本文選題：反應(yīng)濺射 + 過渡層��； 參考：《電子科技大學(xué)》2010年碩士論文

【摘要】： 第二代YBCO高溫超導(dǎo)帶材具有更高的臨界電流密度和更優(yōu)的高場(chǎng)下性能,使其成為最具發(fā)展應(yīng)用前景的超導(dǎo)帶材,為各國所廣泛關(guān)注。而在柔性的NiW合金基帶上進(jìn)行YBCO薄膜的生長,必須解決超導(dǎo)層與金屬基帶的晶格失配和互擴(kuò)散問題。因此,高質(zhì)量緩沖層的制備就成為了YBCO帶材發(fā)展的關(guān)鍵。由于磁控反應(yīng)濺射具有工藝簡單、易于操作等特點(diǎn),本論文使用直流磁控反應(yīng)濺射法在Ni-5at.%W合金基帶上進(jìn)行三層緩沖層Y_2O_3/YSZ/CeO_2(YYC)的研究制備。具體內(nèi)容如下: 1、采用直流磁控反應(yīng)濺射方法制備Y_2O_3種子層,通過對(duì)沉積溫度、水分壓、總氣壓及卷繞速率的研究,尋找到最優(yōu)薄膜生長工藝。在此工藝下制備的Y_2O_3種子層為完全c軸取向,面內(nèi)外半高寬(△φ,△ω)分別為5.4°, 4.4°,表面均方根(RMS)粗糙度為4.3nm。 2、在Y_2O_3種子層的基礎(chǔ)上繼續(xù)進(jìn)行阻擋層YSZ和模板層CeO_2的生長,成功制備出面內(nèi)外半高寬分別為5.8°和3.9°,表面粗糙度(RMS)為6.2nm的YYC緩沖層。采用電子背散射衍射(EBSD)分析CeO_2模板層的均勻性,結(jié)果表明CeO_2表面均勻致密,小角度晶界均在10度以下。 3、對(duì)YYC緩沖層進(jìn)行雙面一致性分析得到,雙面緩沖層的面內(nèi)外半高寬差異均小于0.3°,晶粒粒徑均小于70nm,表面粗糙度(RMS)差異小于0.5nm。50cm緩沖層帶材各層薄膜△φ在5°與6°之間,△ω在4°與6°之間,模板層CeO_2的△φ變化量小于0.5°,△ω變化量小于1°,表面粗糙度RMS在6nm與7nm之間。 4、在YYC三層緩沖層上進(jìn)行YBCO超導(dǎo)層的生長,分別從種子層、阻擋層和模板層研究各層對(duì)YBCO超導(dǎo)層的影響。在YYC緩沖層上制備的YBCO帶材面內(nèi)外取向分別為5.3°和3.2°,單面最高Jc值為1.3MA/cm~2,雙面最高Jc值為1.0 MA/cm~2。
[Abstract]:The second generation YBCO high temperature superconducting tape with higher critical current density and better performance under high field makes it become the most promising superconducting tape which has been widely concerned by many countries. The problem of lattice mismatch and interdiffusion between superconducting layer and metal substrate must be solved when YBCO thin film is grown on flexible NiW alloy substrate. Therefore, the preparation of high-quality buffer layer has become the key to the development of YBCO strip. Because the magnetron reactive sputtering has the characteristics of simple process and easy operation, a three-layer buffer layer Y _ 2O _ 3 / YSZ / CEO _ 2Y _ YYC _ Cwas prepared on Ni-5at.W alloy base band by DC magnetron reactive sputtering. The main contents are as follows: 1. Ys _ 2O _ 3 seed layer was prepared by DC magnetron reactive sputtering. Through the study of deposition temperature, water pressure, total pressure and winding rate, the optimal growth process of Ys _ 2O _ 3 thin film was found. The seed layer of Ys _ 2O _ 3 prepared under this process is completely c-oriented, and the in-plane half-maximum width (蠁, 蠅) is 5.4 擄and 4.4 擄, respectively, and the roughness of RMSs is 4.3 nm 路2. The growth of the blocking layer YSZ and the template layer CeOS2 is continued on the basis of the Y _ 2O _ 3 seed layer. The YYC buffer layer was successfully prepared with the half-width of 5.8 擄and 3.9 擄, respectively, and the surface roughness (RMS) was used as the buffer layer of 6.2nm. Electron backscatter diffraction (EBSD) was used to analyze the uniformity of CEO _ 2 template layer. The results showed that the surface of CEO _ 2 was homogeneous and dense, and the grain boundaries of small angle were all below 10 degrees. The results of double-sided consistency analysis of YYC buffer layer were obtained. The difference in the width of both sides of buffer layer is less than 0.3 擄, the grain size is less than 70 nm, the difference of surface roughness is less than that of 0.5nm.50cm buffer layer film 蠁 is between 5 擄and 6 擄, 蠅 is between 4 擄and 6 擄. The 蠁 variation of CeO2 and 蠅 are less than 0.5 擄and 1 擄, respectively. The surface roughness is between 6nm and 7nm. 4. YBCO superconducting layer is grown on YYC three-layer buffer layer from seed layer, respectively. The influence of each layer on YBCO superconducting layer is studied. The in-plane and in-plane orientations of YBCO strips prepared on YYC buffer layer are 5.3 擄and 3.2 擄, respectively. The highest JC on one side is 1.3 Ma / cm ~ (-2), and the highest value on both sides is 1.0 Ma / cm ~ (2).
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2010
【分類號(hào)】：TM26

【引證文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前1條

1 馮嘯;YBCO涂層導(dǎo)體用YSZ阻擋層的快速制備研究[D];電子科技大學(xué);2012年

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本文編號(hào)：2004910