本文關(guān)鍵詞：磁控濺射法制備的Al-Mg-B薄膜的研究　出處：《大連理工大學(xué)》2011年碩士論文　論文類型：學(xué)位論文

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【摘要】：鋁鎂硼(AlMgB14)作為一種新型超硬納米材料,以其優(yōu)異的機(jī)械、熱學(xué)和電學(xué)性能有著廣泛的應(yīng)用前景。鋁鎂硼(Al-Mg-B)薄膜的元素成分、表面形貌、內(nèi)部結(jié)構(gòu)等對(duì)其機(jī)械、熱學(xué)和電學(xué)性能的影響十分明顯。因此研究沉積參數(shù)和摻雜對(duì)Al-Mg-B薄膜的內(nèi)部結(jié)構(gòu)和表面特性的影響有重要的意義。 本文采用磁控濺射的方法制備了Al-Mg-B薄膜。研究了基片溫度、硼濺射功率、靶材組成、偏壓及其摻雜對(duì)Al-Mg-B薄膜的元素含量、成鍵性質(zhì)、表面形貌及其力學(xué)性能的影響。采用電子探針顯微分析(EPMA)、原子力顯微鏡(AFM)、X射線衍射(XRD)、傅立葉紅外光譜(FTIR)、納米壓痕等對(duì)薄膜進(jìn)行了表征。工作主要內(nèi)容如下： (1)在不同的沉積溫度和硼濺射功率下,采用磁控濺射法成功制備了Al-Mg-B薄膜。結(jié)果表明,由于受到基片溫度和硼濺射功率的影響,Al-Mg-B薄膜的硬度隨著B含量的升高而增加。Al-Mg-B薄膜的最大硬度約為31 GPa,其硼含量為65 at.%。Al-Mg-B薄膜的表面很光滑。隨著基片溫度和硼濺射功率的增加,薄膜的表面粗糙度變小。最好的表面粗糙度達(dá)到約0.5 nm,摩擦系數(shù)可達(dá)到0.05,同時(shí)這個(gè)薄膜的硬度也最高。在沉積Al-Mg-B薄膜過程中,沉積溫度和硼濺射功率扮演重要的角色,因?yàn)樗鼈兇蟠笥绊懥吮∧ぶ信鸬暮俊?(2)采用磁控濺射方法,改變AlMg復(fù)合靶的比率,成功制備出Al-Mg-B薄膜。結(jié)果表明,非晶薄膜的成分接近于AlMgB14晶體的原子含量,表面非常平滑。通過改變AlMg復(fù)合靶的比率在一定程度上對(duì)Al-Mg-B薄膜的性能有所改善：當(dāng)AlMg復(fù)合靶的Al:Mg比值接近于1時(shí),制備的薄膜具有更高的硬度,表面更平滑,摩擦系數(shù)最低。因此AlMg復(fù)合靶對(duì)制備不同性能的Al-Mg-B薄膜有重要影響。 (3)在不同的偏壓下,利用高真空的磁控濺射設(shè)備在Si(100)上制備Al-Mg-B薄膜。結(jié)果表明,在600℃下沉積的薄膜成分是均勻的,并且改變偏壓對(duì)薄膜化學(xué)組成基本沒有影響；適當(dāng)?shù)仄珘河兄贏l-Mg-B薄膜中B12二十面體的形成,從而導(dǎo)致薄膜的硬度的升高,最高可達(dá)到30.7 GPa。 (4)分別以鉻、鈦、氮為摻雜物,通過磁控濺射法采用兩靶共濺射制備了摻雜Al-Mg-B薄膜。結(jié)果表明,Cr、Ti和N都分別充分地進(jìn)入薄膜中；Al-Mg-B薄膜中摻入Cr元素對(duì)薄膜的B12的生長(zhǎng)有一定的抑制作用,從而降低了薄膜的硬度；摻入N的薄膜中化學(xué)鍵態(tài)主要是sp2型B-N鍵,從而導(dǎo)致?lián)絅的薄膜硬度僅僅為2 GPa；摻入Ti的薄膜的硬度只有9 GPa,可能主要是由B-O鍵導(dǎo)致的。總之,摻雜的Al-Mg-B薄膜的性能存在明顯的差異,為其后續(xù)的研究打下良好基礎(chǔ)。
[Abstract]:AlMgB14), as a new superhard nano-material, has a wide application prospect for its excellent mechanical, thermal and electrical properties. Surface morphology, internal structure, etc. The influence of deposition parameters and doping on the internal structure and surface properties of Al-Mg-B thin films is very obvious, so it is of great significance to study the influence of deposition parameters and doping on the internal structure and surface properties of Al-Mg-B films. In this paper, Al-Mg-B thin films were prepared by magnetron sputtering. The substrate temperature, boron sputtering power, target composition, bias voltage and its doping on the element content of Al-Mg-B thin films were studied. The effects of bonding properties, surface morphology and mechanical properties were investigated by electron probe microanalysis (EPMA) and atomic force microscopy (AFM) X-ray diffraction (XRD). The films were characterized by Fourier transform infrared spectroscopy (FTIR) and nano-indentation. 1) Al-Mg-B thin films were successfully prepared by magnetron sputtering at different deposition temperatures and boron sputtering power. The results show that the films are affected by substrate temperature and boron sputtering power. The hardness of Al-Mg-B films increases with the increase of B content. The maximum hardness of Al-Mg-B films is about 31 GPa. The surface of the film with boron content of 65 at.%.Al-Mg-B is very smooth, with the increase of substrate temperature and boron sputtering power. The surface roughness of the film becomes smaller. The best surface roughness is about 0.5 nm, the friction coefficient is up to 0.05, and the hardness of the film is also the highest. Deposition temperature and boron sputtering power play an important role because they greatly affect the content of boron in the film. (2) Al-Mg-B thin films were successfully prepared by magnetron sputtering method and the ratio of AlMg composite targets was changed. The composition of amorphous film is close to the atomic content of AlMgB14 crystal. The surface is very smooth. The performance of Al-Mg-B films is improved to some extent by changing the ratio of AlMg composite target: when the Al:Mg ratio of AlMg composite target is close to 1:00. The prepared films have higher hardness, smoother surface and the lowest friction coefficient. Therefore, the AlMg composite target has an important effect on the preparation of Al-Mg-B thin films with different properties. Al-Mg-B thin films were prepared on Si-100 with high vacuum magnetron sputtering equipment at different bias voltages. The results show that the composition of the films deposited at 600 鈩，

本文編號(hào)：1440884