本文選題：堿性溶液 + 四甲基氫氧化銨��； 參考：《濟(jì)南大學(xué)》2017年碩士論文

【摘要】：CdTe屬于II-VI族半導(dǎo)體化合物,具有較窄的禁帶寬度(1.45 e V)、較高的光吸收系數(shù)和理論轉(zhuǎn)化效率,作為吸收層材料廣泛應(yīng)用于太陽(yáng)能電池。商業(yè)化CdTe太陽(yáng)能電池組件的轉(zhuǎn)換效率為18.6%,超過(guò)多晶硅組件的17.7%。目前制備CdTe薄膜的方法有磁控濺射法、近空間升華法、氣相傳輸沉積法和電化學(xué)沉積法等。與其他沉積方法相比,電沉積方法操作簡(jiǎn)單、成本低廉、容易控制、成膜均勻致密,十分適合于大面積CdTe半導(dǎo)體薄膜材料的制備。目前大多采用酸性溶液進(jìn)行電沉積,酸性條件下電沉積CdTe薄膜存在著許多問(wèn)題如:沉積速率低、腐蝕Cd S薄膜、薄膜中Te過(guò)量、多孔、界面質(zhì)量差和結(jié)構(gòu)復(fù)雜等�？梢酝ㄟ^(guò)提高酸性沉積溶液中Te O_2的溶解度提高沉積速率,但是高的沉積速率會(huì)增加薄膜中的缺陷,導(dǎo)致器件性能降低。目前關(guān)于堿性溶液的電沉積CdTe的報(bào)道較少。本論文采用一種新的堿性溶液體系電化學(xué)沉積CdTe薄膜,探索薄膜的電化學(xué)沉積機(jī)理以及工藝參數(shù)對(duì)薄膜結(jié)構(gòu)與性質(zhì)的影響。本文的主要研究?jī)?nèi)容與創(chuàng)新點(diǎn)如下:1、Na OH堿性溶液體系中電沉積CdTe薄膜的研究研究不同p H對(duì)Cd~(2+)、Te O_3~(2-)還原電位的影響,p H為9.5時(shí)Te O_3~(2-)開(kāi)始被還原為單質(zhì)Te的還原電位更正為-0.3 V,Cd~(2+)的還原電位不受p H的影響,為-1.05 V。結(jié)合NTA-Na OH-Cd Cl_2-Te O_2電沉積溶液的循環(huán)伏安特性,從而確定碲化鎘的沉積電位范圍在-0.8 V和-1.2 V之間。嘗試采用不同的沉積電位沉積CdTe薄膜,發(fā)現(xiàn):剛沉積的CdTe薄膜相組成隨著沉積電位的變化而變化。在較正的電位下沉積的薄膜六方相較多,而這種六方相的形成與薄膜中過(guò)量的Te有關(guān)。經(jīng)過(guò)退火后,六方相轉(zhuǎn)變?yōu)榱⒎较?并且薄膜具有好的結(jié)晶度和窄的禁帶寬度。相組成隨薄膜組成的變化而變化,這種變化關(guān)系為電化學(xué)沉積CdTe薄膜提供了依據(jù)。2、TMAH堿性溶液體系中電沉積CdTe薄膜的研究為了中和堿性溶液中的羧基,大量的無(wú)機(jī)堿Na OH進(jìn)入溶液,堿金屬離子Na~+會(huì)摻雜CdTe薄膜進(jìn)而破壞器件的性能。為了避免Na~+的引入,采用一種不含金屬離子的有機(jī)強(qiáng)堿四甲基氫氧化銨(TMAH)。整個(gè)沉積過(guò)程中避免引入其他金屬離子,從而減輕對(duì)電沉積獲得的CdTe多晶薄膜結(jié)構(gòu)的影響。主要研究了沉積溫度、光照、沉積電位、NTA/Cd~(2+)絡(luò)合比對(duì)CdTe薄膜組成、結(jié)構(gòu)和性質(zhì)的影響規(guī)律。沉積溫度越高,薄膜的沉積速率越快,在-1.0 V、80℃下沉積的薄膜結(jié)晶性較好,并沿著(111)取向生長(zhǎng)。通過(guò)對(duì)薄膜表面進(jìn)行光照,提高了電化學(xué)制備CdTe半導(dǎo)體薄膜的沉積速率,還提高了CdTe薄膜的結(jié)晶度,-0.8 V光照條件下沉積的薄膜比較符合化學(xué)計(jì)量比,薄膜相組成隨著光照條件的改變而改變。通過(guò)調(diào)控電沉積溶液中絡(luò)合劑的含量控制晶體的取向,在NTA濃度較低的條件下,沿著(111)取向擇優(yōu)生長(zhǎng);當(dāng)溶液中NTA濃度特別高時(shí),以(220)取向?yàn)橹鳌?br/>[Abstract]:CdTe belongs to the II-VI semiconductor compound, with narrow band gap (1.45 e V), the absorption coefficient and the theoretical conversion efficiency of higher light absorption layer, as materials are widely used in solar cells. The conversion of CdTe solar energy efficiency business was 18.6%, more than the polycrystalline silicon components 17.7%. the preparation methods of CdTe thin films the magnetron sputtering method, close space sublimation, vapor transport deposition and electrochemical deposition. Compared with other deposition method, electrodeposition method has the advantages of simple operation, low cost, easy control, uniform and compact film materials, is very suitable for large area CdTe semiconductor thin film preparation. Most of the acidic solution electrodeposition of electrodeposited CdTe films under acidic conditions exist many problems such as low deposition rate, corrosion of Cd S films, Te films in excess, porous, complex structure and poor quality of the interface can be provided through. The high solubility of acid deposition solution Te O_2 improved the deposition rate, but the high deposition rate will increase the defects in the film, resulting in reduced device performance. At present, few reports on the electrodeposition of CdTe alkaline solution. This paper adopts a new electrochemical deposition system of alkaline solution of CdTe films, to explore the influence of film by electrochemical deposition the mechanism and process parameters on the structure and properties of the films. The main research contents and innovations are as follows: 1, research on Na OH alkaline solution system of Electrodeposited CdTe films on different P H Cd~ (2+), Te O_3~ (2-) reduction potential effects of P H 9.5 Te O_3~ (2-) began to be reduced to the reduction potential of elemental Te corrections for the -0.3 V Cd~ (2+) reduction potential is not affected by the P H, -1.05 V. NTA-Na OH-Cd Cl_2-Te combined with cyclic voltammetry of O_2 electrodeposition solution, so as to determine the deposition potential of cadmium telluride In the range between -0.8 V and -1.2 V. Try to use the deposition potential deposition of CdTe thin films, different found as deposited CdTe thin films phase composition changes with the deposition potential deposition. In the positive potential of the six party in the film, and the six phase formation in excess of Te and in the film about. After annealing, the six phase transition to the cubic phase, and the film has good crystallinity and narrow band gap. The phase composition changes with the film composition and change the relationship between the change of.2 provides a basis for the electrochemical deposition of CdTe thin films, TMAH alkaline solution of Electrodeposited CdTe films to neutralize alkaline solution a large number of carboxyl groups in inorganic alkali Na OH into the solution of alkali metal ions, Na~+ properties of doped CdTe thin films and thus damage the device. In order to avoid the introduction of Na~+, using a metal ion containing organic alkali tetramethyl hydroxide Ammonium bromide (TMAH). The introduction of other metal ions to avoid the deposition process, thereby reducing the effect on the electrical deposition of CdTe polycrystalline thin film structure are investigated. The deposition temperature, illumination, deposition potential, NTA/Cd~ (2+) complex on CdTe film. The influence of structure and properties of the deposition temperature is higher. The deposition rate, more quickly, in -1.0 V, 80 DEG C thin film crystalline deposition is better, and along the (111) orientation. The light through the surface of the film, improve the deposition rate of CdTe semiconductor thin films prepared by electrochemical method, but also improve the crystallinity of CdTe films, -0.8 V light film under the condition of deposition compared with stoichiometric films, phase composition changes with the change of illumination condition. Control the crystal orientation by regulating the contents of the electro deposition solution of complexing agent, the concentration of NTA in the conditions of low along the (111) preferred orientation growth; When the concentration of NTA in the solution is very high, the (220) orientation is dominant.

【學(xué)位授予單位】：濟(jì)南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TQ132.44;TB383.2

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本文編號(hào)：1736522