本文選題：微光夜視技術(shù) + 電子轟擊有源像素傳感器��； 參考：《長(zhǎng)春理工大學(xué)》2017年碩士論文

【摘要】：由于電子轟擊有源像素傳感器(EBAPS)具有高探測(cè)靈敏度、高機(jī)電一體化、低功耗、體積小和低成本CMOS加工工藝等優(yōu)點(diǎn),因此得到了國(guó)內(nèi)外微光成像領(lǐng)域的特別關(guān)注�；贓BAPS的性能受其電子倍增層結(jié)構(gòu)參數(shù)的影響,本文針對(duì)電子倍增層結(jié)構(gòu)與電荷收集效率的關(guān)系進(jìn)行了理論模擬研究。首先,依據(jù)低能電子與固體相互作用模型結(jié)合Monte Carlo方法,模擬分析了電子入射到樣品中的電子散射特性;其次,模擬分析了電子入射到EBAPS倍增區(qū)域內(nèi)倍增電子的分布情況,建立倍增區(qū)域內(nèi)倍增電子的分布模型,得到倍增電子的軌跡分布。最后,建立了基底均勻摻雜和梯度摻雜情況下電子轟擊有源像素傳感器(EBAPS)的電荷收集效率(CCE)的計(jì)算模型,依據(jù)半導(dǎo)體基礎(chǔ)理論分別研究了基底均勻摻雜情況下,不同摻雜濃度、膜厚以及入射電子能量對(duì)電荷收集效率的影響,電荷收集效率理論模擬結(jié)果與已報(bào)道的(4KeV,均勻摻雜)實(shí)測(cè)的結(jié)果較為符合;同時(shí)研究了梯度摻雜情況下,不同摻雜模型的電荷收集效率,最終得到較高的電荷收集效率為92%。本文模擬研究結(jié)果可以為高增益的EBAPS的制備提供理論依據(jù)。
[Abstract]:Due to the advantages of electronic bombardment active pixel sensor (EBAPS), such as high detection sensitivity, high electromechanical integration, low power consumption, small size and low cost, etc., it has attracted special attention in the field of low light level imaging at home and abroad. Based on the fact that the performance of EBAPS is affected by the structure parameters of the electron multiplication layer, the relationship between the structure of the electron multiplication layer and the charge collection efficiency is studied theoretically in this paper. Firstly, based on the model of the interaction between low energy electrons and solids and the Monte Carlo method, the scattering characteristics of electrons incident into the samples are simulated and analyzed. Secondly, the distribution of the electrons in the region of EBAPS multiplication is simulated and analyzed. The distribution model of the multiplying electrons in the multiplying region is established, and the trajectory distribution of the multiplicative electrons is obtained. Finally, the model of charge collection efficiency (CCEE) for EBAPS (active Pixel Sensor) is established under the condition of uniform substrate doping and gradient doping. According to the basic theory of semiconductors, the different doping concentrations are studied respectively under the condition of uniform substrate doping. The effect of film thickness and incident electron energy on charge collection efficiency is in good agreement with the reported results of uniform doping and the theoretical simulation results of charge collection efficiency are also studied in the case of gradient doping. The charge collection efficiency of different doping models is 92. The simulation results can provide theoretical basis for the preparation of high gain EBAPS.
【學(xué)位授予單位】：長(zhǎng)春理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TP212

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本文編號(hào)：1860502