本文選題：硅納米線 + 濕法化學刻蝕法��； 參考：《東北師范大學》2010年碩士論文

【摘要】： 由于硅是間接帶隙半導體,T=0K時,帶隙寬度Eg=1.17eV,T=300K時,帶隙寬度Eg=1.14eV,其導帶底和價帶頂位于波矢量空間的不同位置,在滿足動量守恒的條件下,只有借助聲子作用才能實現(xiàn)間接帶隙半導體躍遷發(fā)光。但一維硅納米線具有高表面活性和量子限制效應,可獲得較強的發(fā)光,因而硅納米線的研究極為重要。 本論文利用選擇性刻蝕方法,采用濕法化學刻蝕法制備硅納米陣列結(jié)構(gòu),討論了生長時間、氫氟酸濃度、硝酸銀溶液濃度、反應溫度對硅納米線形貌的影響,以及對硅納米線Raman光譜的影響。 通過分析不同條件下制備的硅納米線的SEM圖像,當反應溫度為50℃,5mol/L氫氟酸,0.02mol/L AgNO_3溶液,且氫氟酸與硝酸銀的體積比V(HF):V( AgNO 3)=1:4,生長1h以后制備的硅納米線形貌最好,形成了典型的納米線陣列結(jié)構(gòu),納米線長度為30微米左右,直徑為15-50nm。樣品的Raman主峰位于519.2 cm~(-1) ,半高寬為3.1 cm~(-1)。 高氫氟酸濃度和高生長溫度生長的硅納米線,由于樣品中存在大量的缺陷,造成硅納米線中聲子頻率變化,導致聲子壽命減小,譜線的半高寬增大,從而觀察到5.5mol/L氫氟酸生長的樣品具有高達7.6 cm~(-1)譜線半高寬以及75℃生長的樣品具有高達5.7 cm~(-1)的譜線半高寬。
[Abstract]:Because silicon is an indirect band-gap semiconductor (T _ (0) K), the band gap width (E _ (1) 17eV ~ (T) ~ (300) K) is 1.14 EV. The bottom of the conduction band and the top of the valence band are located at different positions in the wave vector space, and the momentum conservation is satisfied. Only by phonon interaction can indirect band gap semiconductor transition luminescence be realized. However, the one-dimensional silicon nanowires have high surface activity and quantum confinement effect, so the study of silicon nanowires is very important. In this paper, silicon nanowires were prepared by wet chemical etching with selective etching method. The effects of growth time, concentration of hydrofluoric acid, concentration of silver nitrate solution and reaction temperature on the morphology of silicon nanowires were discussed. And the effect on Raman spectra of silicon nanowires. The SEM images of silicon nanowires prepared under different conditions were analyzed. When the reaction temperature was 50 鈩，

本文編號：2104317