發(fā)布時(shí)間：2018-04-14 09:03

  本文選題：CIGS薄膜 + PLD��； 參考：《內(nèi)蒙古大學(xué)》2011年碩士論文

【摘要】：太陽電池作為發(fā)展最快的清潔能源,具有無噪聲、無污染、不受地域限制、利用成本低等特點(diǎn),近幾年來薄膜電池得到了高速發(fā)展。以CuInGaSe2(簡稱CIGS)為吸收層的薄膜太陽電池是在玻璃或者其它廉價(jià)襯底上沉積6層以上化合物半導(dǎo)體和金屬薄膜材料,薄膜總厚度約3-4μm。該電池成本低、性能穩(wěn)定、抗輻射能力強(qiáng),其光電轉(zhuǎn)換效率高,被稱為最有前途的廉價(jià)太陽電池之一。 對(duì)CIGS吸收層薄膜的研究,本論文主要包括兩方面的內(nèi)容：(1)用脈沖激光沉積(PLD)法制備了不同成分比例的CIG預(yù)制膜,在硒化條件相同的情況下制備了CIGS薄膜,系統(tǒng)地研究了激光能量和濺射次數(shù)等工藝參數(shù)對(duì)薄膜結(jié)構(gòu)及形貌的影響；(2)用脈沖激光沉積(PLD)法制備了成分比例相同的CIG預(yù)制膜,在不同的硒化條件下制備了CIGS薄膜,系統(tǒng)地研究了熱處理溫度等工藝參數(shù)對(duì)薄膜結(jié)構(gòu)、形貌及光學(xué)性能的影響。 采用臺(tái)階儀、X射線衍射儀(XRD)、掃描電鏡(SEM)、能譜儀(EDS)、紫外分光光度計(jì)等對(duì)制備的薄膜進(jìn)行了檢測,分析結(jié)果表明：(1)設(shè)定CuGa靶和In靶濺射能量分別為350和250mJ,靶襯間距為35mm,能夠避免In聚集現(xiàn)象；(2)CuGa靶和In靶濺射次數(shù)分別為5和6萬次,硒化后制備出的CIGS薄膜中Cu、In、Ga的原子含量為n_(Cu)/(nIn+nGa)=0.98,nGa/(nIn+nGa)=0.28,這種略微貧Cu和富Se的組分比能夠制備出高質(zhì)量CIGS薄膜；(3)硒化溫度250℃、硒化時(shí)間60min、熱處理溫度550℃、熱處理時(shí)間30min時(shí)制備的薄膜厚度約為1.3μm；顆粒輪廓清晰,大小均勻,尺寸達(dá)到1μm；薄膜表面非常致密,粗糙度和起伏較小,而且與襯底結(jié)合較為緊密；薄膜在可見及紅外區(qū)都有很好的光吸收特性,形成單一黃銅礦結(jié)構(gòu)。
[Abstract]:As the fastest developing clean energy, solar cells have the characteristics of no noise, no pollution, no region restriction, low utilization cost and so on. In recent years, thin film batteries have been developed at a high speed.The thin film solar cells with CuInGaSe2 (CIGS) as the absorption layer are deposited on glass or other cheap substrates with more than 6 layers of compound semiconductors and metal thin films, the total thickness of which is about 3-4 渭 m.The cell has the advantages of low cost, stable performance, strong radiation resistance and high photoelectric conversion efficiency, so it is regarded as one of the most promising cheap solar cells.The main contents of this thesis are as follows: (1) CIG films with different compositions were prepared by pulsed laser deposition. CIGS thin films were prepared under the same conditions of selenization.The effects of laser energy and sputtering times on the structure and morphology of CIG films were studied systematically. The CIG films with the same composition were prepared by pulsed laser deposition. The CIGS films were prepared under different selenization conditions.The effects of heat treatment temperature on the structure, morphology and optical properties of the films were studied systematically.The thin films were examined by step X ray diffractometer, scanning electron microscope (SEM), energy dispersive spectrometer (EDS), ultraviolet spectrophotometer and so on.The results show that the sputtering energy of CuGa target and in target are 350 and 250mJ, respectively, and the distance between them is 35mm, which can avoid the phenomenon of in aggregation. The sputtering times of in target and in target are 5 000 and 60 000 times, respectively.The atomic content of CIGS thin films prepared by selenization is 0.28 n_(Cu)/(nIn NGa0.98 nGaP / nGa0.28. The ratio of Cu and se rich components can be used to fabricate high quality CIGS thin films at 250 鈩，

本文編號(hào)：1748599