本文選題：直流電弧放電 + 新型碳納米材料�。� 參考：《天津大學》2010年碩士論文

【摘要】：碳納米材料是納米材料的一個重要分支,其相關(guān)研究已經(jīng)成為當前國際上最活躍的前沿領(lǐng)域之一。本文采用直流電弧放電法,在氮氣氣氛下,主要考察了碳源、氮氣溫度、基片放置位置對放電產(chǎn)物形貌及收率的影響;借助掃描電子顯微鏡(SEM)、透射電子顯微鏡(TEM)、選區(qū)電子衍射(SAED)表征方法,對放電產(chǎn)物的形貌、微觀結(jié)構(gòu)進行了表征。本文還采用焙燒方法對電弧放電實驗所用的碳源進行了篩選。 SEM表征結(jié)果表明,在放置于電弧放電區(qū)域上面和下面的基片上,使用碳黑為碳源比石墨為碳源更有利于生成準網(wǎng)狀結(jié)構(gòu)產(chǎn)物,但在放置于電弧放電區(qū)域側(cè)面的基片上則相反;在放置于電弧放電區(qū)域上面和側(cè)面的基片上,氮氣進氣溫度為800℃時比氮氣進氣溫度為室溫時更有利于生成準網(wǎng)狀結(jié)構(gòu)產(chǎn)物,但以碳黑為碳源時,在放置于電弧放電區(qū)域下面的基片上則相反。不銹鋼片的放置位置對于其表面生成產(chǎn)物的形貌的影響無明顯的規(guī)律性。在多數(shù)條件下,在不銹鋼片上均生成表面類似動物胃壁的絨球狀產(chǎn)物,但無明顯的規(guī)律性。 TEM表征結(jié)果表明,在放置于電弧放電區(qū)域側(cè)面和下面的基片上,使用碳黑為碳源比石墨為碳源更有利于生成納米顆粒;但在放置于電弧放電區(qū)域上面的基片上,氮氣進氣溫度為室溫時則相反;在放置于電弧放電區(qū)域上面的基片上,氮氣進氣溫度為室溫比氮氣進氣溫度為800℃時更有利于生成尺寸較小的納米顆粒;但在放置于電弧放電區(qū)域下面的基片上則相反�；姆胖梦恢脤τ谄浔砻嫔僧a(chǎn)物的形貌的影響是:在放置于電弧放電區(qū)域上面的基片上均是以納米顆粒為主;但在放置于電弧放電區(qū)域側(cè)面和下面的基片上除生成納米顆粒外,還有少量的納米管,多數(shù)都有片狀單晶物。 焙燒實驗結(jié)果表明,碳黑與石墨樣品分別在焙燒溫度達到540℃、730℃時被完全氧化,均可以作為本放電實驗的碳源;活性炭在焙燒溫度達到750℃時仍不能被完全氧化,不適宜作為本放電實驗的碳源。 本課題的研究結(jié)果為制備新型碳膜及碳納米材料開辟了新的途徑,對于推動相關(guān)領(lǐng)域的研究工作具有重要的實際意義。
[Abstract]:Carbon nanomaterials are an important branch of nanomaterials, and their related research has become one of the most active frontier fields in the world. In this paper, the effects of carbon source, nitrogen temperature and substrate position on the morphology and yield of discharge products were investigated in nitrogen atmosphere by DC arc discharge method. The morphology and microstructure of the discharge products were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selective electron diffraction (Saed). The carbon sources used in arc discharge experiments were also screened by roasting method. The SEM results showed that the carbon source was placed on the substrates above and below the arc discharge region. The use of carbon black as a carbon source is more conducive to the formation of quasireticular products than graphite, but the opposite is true on the substrate placed on the side of the arc discharge region, and on the substrate placed above and on the side of the arc discharge region. When nitrogen inlet temperature is 800 鈩，

本文編號：2115509