本文關(guān)鍵詞： YBCO薄膜 金屬有機物化學(xué)氣相沉積 涂層導(dǎo)體 結(jié)構(gòu)與性能　出處：《電子科技大學(xué)》2010年碩士論文　論文類型：學(xué)位論文

【摘要】： YBa2Cu3O7-δ高溫超導(dǎo)材料在超導(dǎo)發(fā)電機、電動機、強場磁體、限流器、儲能系統(tǒng)等方面有著廣泛的應(yīng)用前景。但是直接在柔性的金屬Ni基帶上制備YBCO涂層導(dǎo)體難度很大,主要是薄膜的快速制備、晶格失配以及離子擴散等問題都有待研究并解決。 本論文基于金屬有機物化學(xué)氣相沉積法(MOCVD)在LaAlO3單晶以及雙軸織構(gòu)的鎳鎢合金(Ni-5%W/Y2O3/YSZ/CeO2)基帶上生長YBCO超導(dǎo)薄膜。自行設(shè)計和搭建了MOCVD實驗系統(tǒng)。通過實驗,對在單晶基底上制備YBCO薄膜的生長工藝、結(jié)構(gòu)做了系統(tǒng)的研究,并在此基礎(chǔ)之上對在金屬基底上制備YBCO涂層導(dǎo)體做了初步的探索性研究,為后期超導(dǎo)帶材的快速制備打下了基礎(chǔ)。主要內(nèi)容如下: 1.設(shè)計并搭建了實驗用的MOCVD系統(tǒng),并通過實驗對系統(tǒng)進行了改進。 (1)設(shè)計了一套適合液相金屬有機源進液并進行閃蒸的系統(tǒng),通過使用開有微孔的毛細管,將氣體與金屬有機源液體混合,保證了連續(xù)穩(wěn)定的金屬有機源輸運,實現(xiàn)了實驗的穩(wěn)定性,為后期工業(yè)化生產(chǎn)研究打下基礎(chǔ)。 (2)對不同反應(yīng)室噴口設(shè)計的系統(tǒng)進行對比實驗。通過改進系統(tǒng)氣流控制系統(tǒng),使得基底上方的氣流速度減慢并容易得到控制。在LAO的單晶基底上制備出了完全c軸取向的YBCO外延薄膜。其薄膜表面均勻,致密,晶粒之間連續(xù)性好,測得臨界電流密度Jc為0.2MA/cm2。 2.在LaAlO3單晶基底上生長YBCO外延薄膜,研究了工藝參數(shù)(溫度、總壓強、氧分壓)對YBCO薄膜的結(jié)構(gòu)、表面形貌以及成分比例的影響,并優(yōu)化了生長工藝。獲得了完全c軸取向YBCO薄膜,面外半高寬為0.4°,薄膜表面晶粒連續(xù)、均勻,其臨界電流密度達到了0.6 MA/cm2。 3.在多層過渡層結(jié)構(gòu)的Ni-5%W/Y2O3/YSZ/CeO2基底上研究制備YBCO涂層導(dǎo)體。研究了過渡層中CeO2層的面外取向?qū)BCO薄膜結(jié)構(gòu)的影響,發(fā)現(xiàn)面外半高寬越小,獲得的YBCO涂層導(dǎo)體結(jié)構(gòu)越?好。在CeO2層半高寬為5.5°時獲得(005)峰半高寬僅為3.5°的YBCO外延膜。研究了溫度對YBCO涂層導(dǎo)體結(jié)構(gòu)的影響,在865℃獲得了完全c軸取向,且面外半高寬為3.0°的高質(zhì)量薄膜。
[Abstract]:Delta motor YBa2Cu3O7- high temperature superconducting materials in the superconducting generator, high field magnets, limiter, energy storage system has a wide application prospect and so on. But directly on the metal flexible Ni baseband prepared on YBCO coated conductor is very difficult, mainly the rapid thin films preparation, crystal lattice mismatch and ion diffusion are to be studied and solved.
In this paper, metal organic chemical vapor deposition (MOCVD) method based on LaAlO3 single crystal and biaxial texture of the nickel tungsten alloy (Ni-5%W/Y2O3/YSZ/CeO2) YBCO superconducting thin film growth on the baseband is designed and built. The MOCVD experimental system. Through the experiment, the growth process of YBCO thin films on single crystal substrate, the structure of the system on the basis of the research and preparation of YBCO coated conductor on a metal substrate to do preliminary study, fast business late tapes prepared to lay the foundation. The main contents are as follows:
1. the experimental MOCVD system was designed and built, and the system was improved by the experiment.
(1) design a system for liquid metal organic liquid and flash, by using a capillary pore, the gas and the metal organic liquid mixture, to ensure continuous and stable metal organic source transport, to achieve the stability of the experiment, to lay the foundation for the study of the late industrialization production.
(2) the experiments of different reaction chamber nozzle design system. By improving the system of air flow control system, makes the above basal airflow velocity slowed down and easy to be controlled. We prepared the YBCO epitaxial film completely c axis orientation in single crystal substrate LAO. The film surface is uniform, dense, continuous grain well, the measured critical current density of Jc 0.2MA/cm2.
2. in the LaAlO3 single crystal substrate of YBCO epitaxial growth thin film, the effects of process parameters (temperature, total pressure, oxygen partial pressure) on YBCO thin film structure, surface topography and composition proportion, and optimization of the growth process. Was a complete c axis oriented YBCO films, out of plane FWHM is 0.4 degrees, the surface grain film, uniform, the critical current density reached 0.6 MA/cm2.
3. in the preparation of YBCO coated conductor multilayer transition of Ni-5%W/Y2O3/YSZ/CeO2 base layer structure. Effects of plane orientation CeO2 transition layer in the structure of YBCO thin films, found out of plane half width smaller, YBCO coated conductor structure more? Good. At CeO2 layer half width is 5.5 degrees when (005) FWHM is only YBCO epitaxial film of 3.5 degrees. Effect of temperature on YBCO coated conductor structure has been studied and obtained a complete c axis oriented at 865 DEG C, and out of plane FWHM for high quality thin films of 3 degrees.

【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2010
【分類號】：TM26

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本文編號：1465038