【摘要】：飛行時(shí)間二次離子質(zhì)譜儀(Time of fly-secondary ion mass spectrometry,簡(jiǎn)稱TOF-SIMS)利用高能一次離子束轟擊物質(zhì)表面產(chǎn)生二次離子,根據(jù)不同核質(zhì)比的二次離子在質(zhì)量分析器中飛行時(shí)間不同而得知樣品表面元素的質(zhì)譜圖,實(shí)現(xiàn)對(duì)被檢樣品分析。TOF-SIMS以其高分辨率、高靈敏度的特性而廣泛應(yīng)用于地質(zhì)學(xué)研究、生物樣品分析以及食品化學(xué)等領(lǐng)域。直流高壓電源是TOFSIMS的重要組成部分,通過(guò)在提取電極和透鏡電極上施加不同的高壓實(shí)現(xiàn)對(duì)二次離子的提取和聚焦,其中提取電極和透鏡電極施加的電壓對(duì)二次離子運(yùn)動(dòng)情況和儀器性能影響很大,研制適用于該儀器的高壓電源具有重要意義。本論文立足于“國(guó)家重大科學(xué)儀器設(shè)備開(kāi)發(fā)專項(xiàng)-同位素地質(zhì)年代學(xué)專用TOF-SIMS科學(xué)裝置”項(xiàng)目,旨在為T(mén)OF-SIMS儀器設(shè)計(jì)一款直流高壓電源,并基于現(xiàn)行的高壓電源研制技術(shù),從主電路拓?fù)浣Y(jié)構(gòu)的選取、單元電路的設(shè)計(jì)、電源的仿真與參數(shù)優(yōu)化等多個(gè)方面對(duì)高壓電源進(jìn)行設(shè)計(jì)。根據(jù)TOF-SIMS對(duì)直流高壓電源的要求,首先提出高壓電源的總體技術(shù)方案為高頻升壓變壓器與倍壓電路相結(jié)合。其次,對(duì)比不同種類的電源主電路拓?fù)浣Y(jié)構(gòu),并根據(jù)高壓電源的設(shè)計(jì)要求及適用條件等因素,確定高壓電源的主電路拓?fù)浣Y(jié)構(gòu),即斬波調(diào)壓與全橋逆變的拓?fù)浣Y(jié)構(gòu)。同時(shí),根據(jù)模塊化電路的設(shè)計(jì)思想,對(duì)包括整流濾波電路、斬波調(diào)壓電路、逆變電路、控制電路、倍壓電路等單元電路進(jìn)行了詳細(xì)設(shè)計(jì),并重點(diǎn)闡述斬波電路中關(guān)鍵器件功率電感的參數(shù)設(shè)計(jì),以及通過(guò)面積積法對(duì)高頻高壓變壓器的設(shè)計(jì)與制作進(jìn)行了深入研究。再次,基于Multisim軟件,對(duì)主電路中主要功能電路進(jìn)行仿真分析,并深入探討斬波電路及倍壓電路中不同參數(shù)對(duì)輸出紋波的影響,探討其形成原因,并給出減小紋波的解決方案,驗(yàn)證本設(shè)計(jì)方案的可行性。最后,根據(jù)抗電磁干擾的PCB設(shè)計(jì)原則繪制電源線路板,對(duì)焊接制作完成的直流高壓電源進(jìn)行單元電路測(cè)試與整體性能測(cè)試,包括阻性負(fù)載測(cè)試、紋波測(cè)試、時(shí)漂測(cè)試與溫度測(cè)試,以及TOF-SIMS應(yīng)用測(cè)試并對(duì)測(cè)試結(jié)果進(jìn)行了分析。
[Abstract]:The time-of-flight secondary ion mass spectrometer (Time of fly-secondary ion mass spectrometry, (TOF-SIMS) produces secondary ions by bombarding the surface of the material with high energy primary ion beam. According to the different flight time of the secondary ions with different nuclear-mass ratio in the mass analyzer, the mass spectrum of the elements on the surface of the sample is obtained, and the analysis of the tested sample is realized. TOF-SIMS with its high resolution, High sensitivity is widely used in geological research, biological sample analysis and food chemistry. DC high voltage power supply is an important part of TOFSIMS. The secondary ion is extracted and focused by applying different high voltage to the extraction electrode and lens electrode. The voltage applied by the extraction electrode and lens electrode has a great influence on the movement of secondary ions and the performance of the instrument. It is of great significance to develop a high voltage power supply suitable for the instrument. This paper is based on the project of "National Major Scientific instrument and equipment Development Project-Isotope Geological Geochronology Special TOF-SIMS Scientific device". The purpose of this paper is to design a DC high voltage power supply for TOF-SIMS instrument, and based on the current high voltage power supply development technology. The design of high voltage power supply is carried out from many aspects, such as the selection of main circuit topology, the design of unit circuit, the simulation of power supply and the optimization of parameters. According to the requirements of TOF-SIMS for DC high voltage power supply, the overall technical scheme of high voltage power supply is put forward, which is the combination of high frequency boost transformer and double voltage circuit. Secondly, the main circuit topology of different kinds of power supply is compared, and according to the design requirements and applicable conditions of high voltage power supply, the main circuit topology of high voltage power supply is determined, that is, chopping voltage regulation and full bridge inverter topology. At the same time, according to the design idea of modular circuit, the unit circuits, including rectifier and filter circuit, chopper voltage regulating circuit, inverter circuit, control circuit, voltage doubling circuit and so on, are designed in detail. The parameter design of power inductance of key devices in chopping circuit is emphasized, and the design and manufacture of high frequency and high voltage transformer are deeply studied by area product method. Thirdly, based on Multisim software, the main functional circuits in the main circuit are simulated and analyzed, and the influence of different parameters in chopping circuit and voltage doubling circuit on the output ripples is deeply discussed, the causes of its formation are discussed, and the solutions to reduce the ripples are given. Verify the feasibility of the design. Finally, according to the PCB design principle of anti-electromagnetic interference, the power supply circuit board is drawn, and the unit circuit test and the overall performance test of the DC high voltage power supply made by welding are carried out, including resistive load test and wave test. Time drift test and temperature test, as well as TOF-SIMS application test, and the test results are analyzed.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TH843

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 黃榮根;;可調(diào)小功率直流高壓電源[J];家電檢修技術(shù);2006年01期

2 黃曉波;;對(duì)直流高壓試驗(yàn)中電壓極性的研究[J];科技風(fēng);2013年07期

3 陳炯;凌紅星;姚冰峰;;恒流恒壓直流高壓電源系統(tǒng)的研制[J];上海電力學(xué)院學(xué)報(bào);2013年05期

4 王榮毅;孫東明;張欣榮;;密封式60千伏直流高壓試驗(yàn)器的研制[J];電力技術(shù);1982年09期

5 宋永林;;擴(kuò)大直流高壓測(cè)量的范圍[J];國(guó)外計(jì)量;1975年05期

6 肖蔭成,孫大坤,王津津,李漢民,徐蕾;100kV直流高壓標(biāo)準(zhǔn)電壓源[J];高電壓技術(shù);1995年02期

7 孫雷;;關(guān)于金屬氧化物避雷器直流高壓試驗(yàn)的探討[J];黑龍江科技信息;2013年32期

8 楊慶余;;醫(yī)用X線機(jī)一種罕見(jiàn)的故障及其原因分析[J];中國(guó)醫(yī)療器械雜志;1990年01期

9 肖如泉;王琰;曾嶸;程天強(qiáng);李軍;李偉光;倪梅娟;;６０ｋＶ開(kāi)關(guān)型直流高壓電源[J];實(shí)驗(yàn)技術(shù)與管理;1999年03期

10 李東倉(cāng);楊磊;王鵬;楊映輝;李偉棟;張福甲;;直流高壓穩(wěn)壓電源溫度穩(wěn)定性研究[J];蘭州大學(xué)學(xué)報(bào);2006年03期

相關(guān)會(huì)議論文 前5條

1 李憲優(yōu);于麗娟;王玲;魏學(xué)榮;;精密直流高壓分壓箱的研制[A];第九屆全國(guó)信息獲取與處理學(xué)術(shù)會(huì)議論文集Ⅱ[C];2011年

2 陳化鋼;;對(duì)直流高壓試驗(yàn)電壓極性的分析[A];面向21世紀(jì)的科技進(jìn)步與社會(huì)經(jīng)濟(jì)發(fā)展（下冊(cè)）[C];1999年

3 劉杰;趙永林;王旭光;;一種光纖隔離型直流高壓測(cè)量裝置[A];第二屆全國(guó)信息獲取與處理學(xué)術(shù)會(huì)議論文集[C];2004年

4 冉秀娟;劉英;;直流高壓程序控制器設(shè)計(jì)[A];第二屆全國(guó)信息與電子工程學(xué)術(shù)交流會(huì)暨第十三屆四川省電子學(xué)會(huì)曙光分會(huì)學(xué)術(shù)年會(huì)論文集[C];2006年

5 張之平;;新一代電除塵用直流高壓電源智能控制器[A];第十二屆中國(guó)電除塵學(xué)術(shù)會(huì)議論文集[C];2007年

相關(guān)重要報(bào)紙文章 前3條

1 廣州 戴鳳梅;晶體管直流高壓電源[N];電子報(bào);2009年

2 廣東 梁肇全;一種晶體管直流高壓電源[N];電子報(bào);2006年

3 廣東省潮州市華田電器 供稿;800W數(shù)字式逆變電源板[N];電子報(bào);2004年

相關(guān)博士學(xué)位論文 前1條

1 吳岱;NEA-GaAs光陰極直流高壓注入器物理特性與實(shí)驗(yàn)研究[D];清華大學(xué);2014年

相關(guān)碩士學(xué)位論文 前3條

1 王婭男;TOF-SIMS 5kV直流高壓電源設(shè)計(jì)[D];吉林大學(xué);2016年

2 洪悅;30kV可調(diào)直流高壓電源設(shè)計(jì)[D];大連理工大學(xué);2011年

3 李霞;基于單片機(jī)的寬范圍連續(xù)可調(diào)直流高壓穩(wěn)壓電源[D];大連理工大學(xué);2002年

，

本文編號(hào)：2482449