本文選題：CdSe納米材料　切入點(diǎn)：退火　出處：《無(wú)機(jī)化學(xué)學(xué)報(bào)》2017年12期 　論文類型：期刊論文

【摘要】：采用電化學(xué)沉積法,在陽(yáng)極氧化鋁(AAO)模板中成功制備出CdSe納米管和納米線。利用掃描電子顯微鏡(SEM)、透射電子顯微鏡(TEM)、X射線衍射分析(XRD)和能量色散X射線光譜儀(EDS)對(duì)材料的形貌、結(jié)構(gòu)和元素組成進(jìn)行了表征。借助紫外-可見吸收光譜等對(duì)材料光催化活性進(jìn)行了研究。結(jié)果表明:通過(guò)控制沉積電量可成功制備CdSe納米管和納米線;CdSe納米材料為立方晶型與六方晶型的混合,經(jīng)350℃退火處理后,CdSe納米材料中由立方晶型向六方晶型轉(zhuǎn)變,光照開路電位差值明顯增強(qiáng),在0 V(vs SCE)電位下的光照電流密度也有所提高,光電轉(zhuǎn)換性能增強(qiáng);CdSe納米線的吸收邊在710 nm左右,禁帶寬度約為1.85 eV,CdSe納米管相對(duì)于CdSe納米線具有更高的光電轉(zhuǎn)換性能和光催化活性,經(jīng)7 h光照后,羅丹明B降解效率高達(dá)53.93%。另外,本文還討論了CdSe納米材料在AAO模板孔壁的生長(zhǎng)機(jī)理。
[Abstract]:CdSe nanotubes and nanowires were successfully prepared in anodic alumina (AAO) template by electrochemical deposition. The morphologies of CdSe nanotubes and nanowires were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectrometer (EDS). The structure and elemental composition were characterized. The photocatalytic activity of CdSe nanotubes and nanowires were studied by UV-Vis absorption spectra. The results showed that CdSe nanotubes and nanowires were successfully prepared by controlling the deposition quantity of electricity. Is a mixture of cubic and hexagonal crystals, After annealing at 350 鈩，

本文編號(hào)：1645945