本文選題：超聲噴霧法 + Cr摻雜ZnO薄膜�。� 參考：《光譜學(xué)與光譜分析》2016年05期

【摘要】：用注射超聲噴霧法將前驅(qū)體由針管直接送入超聲噴頭內(nèi),在石英基板上制備Zn_(1-x)Cr_xO(x=0.0,0.01,0.03,0.05)薄膜。采用X射線衍射儀、掃描電子顯微鏡、熒光光譜儀、紫外-可見分光光度計(jì)、振動(dòng)樣品磁強(qiáng)計(jì)(VSM)等對(duì)薄膜的結(jié)構(gòu)、光學(xué)和磁學(xué)性質(zhì)進(jìn)行測(cè)量。實(shí)驗(yàn)結(jié)果表明,未摻雜的ZnO薄膜為六角纖鋅礦結(jié)構(gòu),沿著c軸(002)擇優(yōu)取向,而Cr摻雜抑制了薄膜的c軸擇優(yōu)取向性;摻雜后的薄膜平均晶粒尺寸均增大,且當(dāng)x=3%時(shí),晶粒尺寸最大,達(dá)31.4nm。掃描電鏡(SEM)下薄膜呈球形顆粒狀,并且在x=5%下,薄膜出現(xiàn)了長(zhǎng)條狀的微觀形貌。Cr摻雜使樣品的光致發(fā)光譜(PL)發(fā)生了很大的變化:未摻雜的樣品的PL譜在378nm處存在一個(gè)紫外發(fā)射峰,對(duì)應(yīng)于550nm附近還存在一個(gè)由于缺陷態(tài)引起的綠光發(fā)射峰;摻Cr樣品只有在350~550nm的很寬的范圍內(nèi)存在一個(gè)發(fā)射峰,對(duì)其進(jìn)行高斯擬合后,發(fā)現(xiàn)摻Cr量為x=1%,3%,5%下樣品均存在V_(Zn)(鋅空位)、Zn_i(Zn間隙位)、V_(Zn)~-(帶一個(gè)電子的鋅空位)內(nèi)部缺陷態(tài),且當(dāng)x=3%時(shí),V_(Zn)最多。Cr的摻雜使得薄膜的帶隙增大,并且x=3%時(shí),禁帶寬度最大,達(dá)到3.374eV。摻Cr的三個(gè)樣品均具有室溫鐵磁性,且x=3%樣品的磁化強(qiáng)度最大,其與V_(Zn)(鋅空位)最大相對(duì)應(yīng),驗(yàn)證了Cr~(3+)和V_(Zn)的缺陷復(fù)合體是ZnO∶Cr樣品具有穩(wěn)定的鐵磁有序的最有利條件的理論預(yù)測(cè)。
[Abstract]:Zn _ (1-x) Cr _ XO (x _ (0.01) Cr _ (1-x) Cr _ (1-x) Cr _ XO (x _ (0.01) C _ (0.01) O) thin films were deposited on quartz substrate by injecting ultrasonic spray method into the ultrasonic nozzle directly from the needle tube. The structure, optical and magnetic properties of the films were measured by X-ray diffractometer, scanning electron microscope, fluorescence spectrometer, UV-Vis spectrophotometer and vibrating sample magnetometer (VSM). The experimental results show that the undoped ZnO thin films are hexagonal wurtzite with preferred orientation along the c-axis (002), while Cr doping inhibits the c-axis orientation, and the average grain size of the doped ZnO films increases, and the average grain size increases when x = 3. The maximum grain size is 31.4 nm. Under scanning electron microscope (SEM), the film was spherical and granular, and at 5% XN, The photoluminescence spectra (PL) of the films changed greatly due to the appearance of long stripe morphology. Cr doping: the PL spectra of the undoped samples have a UV emission peak at 378nm. There is a green emission peak due to the defect state in the vicinity of 550nm, and there is only one emission peak for Cr doped samples in a very wide range of 350~550nm, which is fitted by Gao Si. It is found that there is a defect state in VZn (Zn gap) VZn (Zn gap)-(Zn vacancy with one electron) in the samples with 5% Cr doping, and the band gap increases when x = 3, and the band gap reaches 3.374eV when x = 3. The three Cr doped samples are ferromagnetic at room temperature, and the magnetization of XN 3% sample is the largest, which corresponds to the maximum V _ (Zn) (zinc vacancy). The defect complexes of Cr ~ (3) and V _ (Zn) were proved to be the most favorable conditions for the stable ferromagnetic ordering of ZnO: Cr samples.
【作者單位】： 福建師范大學(xué)物理與能源學(xué)院福建省量子調(diào)控與新能源材料重點(diǎn)實(shí)驗(yàn)室;福建省半導(dǎo)體光電材料及其高效轉(zhuǎn)換器件協(xié)同創(chuàng)新中心;
【基金】：國(guó)家重點(diǎn)基礎(chǔ)研究發(fā)展計(jì)劃(973)項(xiàng)目(2011CBA00200) 國(guó)家自然科學(xué)基金項(xiàng)目(61574037,11004039) 福建省重大專項(xiàng)項(xiàng)目(2013HZ0003) 教育廳B類項(xiàng)目(JB14028)資助
【分類號(hào)】：O484.4
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本文編號(hào)：2052424