本文選題：ZnO　切入點(diǎn)：MOCVD　出處：《大連理工大學(xué)》2010年碩士論文

【摘要】： ZnO是一種在藍(lán)光及紫外光電器件領(lǐng)域極有應(yīng)用前途的直接帶隙寬禁帶半導(dǎo)體材料。其室溫下激子束縛能為60 meV,禁帶寬度為3.37 eV,單晶中的電子霍爾遷移率高達(dá)200cm2V-1·s-1。ZnO的優(yōu)良特性使其成為一種制備室溫或更高溫度下短波長、低閾值、高效率半導(dǎo)體光電器件的理想材料。目前制約著ZnO在LED、LD領(lǐng)域發(fā)展的一個(gè)關(guān)鍵因素就是穩(wěn)定、高質(zhì)量、可重復(fù)的p型ZnO的制備還存在著問題。本論文就是針對(duì)這一問題,在使用MOCVD工藝對(duì)ZnO進(jìn)行Sb摻雜方面進(jìn)行了相關(guān)研究。主要的工作包括如下兩個(gè)部分： (1)為研究襯底溫度對(duì)MOCVD法Sb摻雜ZnO的影響,在c面藍(lán)寶石襯底上,在500℃、550℃、600℃這三個(gè)溫度點(diǎn)上分別對(duì)ZnO進(jìn)行了Sb摻雜,并對(duì)薄膜進(jìn)行了X射線衍射(XRD),霍爾(Hall)測試和光致發(fā)光(PL)測試。測試結(jié)果表明,溫度在500℃至550℃之間時(shí),ZnO薄膜的結(jié)晶質(zhì)量隨著襯底溫度的升高而提高,當(dāng)襯底溫度進(jìn)一步升高時(shí),結(jié)晶質(zhì)量開始下降。Hall測試和PL譜測試結(jié)果表明,襯底溫度為550℃的樣品具有最好的電學(xué)和光學(xué)性質(zhì)。 (2)為研究Sb源流量對(duì)MOCVD法Sb摻雜ZnO的影響,結(jié)合上面的實(shí)驗(yàn)結(jié)果,設(shè)定襯底溫度為550℃,同樣選擇c面藍(lán)寶石,分別在Sb源載氣流量0.2sccm、0.3 sccm、0.4 sccm這三個(gè)條件下對(duì)ZnO進(jìn)行了Sb摻雜,并對(duì)薄膜進(jìn)行了X射線衍射(XRD),霍爾(Hall)測試和光致發(fā)光(PL)測試。經(jīng)過綜合對(duì)比發(fā)現(xiàn)摻雜源流量在0.4 sccm時(shí),所生長的薄膜性能較為優(yōu)異,平均晶粒尺寸最大,其XRD衍射譜ZnO(002)衍射峰和室溫PL譜紫外發(fā)射峰的FWHM值最小,分別為0.171°和112.3 meV,樣品為p型導(dǎo)電且空穴濃度和遷移率較高。
[Abstract]:ZnO is a promising direct band gap wide band gap semiconductor material in the field of blue light and ultraviolet optoelectronic devices. The exciton binding energy is 60 MEV at room temperature, the band gap width is 3.37 EV, and the electron Hall mobility in single crystal is as high as 200cm2V-1 s-1.ZnO. Its excellent properties make it a kind of short wavelength for preparation at room temperature or higher. Low threshold, high efficiency semiconductor optoelectronic devices ideal material. At present, one of the key factors restricting the development of ZnO in the field of LED LD is the problem of stable, high quality and repeatable p-type ZnO. The research on SB doping in ZnO by MOCVD process is carried out. The main work includes the following two parts:. In order to study the effect of substrate temperature on ZnO doped with SB by MOCVD method, SB doped ZnO was prepared on c plane sapphire substrate at 500 鈩，

本文編號(hào)：1667629