本文選題：多通道濾光片　切入點(diǎn)：厚膠光刻　出處：《浙江大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

【摘要】：在現(xiàn)代光學(xué)信息技術(shù)中,多通道濾光片在遙感探測、彩色顯示、圖像采集等方面有著廣泛的應(yīng)用。在這些應(yīng)用中常常需要小型化、集成化的多通道濾光片,而基于金屬掩膜法或拼接法的傳統(tǒng)工藝難以制作這類濾光片。因此如何制作高精度的多通道濾光片成為一個亟待解決的問題。本文圍繞著多通道濾光片中的關(guān)鍵技術(shù)展開,主要研究內(nèi)容包括：金屬-介質(zhì)光吸收膜的設(shè)計(jì)與制備。光吸收鍍膜在雜散光抑制、紅外光熱探測、太陽能光熱轉(zhuǎn)換等方向有著廣泛的應(yīng)用。本文基于金屬-介質(zhì)結(jié)構(gòu)設(shè)計(jì)了可見光波段的光吸收膜,采用單純形算法和模擬退火算法合成并優(yōu)化膜系結(jié)構(gòu)。此外還基于蒙特卡諾法進(jìn)一步分析了膜系中各層鍍制誤差對膜系性能的影響。實(shí)際制備得到的Cr/Si02結(jié)構(gòu)光吸收膜平均反射率為2.14%,可以滿足實(shí)際使用需求。厚膠光刻技術(shù)的工藝實(shí)驗(yàn)研究。復(fù)雜膜系和紅外膜系的膜層厚度常常達(dá)到幾十微米以上,如果采用光刻工藝制作,則要求相應(yīng)的光刻膠厚度在100μm以上。而現(xiàn)有的用于制作多通道濾光片的Lift-Off光刻技術(shù)制作的光刻膠圖案厚度在10μm以下,不能滿足上述要求。本文采用雙層涂膠法制備了厚度200μm左右的超厚光刻圖案,可以滿足復(fù)雜膜系或紅外膜系多通道濾光片的制作需求。光刻技術(shù)的參數(shù)優(yōu)化實(shí)驗(yàn)。本文采用NR21-20000P和NR9-8000光刻膠作為研究對象,詳細(xì)研究了各工藝參數(shù)對光刻膠圖形側(cè)壁形貌質(zhì)量的影響,測定了光刻膠的顯影速率、透過率等參數(shù)隨工藝條件的變化情況,最后通過正交實(shí)驗(yàn)確定了組合優(yōu)化實(shí)驗(yàn)參數(shù)。通過Lift-Off工藝制得的濾光片過渡區(qū)小于6μm。
[Abstract]:In modern optical information technology, multichannel filters are widely used in remote sensing, color display, image acquisition and so on. However, the traditional process based on metal mask or splicing method is difficult to make this kind of filter. Therefore, how to make high precision multichannel filter becomes a problem to be solved urgently. The main research contents include: the design and preparation of metal-dielectric optical absorption film, the suppression of stray light, infrared photothermal detection, Solar photothermal conversion has a wide range of applications. In this paper, a visible light absorption film is designed based on metal-dielectric structure. The structure of film system was synthesized and optimized by simplex algorithm and simulated annealing algorithm. In addition, the influence of coating error on the properties of film system was further analyzed based on Monte Carlo method. The light absorption of Cr/Si02 structure was obtained. The average reflectivity of the film is 2.14, which can meet the practical application requirements. Experimental study on the technology of thick rubber lithography. The thickness of the complex film system and the infrared film system is often more than tens of microns. If the lithography process is used, the thickness of the corresponding photoresist is required to be more than 100 渭 m. However, the thickness of the photoresist pattern made by the existing Lift-Off lithography technology for making multichannel filters is less than 10 渭 m. It can not meet the above requirements. In this paper, the ultra-thick photolithographic pattern with thickness of about 200 渭 m was prepared by double-layer coating method. It can meet the production requirement of multi-channel filter of complex film system or infrared film system. The parameter optimization experiment of lithography technology. In this paper, NR21-20000P and NR9-8000 photoresist are used as the research object. The influence of various technological parameters on the side wall morphology of photoresist was studied in detail. The development rate and transmittance of photoresist were measured. Finally, the optimal experimental parameters were determined by orthogonal experiment. The transition region of the filter prepared by Lift-Off process was less than 6 渭 m.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TH74;TN305.7

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