【摘要】：MEMS(微機(jī)電系統(tǒng))硅諧振式壓力傳感器利用檢測(cè)其諧振頻率的改變間接測(cè)量外界環(huán)境壓力,擁有體積小,精度高,抗干擾能力強(qiáng)等優(yōu)點(diǎn)。另外其輸出的頻率信號(hào)是準(zhǔn)數(shù)字信號(hào),易于和后端數(shù)字電路相接。因此,MEMS諧振式壓力傳感器在精密控制和航空航天等需要高精度測(cè)量壓力的領(lǐng)域有著重要作用。本文提出一種基于靜電激勵(lì)/電容檢測(cè)的硅諧振式壓力傳感器,采用諧振梁和感壓薄膜的復(fù)合結(jié)構(gòu)作為傳感器的敏感結(jié)構(gòu),對(duì)該敏感結(jié)構(gòu)進(jìn)行理論分析和建模,通過仿真計(jì)算,得到了敏感結(jié)構(gòu)在一個(gè)大氣壓下的位移分布和應(yīng)力分布,諧振頻率隨壓力變化的關(guān)系曲線,以及諧振梁最大位移與激勵(lì)電壓的關(guān)系曲線。分析比較仿真結(jié)果,選擇長(zhǎng)方形膜作為感壓薄膜,確定了諧振梁與感壓薄膜的相對(duì)位置,得到敏感結(jié)構(gòu)最優(yōu)尺寸和激勵(lì)電壓的極限值,該敏感結(jié)構(gòu)諧振頻率約為19 kHz,靈敏度為149.37 Hz/kpa,激勵(lì)電壓最大不超過42.5 V。在此敏感結(jié)構(gòu)基礎(chǔ)上建立了傳感器的三層硅結(jié)構(gòu)模型,并進(jìn)行工藝設(shè)計(jì):采用電阻率為0.005 Ω*cm的高摻雜硅片來制作該傳感器;用氮化硅來作為掩膜,濕法腐蝕和干法腐蝕相結(jié)合來制作敏感結(jié)構(gòu);硅片之間通過金硅共晶鍵合進(jìn)行封裝;通過濕法腐蝕實(shí)驗(yàn)得到凸角腐蝕數(shù)據(jù),完成了掩膜版的版圖繪制。
[Abstract]:MEMS (Micro-Electromechanical system) silicon resonant pressure sensor uses the change of its resonant frequency to measure the external environmental pressure indirectly, which has the advantages of small volume, high precision and strong anti-interference ability. In addition, the output frequency signal is quasi-digital signal, easy to connect with the back-end digital circuit. Therefore, MEMS resonant pressure sensor plays an important role in precision control, aerospace and other fields requiring high precision pressure measurement. In this paper, a kind of silicon resonant pressure sensor based on electrostatic excitation / capacitance detection is proposed. The compound structure of resonant beam and pressure film is used as the sensitive structure of the sensor. The theoretical analysis and modeling of the sensitive structure are carried out, and the simulation calculation is carried out. The displacement distribution and stress distribution of the sensitive structure under one atmospheric pressure, the relation curve of resonant frequency with pressure, and the relation curve between the maximum displacement of resonant beam and the excitation voltage are obtained. By analyzing and comparing the simulation results, the rectangular film is selected as the pressure sensitive film, the relative position of the resonant beam and the pressure film is determined, and the optimal size and the limit value of the excitation voltage of the sensitive structure are obtained. The resonant frequency of the sensitive structure is about 19 kHz,. The sensitivity is 149.37 Hz/kpa, and the maximum excitation voltage is no more than 42.5 V. On the basis of this sensitive structure, the three-layer silicon structure model of the sensor is established, and the process design is carried out: the sensor is fabricated by using a highly doped silicon wafer with resistivity of 0.005 惟 * cm; Silicon nitride is used as mask, wet etching and dry etching are combined to make sensitive structure, silicon wafers are encapsulated by au Si eutectic bonding, and convex corner corrosion data are obtained by wet etching experiment, and the layout of mask plate is drawn.
【學(xué)位授予單位】：合肥工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TP212

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