本文選題：石墨烯 + 化學(xué)氣相沉積　； 參考：《人工晶體學(xué)報(bào)》2017年06期

【摘要】：利用化學(xué)氣相沉積法在拋光銅襯底上制備出六角形石墨烯晶疇,并對(duì)石墨烯晶疇進(jìn)行氧氣刻蝕�？涛g完成后,利用光學(xué)顯微鏡和掃描電子顯微鏡觀察到石墨烯晶疇表面的褶皺被刻蝕成網(wǎng)絡(luò)狀和短線狀形貌的刻蝕條紋,并且刻蝕條紋的密度分布差異較大。通過(guò)電子背散射衍射測(cè)試證明了銅襯底的晶向與褶皺的形貌和密度分布有密切關(guān)系,不同的銅襯底晶向會(huì)影響褶皺的形貌和密度分布。通過(guò)改變刻蝕時(shí)間和刻蝕溫度,發(fā)現(xiàn)刻蝕溫度對(duì)石墨烯的氧氣刻蝕具有更重要的影響,當(dāng)刻蝕溫度高于250℃時(shí),刻蝕速率明顯提高。這種氧氣刻蝕方法,為觀察石墨烯表面褶皺的形態(tài)和密度分布提供了一種便捷的途徑。
[Abstract]:Hexagonal graphene domains were prepared on polished copper substrates by chemical vapor deposition, and the graphene domains were etched by oxygen. After etching, the folds of graphene domain surface were etched into network-like and short-line stripes by optical microscope and scanning electron microscope, and the density distribution of etching stripes varied greatly. The results of electron backscatter diffraction show that the crystal direction of copper substrate is closely related to the morphology and density distribution of the fold, and the different orientation of the copper substrate will affect the morphology and density distribution of the fold. By changing the etching time and etching temperature, it is found that the etching temperature has a more important effect on the oxygen etching of graphene. When the etching temperature is above 250 鈩，

本文編號(hào)：1807554