本文選題：ZnO薄膜　切入點：光電性能　出處：《武漢理工大學》2010年碩士論文　論文類型：學位論文

【摘要】：ZnO是一種寬帶隙的半導體材料,禁帶寬度為3.37eV。透明導電ZnO薄膜是一種n型半導體,這是因為在薄膜的制備過程中,Zn和O的結合并不符合化學計量比,而是形成的一種缺氧的狀態(tài)。ZnO可以在很寬范圍內調節(jié)和控制,不同條件下生成的薄膜具有不同的功能。在ZnO薄膜中摻入鋁、銦、氟等雜質,能有效地提高薄膜的電導率,改善其性能。摻雜ZnO薄膜有很好的導電性和透光性,其中AZO薄膜已成為制備光電器件理想材料,是近年來研究熱點之一。 本文以乙酸鋅為前軀體,AlCl3、InCl3為摻雜劑,在玻璃基板上采用噴涂熱分解法制備摻雜ZnO透明導電薄膜。通過試驗確定摻雜元素、摻雜濃度、基板溫度、初始溶液中乙酸鋅濃度、噴槍與基板距離等因素對ZnO薄膜性能的影響,找到最佳的工藝參數。制備出滿足太陽能電池制程要求的ZnO基透明導電薄膜。在試驗中不斷改進Spray pyrolysis設備,得到滿足工業(yè)化生產ZnO基薄膜的生產設備。 用紫外-可見光譜(UV-Vis)測試了膜層的透射率和吸收率,計算了薄膜的光學常數：折射率,光學帶隙和膜層的厚度；用高倍顯微鏡觀察了薄膜的表面形貌；研究了噴涂工藝對薄膜表面形貌的影響；用四探針法測試了薄膜的方塊電阻；用XRD研究了薄膜的晶體結構。結果表明： (1)基板溫度是影響薄膜的結構和性能重要因素之一,利用噴涂熱分解法在550℃下,當In摻雜量為1%時,制備出薄膜達到了最小電阻率為3.5×10-3Ωm,在可見光區(qū)域(400-800 nm)的透射率都在80%左右,薄膜的光學帶隙為3.24eV的摻雜ZnO薄膜； (2)噴涂熱分解法制備出的ZnO薄膜樣品為六方釬鋅礦多晶結構,薄膜樣品沿(002)面上擇優(yōu)生長,隨著In摻雜量的增加薄膜晶體結構由六方晶系向斜六方晶系轉變。但是(002)衍射峰最強,最為尖銳。當In摻雜量大于1%時,薄膜出現新的結構InAlO3(ZnO)17結構出現； (3)噴涂熱分解法制備的In摻雜ZnO薄膜的最小電阻率為8.0×10-5Ωm比Al摻雜ZnO薄膜的最小電阻率3.5×10-3Ωm低出兩個數量級；而ZnO薄膜的透過率在微量摻雜時,不受摻雜元素的影響。因此在噴涂熱分解工藝中In元素比Al元素更適合作為摻雜,用于制備高性能ZnO薄膜。
[Abstract]:ZnO is a wide band gap semiconductor material with a band gap of 3.37 EV. The transparent conductive ZnO film is an n-type semiconductor because the combination of Zn and O does not conform to stoichiometric ratio. However, the anoxic state of ZnO can be adjusted and controlled in a wide range. The films formed under different conditions have different functions. Adding impurities such as aluminum, indium and fluorine into ZnO thin films can effectively improve the conductivity of the films. The doped ZnO thin films have good conductivity and transmittance, among which AZO thin films have become an ideal material for photovoltaic devices, and have become one of the research hotspots in recent years. In this paper, doped ZnO transparent conductive films were prepared on glass substrate with zinc acetate as precursor AlCl3 / InCl3 as dopant. Doping elements, doping concentration, substrate temperature and zinc acetate concentration in initial solution were determined by experiments. The influence of the distance between gun and substrate on the performance of ZnO thin film was obtained. The best process parameters were found. The transparent conductive film based on ZnO was prepared to meet the requirements of solar cell process. The Spray pyrolysis equipment was continuously improved in the experiment. The equipment for industrial production of ZnO-based films was obtained. The transmittance and absorptivity of the films were measured by UV-Vis. the optical constants such as refractive index, optical band gap and film thickness were calculated, and the surface morphology of the films was observed by high power microscope. The effect of spraying process on the surface morphology of the film was studied, the square resistance of the film was measured by four-probe method, and the crystal structure of the film was studied by XRD. The results show that:. The substrate temperature is one of the important factors affecting the structure and properties of the films. The spray thermal decomposition method is used at 550 鈩，

本文編號：1638837