發(fā)布時間：2018-05-18 12:39

  本文選題：氧化鎘 + 脈沖激光沉積��； 參考：《吉林大學(xué)》2010年碩士論文

【摘要】： 本文使用脈沖激光沉積法(PLD)制備了銦摻雜氧化鎘(In-CdO)透明導(dǎo)電薄膜,實驗以Cd-In合金為靶材,在氧氣氣氛下以石英玻璃為基體進行薄膜沉積。深入研究了薄膜中In含量以及沉積基體溫度對In-CdO薄膜結(jié)構(gòu)和光電性能的影響。研究發(fā)現(xiàn),薄膜的結(jié)構(gòu)及光電性能對In含量以及沉積基體溫度變化敏感。In摻雜減弱了薄膜(200)晶面的優(yōu)勢生長,且使晶格常數(shù)有微小變化。所有的In-CdO薄膜在可見光區(qū)域內(nèi)都呈現(xiàn)出較高的透光率,特別是在波長500 nm左右的區(qū)域呈現(xiàn)出最高的透光率,這是太陽光譜能量最強的波段。當In的濃度達到3.9 wt%時,In-CdO薄膜具有最高的載流子濃度及最低的電阻率,且禁帶寬度明顯增加。當In的濃度進一步增加至5.6 wt%時,薄膜中有In2O3形成,導(dǎo)致In-CdO薄膜的光電性能略微降低。當沉積溫度為100°C和200°C時,得到的薄膜是In-CdO與Cd的復(fù)合薄膜�；w溫度升高,薄膜的(200)晶面衍射峰強度降低,晶格常數(shù)逐漸減小。在300°C基體溫度下沉積的薄膜的晶粒最均勻,表面最致密平滑,且獲得了最低的電阻率和最高的載流子濃度與遷移率。當薄膜沉積溫度從300°C升至500°C時,出現(xiàn)了沉積基體溫度升高,載流子濃度降低,禁帶寬度反而增大的現(xiàn)象。
[Abstract]:In this paper, indium doped cadmium oxide In-CdO (In-CdO) transparent conductive thin films were prepared by pulsed laser deposition (PLD). Cd-In alloy was used as the target and quartz glass as substrate in oxygen atmosphere. The effects of in content and substrate temperature on the structure and optoelectronic properties of In-CdO thin films were investigated. It is found that the structure and photoelectric properties of the films are sensitive to the changes of in content and substrate temperature. Doping in weakens the dominant growth of the films and makes the lattice constants change slightly. All In-CdO thin films exhibit high transmittance in the visible region, especially the highest transmittance in the wavelength of 500nm, which is the most energy band of the solar spectrum. When the concentration of in is 3.9 wt%, the film has the highest carrier concentration and the lowest resistivity, and the band gap increases obviously. When the concentration of in is further increased to 5.6 wt%, In2O3 is formed in the film, which results in a slight decrease in the photoelectric properties of the In-CdO film. When the deposition temperature is 100 擄C and 200 擄C, the film is a composite film of In-CdO and CD. With the increase of substrate temperature, the diffraction peak intensity of crystal plane decreases and the lattice constant decreases. The films deposited at 300 擄C substrate temperature have the most uniform grain size, the most compact and smooth surface, and the lowest resistivity, the highest carrier concentration and mobility. When the deposition temperature increases from 300 擄C to 500 擄C, the substrate temperature increases, the carrier concentration decreases and the band gap increases.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2010
【分類號】：TN304

【共引文獻】

相關(guān)期刊論文 前10條

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