本文選題：腐蝕 + 選擇性發(fā)射極　； 參考：《北京交通大學》2011年碩士論文

【摘要】：摘要：本文主要研究了腐蝕法制備單晶硅選擇性發(fā)射極太陽能電池。 選擇性發(fā)射極的核心是表面的重/輕摻雜區(qū)發(fā)射極,本文通過深入的研究最終確定了制備單晶硅選擇性發(fā)射極太陽能電池的新擴散和腐蝕工藝：重擴散方阻為35Ω/□,腐蝕后非電極區(qū)方阻在70-105Ω/□之間為佳。掩膜印刷和電極印刷兩者的對位印刷對選擇性發(fā)射極太陽能電池的制備也很重要,本文通過實驗分析了印刷機和刮刀對對位印刷的影響。發(fā)現(xiàn)同一臺印刷機,同一塊正銀網(wǎng)版,同一套刮刀,對位精度高；同一臺印刷機,正銀與掩膜網(wǎng)版配套,印刷掩膜和正銀不是同一套刮刀,對位存在問題,但基本滿足要求。 最后通過實驗片和正常片的測試結(jié)果對比,研究了選擇性發(fā)射極太陽能電池對基本特征參數(shù)的影響,通過實驗發(fā)現(xiàn),SE工藝在開路電壓Voc上增加了0.008V,在短路電流Jsc上增加了0.31A,在填充因子FF上增加了0.89,在效率上提高了0.72%。
[Abstract]:Abstract: the preparation of monocrystalline silicon selective emitter solar cells by corrosion method was studied in this paper. The core of the selective emitter is the heavy / light doped emitter on the surface. In this paper, the new diffusion and corrosion process for the preparation of monocrystalline silicon selective emitter solar cell is determined through in-depth study: the heavy diffusion square resistance is 35 惟 / -, The square resistance of the non-electrode region after corrosion is between 70 and 105 惟 / -. The opposite printing of mask printing and electrode printing is also very important for the preparation of selective emitter solar cells. In this paper, the effects of printing press and scraper on position printing are analyzed experimentally. It is found that the same printing machine, the same block of silver screen plate, the same set of scraper, and the same printing machine, the positive silver and the mask plate are matched, the printing mask and the positive silver are not the same set of scraper, and there are problems in the opposite position, but basically meet the requirements. Finally, the effects of selective emitter solar cells on the basic characteristic parameters are studied by comparing the experimental results with the normal ones. The experimental results show that the open circuit voltage (Voc), short circuit current (Jsc) and filling factor (FF) are increased by 0.008V, 0.31A, 0.89 and 0.72%, respectively, in the open circuit voltage (Voc), the short-circuit current (Jsc) and the filling factor (FF).
【學位授予單位】：北京交通大學
【學位級別】：碩士
【學位授予年份】：2011
【分類號】：TM914.4

【引證文獻】

相關(guān)期刊論文 前2條

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2 張孫浩琛;虞錚棟;王強;;選擇性擴散方式對硅基選擇性發(fā)射極太陽電池性能的影響[J];南通職業(yè)大學學報;2013年03期

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本文編號：1957050