】：蘭州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2010
【分類(lèi)號(hào)】：TB383.1
本文編號(hào)：2140708
[Abstract]:In recent years, with the rapid development of information technology and the rapid development of electronic equipment such as computers, new optoelectronic materials have been paid more and more attention by researchers. The band gap width of nanometer ZnO is 3.37 EV at room temperature, and the exciton binding energy is 60 MEV. It has a wide application prospect in the field of short-wavelength luminescent devices, piezoelectric sensors, transparent conductors, solar cells and so on. The morphology of nanocrystalline ZnO is abundant, such as quantum dots, nanowires, nanorods, nanotubes, nanometers and quantum wells, etc. With the different structures, nanocrystalline ZnO exhibits many excellent optoelectronic properties. Therefore, the controllable growth of nanocrystalline ZnO is of great significance. In this paper, the relationship between microstructure and macroscopical properties of nanosized ZnO materials with different morphologies is further studied by focusing on the controllable preparation of typical morphologies. Firstly, the research progress of nano ZnO materials is summarized, and the preparation methods of nano ZnO materials are briefly introduced, and the advantages and disadvantages of different methods are compared. This paper focuses on the preparation of ZnO nanoparticles with different morphologies by using low temperature hydrothermal method and adding various soluble ionic salts. The mixed aqueous solution of zinc nitrate hexahydrate (Zn (N03) 2 6H20) and hexamethyltetramine (C6H12N4) was used as the mother liquor. The hexagonal column, flower, globular, banded, hexagonal columnar, flower-shaped, globular, banded, hexagonal columnar, flower-like, globular, banded, and so on were obtained by controlling the reaction temperature and the concentration of ionic salt, respectively. Nanocrystalline ZnO crystals with flake morphology. By changing the experimental conditions, the effects of the kinds of ionic salts, the concentration and the temperature on the morphology growth were studied. After analyzing the experimental results, it is concluded that the introduction of soluble ionic salts has an important effect on the morphology growth of nanometer ZnO, and this method is expected to realize the controllable growth of nanometer ZnO morphology. Secondly, the optoelectronic properties of nanometer ZnO materials are closely related to their growth process and crystallization quality. The structure of nanocrystalline ZnO materials with different morphologies was analyzed by various characterization methods. The growth mechanism and defect source of the samples were analyzed based on the crystal crystallization nucleation theory. By measuring the Raman spectra of various morphologies of nanometer ZnO, the intensity, position and movement of the characteristic peaks of each sample were analyzed, so that the internal structure of the samples could be understood. By measuring the photoluminescence spectra of various morphologies of nanometer ZnO, the intensity, position and shift of the luminescence peaks are measured. Combined with the luminescence theory, the qualitative analysis shows that the defect types in the crystals are mainly oxygen vacancies. The concentration of oxygen vacancy causes the change of luminescence intensity, at the same time, different kinds of ion salts doped, the surrounding environment of defects are different, and the peak position of luminescence shift. Further research will explain the relationship between luminous properties and defects.
【學(xué)位授予單位】：蘭州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2010
【分類(lèi)號(hào)】：TB383.1
【參考文獻(xiàn)】
相關(guān)期刊論文 前2條
1 王久亮,劉寬,秦秀娟,邵光杰;納米氧化鋅的應(yīng)用研究展望[J];哈爾濱工業(yè)大學(xué)學(xué)報(bào);2004年02期
2 蔡連和;氧化鋅在面磚釉料中的應(yīng)用[J];陶瓷工程;1994年04期
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