【摘要】：諧振式壓力傳感器是一種典型的利用外界壓力作用時(shí)結(jié)構(gòu)頻率的改變來實(shí)現(xiàn)壓力測(cè)量的MEMS器件。該類傳感器一般使用單晶硅制作感受外界壓力的壓力膜以及間接敏感元件諧振梁,實(shí)現(xiàn)了二次敏感模式,它可以直接輸出頻率信號(hào),其傳輸與測(cè)量都可直接應(yīng)用數(shù)字技術(shù),具有廣闊的應(yīng)用前景。本文諧振器采用靜電驅(qū)動(dòng)/電容檢測(cè)原理,當(dāng)封裝層施加電壓U后,封裝層與諧振梁之間產(chǎn)生電容,進(jìn)而產(chǎn)生作用于諧振梁的靜電力。在諧振器的設(shè)計(jì)過程,電容一般采用理想電容公式,而忽略了邊緣效應(yīng)產(chǎn)生的影響,從而使得設(shè)計(jì)結(jié)果與實(shí)際應(yīng)用存在誤差。本文除了考慮邊緣效應(yīng)對(duì)諧振器電容的影響外,還考慮了邊緣效應(yīng)對(duì)機(jī)電耦合時(shí)諧振梁變形、臨界電壓、靜電剛度的影響;同時(shí)對(duì)諧振器進(jìn)行建模,分析系統(tǒng)參數(shù)以及電壓、邊緣效應(yīng)對(duì)系統(tǒng)頻率、靈敏度等系統(tǒng)性能的影響,具體內(nèi)容如下:(1)對(duì)現(xiàn)有的電容邊緣效應(yīng)理論計(jì)算公式進(jìn)行分析,在考慮長(zhǎng)度與厚度對(duì)邊緣效應(yīng)影響下,選取誤差較小的計(jì)算公式;同時(shí)對(duì)本文中封裝層遠(yuǎn)大于諧振梁的極板之間的電容公式進(jìn)行了推導(dǎo),應(yīng)用現(xiàn)有平板電容公式計(jì)算本文模型有較大的誤差,而本文推導(dǎo)的電容計(jì)算公式誤差較小;同時(shí)對(duì)封裝層尺寸對(duì)電容的影響進(jìn)行了仿真分析,當(dāng)封裝層尺寸遠(yuǎn)遠(yuǎn)大于諧振梁尺寸時(shí),在一定范圍內(nèi),封裝層的尺寸變化基本不會(huì)改變電容值。(2)當(dāng)靜電力作用于諧振梁時(shí),諧振梁會(huì)產(chǎn)生變形,當(dāng)靜電力大于諧振梁回復(fù)力時(shí),諧振梁會(huì)吸附到封裝層;利用數(shù)值與有限元分析的方式,對(duì)諧振梁的翹曲變形與臨界電壓進(jìn)行求解;當(dāng)諧振梁存在靜電力時(shí)會(huì)引入靜電剛度,當(dāng)電壓較小時(shí),忽略諧振梁變形的影響,求解諧振梁的靜電剛度;同時(shí)考慮了邊緣效應(yīng)對(duì)諧振梁變形、臨界電壓、靜電剛度的影響。(3)建立諧振梁自由振動(dòng)模型,求解諧振梁振型與頻率以及諧振梁的等效質(zhì)量;當(dāng)諧振梁引入靜電剛度,諧振梁等效剛度軟化,諧振頻率相對(duì)減小,通過求解靜電剛度以及機(jī)械剛度的比值,從而進(jìn)一步求解機(jī)電耦合下諧振頻率,分析電壓以及邊緣效應(yīng)對(duì)諧振頻率的影響;建立諧振器模型,分析諧振梁、壓力膜、錨點(diǎn)、電壓等系統(tǒng)參數(shù)以及邊緣效應(yīng)對(duì)諧振頻率以及靈敏度的影響。
[Abstract]:Resonant pressure sensor is a typical MEMS device which makes use of the change of structure frequency under the action of external pressure to realize pressure measurement. This kind of sensor usually makes pressure film and indirect sensitive element resonance beam to feel external pressure, and realizes the secondary sensitive mode. It can output frequency signal directly, and its transmission and measurement can be directly applied to digital technology. It has a broad application prospect. In this paper, the principle of electrostatic drive / capacitance detection is adopted in the resonator. When the voltage U is applied to the package layer, the capacitance between the package layer and the resonance beam is produced, and then the electrostatic force acting on the resonance beam is generated. In the design process of resonator, the ideal capacitance formula is generally adopted, and the influence of edge effect is ignored, which makes the design results error with the practical application. In this paper, not only the influence of edge effect on the capacitance of resonator is considered, but also the influence of edge effect on the deformation, critical voltage and electrostatic stiffness of resonant beam in electromechanical coupling is also considered. At the same time, the resonator is modeled, and the effects of system parameters, voltage and edge effect on the frequency and sensitivity of the system are analyzed. The specific contents are as follows: (1) the existing theoretical formula of capacitance edge effect is analyzed. Considering the influence of length and thickness on the edge effect, the formula with small error is selected. At the same time, the capacitance formula between the plates whose packaging layer is much larger than that of the resonant beam is deduced. The calculation error of the model is large by using the existing plate capacitance formula, but the error of the capacitance calculation formula derived in this paper is small. At the same time, the influence of the size of the packaging layer on the capacitance is simulated and analyzed. When the size of the packaging layer is much larger than the size of the resonant beam, in a certain range, The size change of the package layer basically does not change the capacitance value. (2) when the electrostatic force acts on the resonant beam, the resonant beam will deform, and when the electrostatic force is greater than the recovery force of the resonant beam, the resonant beam will be adsorbed to the package layer; The warping deformation and critical voltage of resonant beam are solved by numerical and finite element analysis. When there is electrostatic force in the resonant beam, the electrostatic stiffness will be introduced. when the voltage is small, the influence of the deformation of the resonant beam will be ignored, and the electrostatic stiffness of the resonant beam will be solved. At the same time, the influence of edge effect on the deformation, critical voltage and electrostatic stiffness of resonant beam is considered. (3) the free vibration model of resonant beam is established, and the vibration mode and frequency of resonant beam and the equivalent mass of resonant beam are solved. When the electrostatic stiffness is introduced into the resonant beam, the equivalent stiffness of the resonant beam is softened and the resonant frequency is relatively reduced. by solving the ratio of electrostatic stiffness and mechanical stiffness, the resonant frequency under electromechanical coupling is further solved. The influence of voltage and edge effect on resonance frequency is analyzed. The resonator model is established, and the effects of system parameters such as resonance beam, pressure film, anchor point, voltage and edge effect on resonance frequency and sensitivity are analyzed.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TP212

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