本文選題：金屬有機(jī)化學(xué)氣相沉積　切入點(diǎn)：鋅錫氧薄膜　出處：《山東大學(xué)》2011年碩士論文　論文類(lèi)型：學(xué)位論文

【摘要】：在科學(xué)技術(shù)日新月異的今天,半導(dǎo)體材料的發(fā)展經(jīng)歷了第一代以鍺、硅為代表的元素半導(dǎo)體,第二代以砷化鎵、磷化銦為代表的化合物半導(dǎo)體,第三代半導(dǎo)體材料則以氮化鎵、碳化硅、氧化鋅等寬禁帶半導(dǎo)體為代表,它們一般具有更高的擊穿電場(chǎng)、熱導(dǎo)率、電子飽和速率和更高的抗輻射能力,因而更適合于制作高溫、高頻及大功率器件,其中的ZnO和SnO2等寬禁帶半導(dǎo)體氧化物材料都是重要的光電子信息材料,在透明導(dǎo)電氧化物方面有很多的應(yīng)用。透明導(dǎo)電氧化物(transparent conductive oxide簡(jiǎn)稱(chēng)TCO)薄膜主要包括In、Sb、Zn和Cd的氧化物及其復(fù)合多元氧化物薄膜材料。 在透明導(dǎo)電氧化物薄膜的不同應(yīng)用領(lǐng)域,對(duì)透明導(dǎo)電氧化物薄膜的性能提出了不同的要求。目前應(yīng)用較多的是單摻雜的薄膜,用途有些局限,性能比較單一。每一種透明導(dǎo)電氧化物材料都具有各自的特性,不可能滿(mǎn)足所有的應(yīng)用要求。為了開(kāi)發(fā)適合特殊用途的TCO薄膜,一些研究小組將各種TCO材料進(jìn)行組合,制備出一些具有新特點(diǎn)的TCO薄膜。一些二元TCO材料(如ZnO、SnO2等)可以按各種比例組合、采用多種方法制成TCO薄膜,其性能與化學(xué)組分密切相關(guān)。Zn-Sn-O薄膜可以同時(shí)具有ZnO和SnO2的優(yōu)點(diǎn),它的化學(xué)穩(wěn)定性與易刻蝕性及相關(guān)光電和結(jié)構(gòu)等性質(zhì)隨組分的改變而改變。在一定的條件和一定的比例下,Zn-Sn-0可以形成新的三元TCO材料錫酸鋅。錫酸鋅根據(jù)不同的Zn和Sn的比例,有兩種不同結(jié)構(gòu)的晶體,分別是屬于斜方六面體結(jié)構(gòu)的ZnSnO3和立方相尖晶石結(jié)構(gòu)的Zn2SnO4。 本論文的研究工作及結(jié)果如下： 1.MOCVD方法,以高純(C2H5)4Sn作為錫源,高純(C2H5)2Zn作為鋅源,高純02作為氧化劑,高純N2作為載氣,在藍(lán)寶石(0001)襯底上制備了一定生長(zhǎng)溫度下Sn與Zn不同比例(原子比)的Zn-Sn-O薄膜。隨后在錫鋅比1：1的條件下進(jìn)行了變溫實(shí)驗(yàn),溫度范圍為550-700℃。X射線(xiàn)衍射(XRD)測(cè)試結(jié)果顯示,在特定的溫度下,錫鋅比分別為1：5、1：10和1：20時(shí),只出現(xiàn)了ZnO(002)一個(gè)衍射峰,制備的薄膜為氧化鋅六方纖鋅礦結(jié)構(gòu)；當(dāng)錫鋅比為1:1時(shí),Zn-Sn-O薄膜呈現(xiàn)的是ZnSnO3(303)衍射峰,其晶體結(jié)構(gòu)屬三方晶系斜方六面體。分別對(duì)樣品進(jìn)行了掃描電子顯微鏡(SEM)、透過(guò)率和霍爾效應(yīng)等測(cè)試,詳細(xì)研究了薄膜的結(jié)構(gòu)形貌特征、光學(xué)性質(zhì)和電學(xué)性質(zhì)。2.特定溫度下,鋅錫比1：10時(shí)生成ZnO薄膜,鋅錫比1：1時(shí)生成ZnSnO3薄膜,分別對(duì)鋅錫比為1：10和1：1的樣品在空氣中進(jìn)行退火處理,退火溫度為650℃和800℃。ZnO薄膜隨退火溫度的升高薄膜的晶體質(zhì)量有所提高。ZnSnO3薄膜在退火溫度為650℃時(shí)開(kāi)始分解,退火溫度為800℃時(shí)完全分解成Zn2SnO4和SnO2,這與ZnSnO3的熱分解化學(xué)方程式是完全符合的,即2ZnSnO3(?)Zn2SnO4+SnO2
[Abstract]:Today, with the rapid development of science and technology, the development of semiconductor materials has experienced the first generation of element semiconductors represented by germanium and silicon, the second generation of compound semiconductors represented by gallium arsenide and indium phosphide, and the third generation semiconductor materials by gallium nitride. Silicon carbide, zinc oxide and other wide band gap semiconductors are generally more suitable for high temperature, high frequency and high power devices due to their higher breakdown electric field, thermal conductivity, electron saturation rate and higher radiation resistance. Both ZnO and SnO2 semiconductor oxide materials are important optoelectronic information materials. Transparent conductive oxide thin films mainly include the oxides of Zn and CD and their composite multicomponent oxide films. In different applications of transparent conductive oxide films, different requirements are put forward for the properties of transparent conductive oxide films. Each transparent conductive oxide material has its own characteristics and cannot meet all the application requirements. In order to develop TCO films suitable for special purposes, some research groups combine various TCO materials. Some TCO thin films with new characteristics have been prepared. Some binary TCO materials (such as ZnO- Sno _ 2, etc.) can be combined in various proportions to make TCO thin films. The properties of TCO thin films are closely related to the chemical composition. Zn-Sn-O thin films can have the advantages of both ZnO and SnO2. The chemical stability, etch resistance, related photoelectric and structural properties of Zn-Sn-0 change with the change of composition. A new ternary TCO material, zinc stannate, can be formed under certain conditions and a certain proportion of Zn-Sn-0. Zinc Stannate varies according to the ratio of Zn and Sn. There are two kinds of crystals with different structures: ZnSnO3 with oblique hexahedron and Zn _ 2SnO _ 4 with cubic spinel structure. The research work and results of this thesis are as follows:. 1. Using high purity C _ 2H _ 5H _ 4Sn as tin source, high purity C _ 2H _ 5H _ 2Zn as zinc source, high purity 02 as oxidant and high purity N _ 2 as carrier gas by MOCVD. Zn-Sn-O thin films with different ratio of Sn to Zn (atomic ratio) were prepared on sapphire sapphire (0001) substrates at a certain growth temperature. The temperature variation experiments were carried out at the ratio of Sn to Zn at 1: 1. The temperature range was 550-700 鈩，

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